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1.发明申请公开(公告)号：US20220115254A1
公开(公告)日：2022-04-14
申请号：US17556307
申请日：2021-12-20
IPC分类号： H01L21/677 , H01L21/67
摘要： Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.
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公开(公告)号：US20210395887A1
公开(公告)日：2021-12-23
申请号：US17208306
申请日：2021-03-22
IPC分类号： C23C16/458 , H01L21/02 , C23C16/40 , C23C16/34
摘要： There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.
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公开(公告)号：US20190221468A1
公开(公告)日：2019-07-18
申请号：US16367398
申请日：2019-03-28
发明人： Naofumi OHASHI , Kazuyuki TOYODA , Shun MATSUI
IPC分类号： H01L21/687 , H01J37/32
CPC分类号： H01L21/68771 , H01J37/32082 , H01J37/32192 , H01J37/32422 , H01J37/32541 , H01J37/32568 , H01L21/68764
摘要： Described herein is a technique capable of adjusting a plasma distribution of a processing region. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a dividing structure defining a processing region in a space facing the substrate support; a gas supply unit supplying a processing gas into the processing region; and a plasma generating unit generating an active species by plasmatizing the processing gas supplied into the processing region by the gas supply unit, and to control an activity of the active species independently for each portion of the processing region when plasmatizing the processing gas, wherein the plasma generating unit includes: a high frequency power supply unit installed in each portion of the processing region; and an impedance adjusting unit installed to correspond to the high frequency power supply unit.
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4.发明公开公开(公告)号：US20230360942A1
公开(公告)日：2023-11-09
申请号：US18352557
申请日：2023-07-14
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67745 , H01L21/67023 , H01L21/67253 , H01L21/67754
摘要： Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).
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公开(公告)号：US20230085140A1
公开(公告)日：2023-03-16
申请号：US17942839
申请日：2022-09-12
IPC分类号： H01L21/67 , H01L21/687
摘要： A substrate processing apparatus includes: a process chamber performing film-forming processing to a substrate; a substrate support that is provided in the process chamber and includes a plurality of mounting surfaces on which the substrate is mounted; and a detector that is disposed outside or inside the process chamber and detects a state of a film-forming material adhering to at least one of the plurality of mounting surfaces in a non-contact manner.
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6.发明申请公开(公告)号：US20220244707A1
公开(公告)日：2022-08-04
申请号：US17725181
申请日：2022-04-20
IPC分类号： G05B19/416 , H01L21/677 , H01L21/67
摘要： A substrate processing apparatus includes a plurality of storage containers mounted on a load port, each storage container storing a plurality of substrates; a plurality of process chambers for accommodating the substrates; a transfer part for transferring the substrates; a memory for storing data tables, including first count data, for the process chambers; an operation part, when multiple substrates in the first storage container is transferred to the process chambers in a predetermined order and performs a predetermined process in the process chambers in a state in which no substrate is present in a first process chamber, counting first count data for the first process chamber; and a controller assigns flag data to a data table of a process chamber having largest first count data and when multiple substrates in the second storage container is transferred, control the transfer part based on the flag data from a different process chamber.
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7.发明申请公开(公告)号：US20210003990A1
公开(公告)日：2021-01-07
申请号：US16918626
申请日：2020-07-01
IPC分类号： G05B19/406 , H01L21/67
摘要： There is provided a technique that includes a plurality of substrate processing apparatuses each configured to process a substrate; a first controller installed in each substrate processing apparatus among the plurality of substrate processing apparatuses and configured to control the substrate processing apparatus; a relay configured to receive a plurality of types of data from the first controller; and a second controller configured to receive the data from the relay, wherein the relay is configured to change a transmission interval of the data to the second controller according to one of each type of the data and each first controller, or according to both of each type of the data and each first controller.
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8.发明申请公开(公告)号：US20200089196A1
公开(公告)日：2020-03-19
申请号：US16528184
申请日：2019-07-31
IPC分类号： G05B19/416 , H01L21/67 , H01L21/677
摘要： There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.
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公开(公告)号：US20220090263A1
公开(公告)日：2022-03-24
申请号：US17205831
申请日：2021-03-18
发明人： Takashi YAHATA , Shun MATSUI , Naofumi OHASHI , Tadashi TAKASAKI
IPC分类号： C23C16/52 , C23C16/44 , C23C16/458 , C23C16/46
摘要： Described herein is a technique capable of exhausting the inner atmosphere of the gas supply pipe of the process vessel while preventing the exhaust gas from accumulating therein. According to one aspect thereof, there is provided a substrate processing system including: process vessels; a gas supply pipe connected to each process vessel; a first exhauster configured to exhaust inner atmospheres of the process vessels; a second exhauster provided separately from the first exhauster and connected to the gas supply pipe through a first switching valve; and a controller enabling to: (a) process the substrate by supplying the process gas through the gas supply pipe to a process vessel among the plurality of the process vessels; and (b) exhaust the process gas from the gas supply pipe to the second exhauster without suppling the process gas from the gas supply pipe to the process vessel.
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公开(公告)号：US20210028042A1
公开(公告)日：2021-01-28
申请号：US16802322
申请日：2020-02-26
IPC分类号： H01L21/677 , H01L21/67
摘要： Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.
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