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公开(公告)号：US20140319566A1
公开(公告)日：2014-10-30
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译： 发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个 背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。
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公开(公告)号：US09577165B2
公开(公告)日：2017-02-21
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译： 发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个 背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。
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公开(公告)号：US08872209B2
公开(公告)日：2014-10-28
申请号：US13581417
申请日：2011-02-15
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。 在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。 降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。 功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。
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公开(公告)号：US20130221390A1
公开(公告)日：2013-08-29
申请号：US13820306
申请日：2011-08-24
申请人： Karl Engl , Markus Maute , Stefanie Rammelsberger
发明人： Karl Engl , Markus Maute , Stefanie Rammelsberger
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode chip having a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light-emitting diode chip has, on a front side, a radiation exit surface, at least regions of the light-emitting diode chip have, on a rear side opposite the radiation exit surface, a mirror layer containing silver, a protective layer containing Pt is disposed on the mirror layer, and the protective layer has a structure that covers the mirror layer only in sub-regions.
摘要翻译： 一种具有半导体层序列的发光二极管芯片，具有产生电磁辐射的有源层，其中所述发光二极管芯片在正面具有辐射出射表面，至少所述发光二极管芯片的区域具有 在与辐射出射面相反的后侧，在镜面层上配置有含有银的镜面层，含有Pt的保护层，保护层仅具有仅在子区域覆盖镜面层的结构。
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公开(公告)号：US20130146910A1
公开(公告)日：2013-06-13
申请号：US13581417
申请日：2011-02-15
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。 在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。 降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。 功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。
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6.发明授权公开(公告)号：US09343637B2
公开(公告)日：2016-05-17
申请号：US13981879
申请日：2012-02-07
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译： 光电子半导体芯片具有半导体本体和设置半导体本体的基板。 半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。 第一半导体层设置在面向衬底的有源区的一侧。 第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。 封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。
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7.发明申请公开(公告)号：US20140021507A1
公开(公告)日：2014-01-23
申请号：US13981879
申请日：2012-02-07
IPC分类号： H01L33/52
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译： 光电子半导体芯片具有半导体本体和设置半导体本体的基板。 半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。 第一半导体层设置在面向衬底的有源区的一侧。 第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。 封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。
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8.发明申请公开(公告)号：US20120213241A1
公开(公告)日：2012-08-23
申请号：US13388257
申请日：2010-06-28
CPC分类号： H01S5/4031 , H01S5/2036 , H01S5/2086 , H01S5/22 , H01S5/2214 , H01S5/4081
摘要： A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 μm.
摘要翻译： 一种宽条纹激光器（1），包括外延层堆叠（2），其包含有源辐射产生层（21）并具有顶侧（22）和下侧（23）。 层叠体（2）具有沟槽（3），其中层叠体（2）的至少一层至少部分地被去除并且从顶侧（22）沿着下侧（23）的方向引出。 层叠体（2）在每个与沟槽（3）相邻的顶侧脊（4）上具有层叠体（2），其在顶侧具有条纹的方式。 脊（4）和沟槽（3）分别具有至多20μm的宽度（d1，d2）。
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9.发明授权Broad area laser having an epitaxial stack of layers and method for the production thereof 有权具有层的外延层的宽区域激光器及其制造方法公开(公告)号：US08619833B2
公开(公告)日：2013-12-31
申请号：US13388257
申请日：2010-06-28
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/2036 , H01S5/2086 , H01S5/22 , H01S5/2214 , H01S5/4081
摘要： A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 μm.
摘要翻译： 一种宽条纹激光器（1），包括外延层堆叠（2），其包含有源辐射产生层（21）并具有顶侧（22）和下侧（23）。 层叠体（2）具有沟槽（3），其中层叠体（2）的至少一层至少部分地被去除并且从顶侧（22）沿着下侧（23）的方向引出。 层叠体（2）在每个与沟槽（3）相邻的顶侧脊（4）上具有层叠体（2），其在顶侧具有条纹的方式。 脊（4）和沟槽（3）分别具有至多20μm的宽度（d1，d2）。
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