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    Production method for silicon wafer and silicon wafer
    1.
    发明授权
    Production method for silicon wafer and silicon wafer 有权
    硅晶片和硅晶片的生产方法

    公开(公告)号：US06544656B1

    公开(公告)日：2003-04-08

    申请号：US09674841

    申请日：2000-11-07

    申请人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

    发明人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

    IPC分类号： C30B2906

    CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T428/21

    摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.

    摘要翻译： 通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片， 晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。 如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量 间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。 此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

    Silicon wafer
    2.
    发明授权
    Silicon wafer 有权

    公开(公告)号：US06538285B2

    公开(公告)日：2003-03-25

    申请号：US09983205

    申请日：2001-10-23

    申请人： Norihiro Kobayashi ,  Shoji Akiyama ,  Takao Abe

    发明人： Norihiro Kobayashi ,  Shoji Akiyama ,  Takao Abe

    IPC分类号： H01L2701

    CPC分类号： H01L21/02008 ,  C30B29/06 ,  C30B33/00 ,  H01L21/322

    摘要： The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.

    Method for producing silicon wafer and silicon wafer
    3.
    发明授权
    Method for producing silicon wafer and silicon wafer 有权
    硅晶片和硅晶片的制造方法

    公开(公告)号：US06333279B1

    公开(公告)日：2001-12-25

    申请号：US09600819

    申请日：2000-07-24

    申请人： Norihiro Kobayashi ,  Shoji Akiyama ,  Takao Abe

    发明人： Norihiro Kobayashi ,  Shoji Akiyama ,  Takao Abe

    IPC分类号： H01L2100

    CPC分类号： H01L21/02008 ,  C30B29/06 ,  C30B33/00 ,  H01L21/322

    摘要： The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.

    摘要翻译： 本发明提供了一种制造硅晶片的方法，其特征在于，对晶片的至少一个表面进行多步抛光工艺，其中在氢和氩的混合气体气氛中通过使用快速 加热/快速冷却装置代替多步抛光工艺中的最终抛光，以及通过该方法制造的硅晶片。 由此，可以提供高生产率的硅晶片，其中在晶片表面上既不存在机械损伤也不刮伤，表面粗糙度显着提高，并且不存在滑移位错。

    Silicon germanium crystal
    5.
    发明授权
    Silicon germanium crystal 失效
    硅锗晶体

    公开(公告)号：US06498288B1

    公开(公告)日：2002-12-24

    申请号：US09582237

    申请日：2000-07-24

    申请人： Takao Abe ,  Ichiro Yonenaga ,  Tetsuya Igarashi

    发明人： Takao Abe ,  Ichiro Yonenaga ,  Tetsuya Igarashi

    IPC分类号： H01L3500

    CPC分类号： C30B15/00 ,  C30B29/52

    摘要： Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.

    摘要翻译： 提供具有改进的性能指数和作为构成热电元件的材料的优良机械加工性的SiGe晶体，在使用过程中既不降低特性也不发生开裂。 形成晶体的晶粒尺寸为5×10 -5 mm 3以上。

    Single-crystal manufacturing apparatus
    6.
    发明授权
    Single-crystal manufacturing apparatus 有权
    单晶制造装置

    公开(公告)号：US08821636B2

    公开(公告)日：2014-09-02

    申请号：US12936450

    申请日：2009-04-24

    申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

    发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

    IPC分类号： C30B15/02 ,  C30B15/14 ,  C30B29/06 ,  C30B15/00 ,  C30B35/00

    CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

    摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

    摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。

    Apparatus and method for producing single crystal
    8.
    发明授权
    Apparatus and method for producing single crystal 有权
    单晶制造装置及方法

    公开(公告)号：US08337616B2

    公开(公告)日：2012-12-25

    申请号：US12734423

    申请日：2008-12-01

    申请人： Takao Abe

    发明人： Takao Abe

    IPC分类号： C30B35/00 ,  C30B15/00

    CPC分类号： C30B29/06 ,  C30B15/16 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

    摘要翻译： 单晶体制造装置包括室，坩埚在室内，在坩埚周围设置的加热器，用于提升晶种的提升机构，以及用于晶种的引导通道和生长的单晶。 在单晶体制造装置中，包含坩埚的多晶体被加热器熔化，使晶种与熔融的多晶体接触并提升。 单晶制造装置包括具有弯曲底部的圆柱形石英管和圆顶状石英板。 弯曲的底部部分通过引导通道从腔室的上部面向坩埚。 石英板被设置成封闭石英管。 石英管具有用于从至少其底部反射热射线的反射结构，而石英板具有用于将热射线反射到坩埚的反射结构。

    SINGLE-CRYSTAL MANUFACTURING APPARATUS
    10.
    发明申请
    SINGLE-CRYSTAL MANUFACTURING APPARATUS 有权
    单晶制造设备

    公开(公告)号：US20110030612A1

    公开(公告)日：2011-02-10

    申请号：US12936450

    申请日：2009-04-24

    申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

    发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

    IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/14

    CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

    摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

    摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。