公开(公告)号：US20070141502A1

公开(公告)日：2007-06-21

申请号：US11446594

申请日：2006-06-05

申请人： Koji Aga ,  Takeshi Naito ,  Tetsuya Igarashi ,  Toshio Honjo

发明人： Koji Aga ,  Takeshi Naito ,  Tetsuya Igarashi ,  Toshio Honjo

IPC分类号： G03G9/113

CPC分类号： G03G9/107 ,  G03G9/1075 ,  G03G9/1136 ,  G03G9/1139

摘要： A ferrite carrier core material for electrophotography having a homogeneous composition, a certain surface property, a favorable fluidity, a high magnetization and a low resistance, and a ferrite carrier for electrophotography methods for producing them, and an electrophotographic developer using the ferrite carrier-core material, which exhibits a fast charge rising and a stable charge quantity with time, are provided. A ferrite carrier core material for electrophotography whose surface is divided by grooves or streaks into 2 to 50 regions per 10 μm and which has a manganese ferrite as a main component, and a method for producing the ferrite carrier core material for electrophotography using an Fe—Mn composite oxide as the raw material, and a method for producing a ferrite carrier for electrophotography are employed.

摘要翻译： 用于电子照相的铁素体载体芯材料具有均匀的组成，一定的表面性质，良好的流动性，高磁化强度和低电阻，以及用于制备它们的电子照相方法的铁氧体载体，以及使用铁氧体载体芯的电子照相显影剂 提供了表现出快速充电和随时间稳定的电荷量的材料。 一种用于电子照相的铁氧体载体芯材料，其表面被槽或条纹划分成每10个月2至50个区域，并且以铁氧体为主要成分的铁电体载体芯材，以及制备用于电子照相的铁氧体载体芯材的方法， Mn复合氧化物为原料，采用电子照相用铁氧体载体的制造方法。

公开(公告)号：US20110013948A1

公开(公告)日：2011-01-20

申请号：US12921408

申请日：2009-02-27

申请人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

发明人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

IPC分类号： G03G15/08 ,  G03G9/10 ,  G03G9/107 ,  G03G9/113

CPC分类号： G03G9/1075 ,  G03G9/1131 ,  G03G9/1132

摘要： Objects of the present invention are to provide a carrier core material for an electrophotographic developer having a true spherical shape and excellent strength, and a controllable true density and/or apparent density, and a method for manufacturing the carrier core material, a carrier and a method for manufacturing the carrier, and an electrophotographic developer using the carrier. In order to achieve the objects, there are employed a carrier core material for an electrophotographic developer, containing 3 to 100% by number of hollow particles having an iron content of 36 to 78% by weight, and a carrier for an electrophotographic developer, obtained by coating a resin on a surface of the carrier core material, and methods for manufacturing these, and an electrophotographic developer using the carrier.

摘要翻译： 本发明的目的是提供一种用于具有真实球形和优异强度以及可控的真实密度和/或表观密度的电子照相显影剂的载体芯材料，以及用于制造载体芯材料，载体和 制造载体的方法和使用载体的电子照相显影剂。 为了实现上述目的，采用了一种电子照相显影剂用载体芯材，其含有3〜100个数量的铁含量为36〜78重量％的中空粒子，得到电子照相显影剂用载体 通过在载体芯材的表面上涂布树脂及其制造方法和使用该载体的电子照相显影剂。

公开(公告)号：US20090197194A1

公开(公告)日：2009-08-06

申请号：US12362571

申请日：2009-01-30

申请人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

发明人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

IPC分类号： G03G9/083

CPC分类号： G03G9/107 ,  G03G9/08 ,  G03G9/10 ,  G03G9/1075 ,  G03G9/113 ,  G03G9/1131

摘要： There are adopted: a carrier core material for an electrophotographic developer, including Mg, Ti and Fe as main components, and containing Fe, Mg and Ti in contents of 52 to 66% by weight, 3 to 12% by weight and 0.2 to 12% by weight, respectively; an electrophotographic developer carrier prepared by coating with a resin the surface of the carrier core material; and an electrophotographic developer using the carrier.

摘要翻译： 采用以电子照相显影剂为载体芯材，以Mg，Ti，Fe为主要成分，含有52〜66重量％，3〜12重量％，0.2〜12重量份的Fe，Mg，Ti 重量％ 通过用树脂涂覆载体芯材的表面制备的电子照相显影剂载体; 和使用该载体的电子照相显影剂。

公开(公告)号：US07879522B2

公开(公告)日：2011-02-01

申请号：US12362571

申请日：2009-01-30

申请人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

发明人： Koji Aga ,  Issei Shinmura ,  Tetsuya Igarashi

IPC分类号： G03G9/083

CPC分类号： G03G9/107 ,  G03G9/08 ,  G03G9/10 ,  G03G9/1075 ,  G03G9/113 ,  G03G9/1131

摘要： There are adopted: a carrier core material for an electrophotographic developer, including Mg, Ti and Fe as main components, and containing Fe, Mg and Ti in contents of 52 to 66% by weight, 3 to 12% by weight and 0.2 to 12% by weight, respectively; an electrophotographic developer carrier prepared by coating with a resin the surface of the carrier core material; and an electrophotographic developer using the carrier.

