摘要:
According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
摘要:
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
摘要:
The present invention relates to a magnetic head, a head assembly, and a magnetic recording/reproducing apparatus which are capable of effectively detecting thermal asperity. The magnetic head according to the present invention includes a heat-generating resistor, a recording coil, and a resistive element. The heat-generating resistor is adapted to generate heat when power is fed thereto so that the heat generation causes at least a part of the air bearing surface to thermally expand and protrude. The recording coil is adapted to generate a recording magnetic field, and the resistive element is disposed closer to the air bearing surface than the recording coil and connected in series or in parallel with the heater. Thus, the resistive element can share a common wiring with the heater for power feeding, which eliminates the waste of wiring and achieves miniaturization.
摘要:
The present invention relates to a magnetic head, a head assembly, and a magnetic recording/reproducing apparatus which are capable of effectively detecting thermal asperity. The magnetic head according to the present invention includes a heat-generating resistor, a recording coil, and a resistive element. The heat-generating resistor is adapted to generate heat when power is fed thereto so that the heat generation causes at least a part of the air bearing surface to thermally expand and protrude. The recording coil is adapted to generate a recording magnetic field, and the resistive element is disposed closer to the air bearing surface than the recording coil and connected in series or in parallel with the heater. Thus, the resistive element can share a common wiring with the heater for power feeding, which eliminates the waste of wiring and achieves miniaturization.
摘要:
Provided are a magnetic transducer having good thermal stability, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a capping layer, which are stacked in this order on the underlayer. The ferromagnetic layer is divided into a bottom layer and a top layer in the direction of stack. A ferromagnetic interlayer having magnetism and having higher electrical resistance than the electrical resistance of the ferromagnetic layer is formed between the bottom layer and the top layer. The ferromagnetic interlayer magnetically integrates the bottom layer with the top layer and limits a path for electrons moving through the stack, thereby improving the rate of resistance change. Furthermore, the ferromagnetic interlayer contains, as an additive, at least one element in a group consisting of Mn, Cr, Ni, Cu, Rh, Ir and Pt and thus prevents heat deterioration in the stack.
摘要:
Provided are a magnetic transducer and a thin film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, a method of manufacturing a magnetic transducer and a method of a manufacturing a thin film magnetic head. An MR element has a stack having a stacked structure comprising an underlayer, a crystal-growth inhibitor layer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a cap layer, which are stacked in sequence. The ferromagnetic layer has an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer, which are stacked in this order on the nonmagnetic layer. The crystal-growth inhibitor layer inhibits crystal growth of the layers formed on the crystal-growth inhibitor layer, thereby limiting an average in-surface particle diameter of the inner ferromagnetic layer to within the range of from 3 nm to 8 nm inclusive, so that an interface between the coupling layer and the inner ferromagnetic layer becomes flattened.
摘要:
Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.
摘要:
A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, and an antiferromagnetization promote layer formed on a surface of the antiferromagnetic layer remote from the other surface thereof abutting the ferromagnetic layer, wherein the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure the which requires a heat treatment for generating exchange coupling relative to the ferromagnetic layer, and the antiferromagnetic layer after the heat treatment has a state wherein (110) crystal surfaces are oriented on a film surface of the antiferromagnetic layer.
摘要:
In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of MxMn100−x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15≦x≦58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a magnetoresistance effect type head having such a magnetoresistance effect film can be obtained.
摘要翻译:在自旋阀型磁阻效应膜中,反铁磁层由MxMn100-x制成,其中M表示选自Ru,Rh,Re,Pt,Pd,Au,Ag,Fe,Ni,Ir和Cr中的至少一种, <= x <= 58(x:原子%),其上形成的保护层由选自Rh,Ru,Zr和Ti中的至少一种制成。 通过这种布置,可以获得热稳定性优异且MR比率劣化小的磁阻效应膜以及具有这种磁阻效应膜的磁阻效应型头。
摘要:
Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.