公开(公告)号：US20090267068A1

公开(公告)日：2009-10-29

申请号：US12429486

申请日：2009-04-24

申请人： Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI ,  Takeyoshi WATABE

发明人： Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI ,  Takeyoshi WATABE

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01J37/32091 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.

摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。 薄膜晶体管包括晶体区域，其包括微小晶粒和倒圆锥形或倒棱锥晶粒，其每个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长 沉积在不到达杂质半导体层的区域中。

公开(公告)号：US20100224879A1

公开(公告)日：2010-09-09

申请号：US12716002

申请日：2010-03-02

申请人： Hidekazu MIYAIRI ,  Takeyoshi WATABE ,  Takashi SHIMAZU

发明人： Hidekazu MIYAIRI ,  Takeyoshi WATABE ,  Takashi SHIMAZU

IPC分类号： H01L29/786

CPC分类号： H01L29/78669 ,  H01L27/1288 ,  H01L29/78678 ,  H01L29/78696 ,  H01L51/52

摘要： A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.

摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，与栅极绝缘层接触的半导体层和与半导体层的一部分接触并形成源极区域和漏极区域的杂质半导体层。 半导体层包括形成在栅极绝缘层上的微晶半导体层和含有与微晶半导体层接触的氮的微晶半导体区域。 可以以高生产率制造截止电流小且导通电流大的薄膜晶体管。