-
公开(公告)号：US5001522A
公开(公告)日：1991-03-19
申请号：US274074
申请日：1988-11-21
摘要： An optical semiconductor device is disclosed that comprises a quantum-well structure as an active region and exhibits a nonlinear optical effect with regard to light of energy near the band gap between the allowed band edges in the active region. The quantum-well structure of this device is composed of alternate layers consisting of at least one first semiconductor layer with a thickness smaller than the de Broglie wavelength of carriers and at least two second semiconductor layers with a band gap greater than that of the first semiconductor layer, the alternate layers being formed along a crystal orientation in the zinc-blende structure. The second semiconductor layers mentioned above are of an indirect transition type.
-
公开(公告)号：US4894836A
公开(公告)日：1990-01-16
申请号：US159797
申请日：1988-02-24
IPC分类号： G02F1/015 , H01L29/04 , H01L29/15 , H01L29/205 , H01L33/06 , H01L33/16 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01L29/045 , H01L29/155 , H01L29/205 , H01S5/343 , H01S5/3202 , H01S5/3211 , H01S5/34306
摘要： A semiconductor device using the quantum effect of one dimension that arises in the direction vertical to the plane of a substrate on which the device structure is disposed, wherein the plane of the substrate is substantially the (111) plane.
-
3.发明授权Semiconductor laser device having optical guilding layers of unequal resistance 失效半导体激光器件具有不均等阻抗的光学层
公开(公告)号：US4845724A
公开(公告)日：1989-07-04
申请号：US136671
申请日：1987-12-22
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/22 , H01S5/2237 , H01S5/32316
摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
-
公开(公告)号：US4887274A
公开(公告)日：1989-12-12
申请号：US132520
申请日：1987-12-14
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A Semiconductor laser device comprising a quantum well region with a superlattice structure that functions as an active region, wherein the superlattice quantum well region is composed of alternate layers consisting of a plurality of first Al.sub.x Ga.sub.1-x As thin films and a plurality of second Al.sub.y Ga.sub.1-y As thin films (0
摘要翻译： 一种半导体激光器件，包括具有作为有源区的超晶格结构的量子阱区，其中所述超晶格量子阱区由由多个第一Al x Ga 1-x As薄膜和多个第二Al y Ga 1-y As组成的交替层组成 薄膜（0
-
公开(公告)号：US4907239A
公开(公告)日：1990-03-06
申请号：US348807
申请日：1989-05-08
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
-
公开(公告)号：US4905246A
公开(公告)日：1990-02-27
申请号：US291124
申请日：1988-12-28
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3407 , H01S5/3432
摘要： A semiconductor laser device containing a laser oscillation-operating area which comprises a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.1) quantum well active layer, Ga.sub.1-y Al.sub.y As optical guiding layers interposing the quantum well active layer therebetween, and Ga.sub.1-z Al.sub.z As cladding layers superposed on the optical guiding layers, respectively, wherein the AlAs mole fraction y at the area of each of the optical guiding layers positioned in the vicinity of the interface of the optical guiding layers and the quantum well active layer meets the relationships y-z.gtoreq.0.3 and z-y.ltoreq.0.25.
-
公开(公告)号：US4852111A
公开(公告)日：1989-07-25
申请号：US132300
申请日：1987-12-15
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
-
公开(公告)号：US5022036A
公开(公告)日：1991-06-04
申请号：US456673
申请日：1989-12-27
申请人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
发明人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/22 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.
-
公开(公告)号：US4901326A
公开(公告)日：1990-02-13
申请号：US254080
申请日：1988-10-06
CPC分类号： H01S5/32 , H01S5/2231 , H01S5/227 , H01S5/22 , H01S5/2275 , H01S5/3202
摘要： A semiconductor laser device of this invention comprises a plurality of semiconductor epitaxial layers grown on a semiconductor substrate, wherein the growth plane of said substrate is substantially the (111) plane.
-
公开(公告)号：US4862470A
公开(公告)日：1989-08-29
申请号：US186818
申请日：1988-04-27
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/2004 , H01S5/3409 , H01S5/3432
摘要： A semiconductor laser device comprising an active layer, optical guiding layers sandwiching the active layer therebetween, and a cladding layer disposed on each of the optical guiding layers, wherein the refractive index of each of the optical guiding layers gradually varies in the direction of the thickness of the optical guiding layer, and the thickness of each of the cladding layers is 0.5 um or less.
-
-
-
-
-
-
-
-
-
搜索结果
83 条记录 (耗时 0.024 秒)