摘要翻译： 采用以电子照相显影剂为载体芯材，以Mg，Ti，Fe为主要成分，含有52〜66重量％，3〜12重量％，0.2〜12重量份的Fe，Mg，Ti 重量％ 通过用树脂涂覆载体芯材的表面制备的电子照相显影剂载体; 和使用该载体的电子照相显影剂。

公开(公告)号：US06764548B2

公开(公告)日：2004-07-20

申请号：US10204278

申请日：2002-08-20

申请人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

发明人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.

摘要翻译： 本发明提供了一种用于制造硅半导体单晶的装置和方法，当生长硅半导体单晶时，可以使晶体生长轴方向上的沉淀氧量稳定和均化。 通过切克劳斯基法生产硅半导体单晶的装置包括：主生长炉，其具有保存硅熔体的坩埚，用于生长硅半导体单晶;以及上部生长炉，用于容纳在其中并冷却硅半导体单晶拉伸 与硅熔体相连，其中与主生长炉的顶部连通的上部生长炉设置有用于围绕拉制硅半导体单晶的上部绝缘构件。

公开(公告)号：US06498288B1

公开(公告)日：2002-12-24

申请号：US09582237

申请日：2000-07-24

申请人： Takao Abe ,  Ichiro Yonenaga ,  Tetsuya Igarashi

发明人： Takao Abe ,  Ichiro Yonenaga ,  Tetsuya Igarashi

IPC分类号： H01L3500

CPC分类号： C30B15/00 ,  C30B29/52

摘要： Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.

摘要翻译： 提供具有改进的性能指数和作为构成热电元件的材料的优良机械加工性的SiGe晶体，在使用过程中既不降低特性也不发生开裂。 形成晶体的晶粒尺寸为5×10 -5 mm 3以上。

公开(公告)号：US09557682B2

公开(公告)日：2017-01-31

申请号：US13435316

申请日：2012-03-30

申请人： Takao Sugiura ,  Tetsuya Igarashi

发明人： Takao Sugiura ,  Tetsuya Igarashi

IPC分类号： G03G9/00 ,  G03G15/08 ,  G03G9/10 ,  G03G9/107 ,  G03G9/113

CPC分类号： G03G15/0818 ,  G03G9/10 ,  G03G9/107 ,  G03G9/113

摘要： Object of the present invention is to provide a resin-coated carrier for an electrophotographic developer with reduced carrier weight, carrier beads carry over is prevented, and further, excellent in carrier strength and stable charging property in endurance printing. To achieve the object, the carrier having a coated resin layer on the surface of a porous ferrite core material and the pore volume and the peak pore size of the porous ferrite core material are 55 to 160 mm3/g and 0.2 to 0.7 μm, respectively, and an electrophotographic developer using the resin-coated carrier is adopted.

摘要翻译： 本发明的目的是提供一种用于电子照相显影剂的树脂涂布载体，其载体重量减小，防止载体珠粒携带，并且进一步优异的载体强度和耐久性印刷中的稳定带电性能。 为了达到上述目的，在多孔铁氧体磁芯材料的表面上具有涂布树脂层的载体和多孔铁氧体磁芯材料的孔体积和峰值孔径分别为55〜160mm 3 / g和0.2〜0.7μm 并且采用使用树脂涂布载体的电子照相显影剂。

公开(公告)号：US06544656B1

公开(公告)日：2003-04-08

申请号：US09674841

申请日：2000-11-07

申请人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

发明人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

IPC分类号： C30B2906

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T428/21

摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.

摘要翻译： 通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片， 晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。 如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量 间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。 此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

公开(公告)号：US06280522B1

公开(公告)日：2001-08-28

申请号：US09508695

申请日：2000-03-29

申请人： Hiroyuki Watanabe ,  Hiroyuki Miyazawa ,  Tatsuhiro Sato ,  Satoshi Soeta ,  Tetsuya Igarashi

发明人： Hiroyuki Watanabe ,  Hiroyuki Miyazawa ,  Tatsuhiro Sato ,  Satoshi Soeta ,  Tetsuya Igarashi

IPC分类号： C30B1322

CPC分类号： C03B19/095 ,  C03B2201/23 ,  C03B2201/24 ,  C30B15/10 ,  C30B35/002 ,  Y10S65/08

摘要： There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.

摘要翻译： 提供了一种用于拉制硅单晶的石英玻璃坩埚和用于坩埚的制造方法，其中在拉取硅单晶时坩埚的内表面结晶而不添加杂质，从而导致晶体缺陷的原因是 不掺入到硅单晶中，从而抑制其内表面的劣化以提高结晶化率，从而提高了石英玻璃坩埚的生产率以及硅单晶的质量，并且提高了石英玻璃坩埚 拉硅单晶包括由半透明石英玻璃层制成的坩埚基体（3）和形成在坩埚基体（3）的内壁表面上的合成石英玻璃层（4），其中包围由 石英玻璃坩埚的内表面上的棕色环在拉制硅单晶时均匀结晶。

公开(公告)号：US06815605B1

公开(公告)日：2004-11-09

申请号：US09743982

申请日：2001-01-18

申请人： Takao Abe ,  Teruhiko Hirasawa ,  Katsushi Tokunaga ,  Tetsuya Igarashi ,  Masafumi Yamaguchi

发明人： Takao Abe ,  Teruhiko Hirasawa ,  Katsushi Tokunaga ,  Tetsuya Igarashi ,  Masafumi Yamaguchi

IPC分类号： C03B1504

CPC分类号： C30B29/06 ,  C30B15/00

摘要： There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.