Process for production of 4-oxoquinoline compound
    1.
    发明授权
    Process for production of 4-oxoquinoline compound 有权
    4-氧代喹啉化合物的制备方法

    公开(公告)号:US08420821B2

    公开(公告)日:2013-04-16

    申请号:US12281921

    申请日:2007-03-06

    IPC分类号: C07D215/233

    摘要: The present invention provides a compound useful as a synthetic intermediate for an anti-HIV agent having an integrase inhibitory activity, a production method thereof, and a production method of an anti-HIV agent using the synthetic intermediate. Specifically, the present invention provides, for example, compounds represented by the formulas (6), (7-1), (7-2) and (8): wherein R is a fluorine atom or a methoxy group, R1 is a C1-C4 alkyl group, R2 is a hydroxyl-protecting group, and X2 is a halogen atom, a production method thereof, and a production method of an anti-HIV agent using the synthetic intermediate.

    摘要翻译: 本发明提供了可用作具有整合酶抑制活性的抗HIV剂的合成中间体的化合物,其制备方法和使用该合成中间体的抗HIV药物的制备方法。 具体地说,本发明提供例如由式(6),(7-1),(7-2)和(8)表示的化合物:其中R是氟原子或甲氧基,R1是C1 -C4烷基,R2为羟基保护基,X2为卤素原子,其制造方法以及使用该合成中间体的抗HIV剂的制造方法。

    PROCESS FOR PRODUCTION OF 4-OXOQUINOLINE COMPOUND
    3.
    发明申请
    PROCESS FOR PRODUCTION OF 4-OXOQUINOLINE COMPOUND 有权
    4-氧杂环戊烯化合物的生产方法

    公开(公告)号:US20090318702A1

    公开(公告)日:2009-12-24

    申请号:US12281921

    申请日:2007-03-06

    摘要: The present invention provides a compound useful as a synthetic intermediate for an anti-HIV agent having an integrase inhibitory activity, a production method thereof, and a production method of an anti-HIV agent using the synthetic intermediate. Specifically, the present invention provides, for example, compounds represented by the formulas (6), (7-1), (7-2) and (8): wherein R is a fluorine atom or a methoxy group, R1 is a C1-C4 alkyl group, R2 is a hydroxyl-protecting group, and X2 is a halogen atom, a production method thereof, and a production method of an anti-HIV agent using the synthetic intermediate.

    摘要翻译: 本发明提供了可用作具有整合酶抑制活性的抗HIV剂的合成中间体的化合物,其制备方法和使用该合成中间体的抗HIV药物的制备方法。 具体地说,本发明提供例如由式(6),(7-1),(7-2)和(8)表示的化合物:其中R是氟原子或甲氧基,R1是C1 -C4烷基,R2为羟基保护基,X2为卤素原子,其制造方法以及使用该合成中间体的抗HIV剂的制造方法。

    Stable crystal of 4-oxoquinoline compound
    7.
    发明授权
    Stable crystal of 4-oxoquinoline compound 有权
    稳定的4-氧代喹啉化合物

    公开(公告)号:US08981103B2

    公开(公告)日:2015-03-17

    申请号:US12538694

    申请日:2009-08-10

    IPC分类号: C07D215/00 C07D215/56

    CPC分类号: C07D215/56

    摘要: Provision of a stabilized crystal of 6-(3-chloro-2-fluorobenzyl)-1-[(S)-1-hydroxymethyl-2-methylpropyl]-7-methoxy-4-oxo-1,4-dihydroquinoline-3-carboxylic acid (compound A). A crystal of compound A, which shows a particular X-ray powder diffraction pattern of a characteristic diffraction peaks at diffraction angles 2θ(°) as measured by X-ray powder diffractometry.

    摘要翻译: 提供6-(3-氯-2-氟苄基)-1 - [(S)-1-羟甲基-2-甲基丙基] -7-甲氧基-4-氧代-1,4-二氢喹啉-3-酮的稳定结晶, 羧酸(化合物A)。 化合物A的晶体,其显示了通过X射线粉末衍射测量的衍射角2θ时的特征衍射峰的特定X射线粉末衍射图案(°)。

    Random number generating device
    9.
    发明授权
    Random number generating device 有权
    随机数生成装置

    公开(公告)号:US08521795B2

    公开(公告)日:2013-08-27

    申请号:US12452012

    申请日:2008-03-24

    IPC分类号: G06F7/58

    CPC分类号: G06F7/588

    摘要: A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.

    摘要翻译: 构造随机数生成装置,使其具有改善的随机数生成速率并且容易地构造紧凑电路。 该随机数生成装置包括具有由磁化自由层,中间层和磁化固定层构成的三层的磁致电阻元件,并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值 层,其中磁阻元件经受施加磁化电流,使得磁化自由层的反转概率为0和1之间的值,磁阻元件的电阻值通过该值提取为随机数。

    Non-volatile memory element and method of operation therefor
    10.
    发明授权
    Non-volatile memory element and method of operation therefor 有权
    非易失性存储元件及其操作方法

    公开(公告)号:US07936631B2

    公开(公告)日:2011-05-03

    申请号:US12318823

    申请日:2009-01-09

    IPC分类号: G11C13/04

    摘要: A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.

    摘要翻译: 在半导体p-i-n二极管上形成非常小的磁性隧道结。 由圆偏振光或椭圆偏振光产生的自旋极化电流被注入到磁性隧道结的自由层中,使得自由层中的磁化方向(两个相反的方向)基于信息而改变,由此信息 存储在存储元件中。