摘要:
A method of measuring magnetization direction of a MR device, includes a first step of obtaining both maximum electrical resistance values under positive and negative applied measurement magnetic fields onto the MR device biased by anti-ferromagnetic material, a second step of relatively rotating a basic axis of the MR device against a direction of the applied measurement magnetic field until both the maximum resistance values become comparatively the same, and a third step of obtaining a relative rotation angle between the basic axis of the MR device and the direction of the applied measurement magnetic field.
摘要:
A manufacturing method of a thin-film magnetic head with a MR multi-layered structure using exchange coupling magnetic bias, has a step of forming the MR multi-layered structure, and a step of providing the exchange coupling magnetic bias to the MR multi-layered structure by a temperature-annealing process. The temperature-annealing process includes a step of gradually decreasing the temperature of the multi-layered structure to a first predetermined temperature under application of magnetic field toward a predetermined direction.
摘要:
A MR multi-layered structure or a thin-film magnetic head with the MR multi-layered structure includes a non-magnetic electrically conductive material layer, first and second ferromagnetic material layer separated by the non-magnetic electrically conductive material layer, and an anti-ferromagnetic material layer formed adjacent to and in physical contact with one surface of the second ferromagnetic material layer, the one surface being in opposite side of the non-magnetic electrically conductive material layer. The second ferromagnetic material layer includes a first layer of a ferromagnetic material containing Co, and a second layer of a ferromagnetic material with a smaller magnetic anisotropy than that of Co.
摘要:
A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of times.
摘要:
A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of times.
摘要:
According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
摘要:
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
摘要:
A coil component includes: an insulating resin layer provided between a first planar spiral conductor formed on a back surface of a first substrate and a second planer spiral conductor formed on a back surface of a second substrate; an upper core covering a third second planer spiral conductor formed on a front surface of the first substrate on which the insulating resin layer is formed; and a lower core covering a fourth planer spiral conductor formed on a front surface of the second substrate on which the insulating resin layer is formed. One of the upper and lower cores is formed of a metal-magnetic-powder-containing resin. The coil component includes connecting portions disposed respectively at center and outside portions of each of the first and second substrates so as to physically connect the upper and lower cores.