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    Resist composition and patterning process
    5.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06667145B1

    公开(公告)日：2003-12-23

    申请号：US09694369

    申请日：2000-10-24

    申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。