摘要:
A chemical mechanical polishing pad includes a polishing layer, a recess being formed in a polishing surface of the polishing layer, the polishing layer including a surface layer that forms at least an inner side of the recess, and a ratio (D1/D2) of an average opening ratio D1(%) to an average opening ratio D2(%) being 0.01 to 0.5, the average opening ratio D1 being an average opening ratio of the inner side of the recess when the polishing layer has been immersed in water at 23° C. for 1 hour, and the average opening ratio D2 being an average opening ratio of a cross section of the polishing layer that does not intersect the surface layer when the cross section has been immersed in water at 23° C. for 1 hour.
摘要:
A chemical mechanical polishing pad includes a polishing layer, a recess being formed in a polishing surface of the polishing layer, the polishing layer including a surface layer that forms at least an inner side of the recess, and a ratio (D1/D2) of an average opening ratio D1(%) to an average opening ratio D2(%) being 0.01 to 0.5, the average opening ratio D1 being an average opening ratio of the inner side of the recess when the polishing layer has been immersed in water at 23° C. for 1 hour, and the average opening ratio D2 being an average opening ratio of a cross section of the polishing layer that does not intersect the surface layer when the cross section has been immersed in water at 23° C. for 1 hour.
摘要:
There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.
摘要:
Provided is a composition for forming a polishing layer of a chemical mechanical polishing pad having polishing characteristics such as a high polishing rate, an excellent planarity of the polished object and less scratches of the polished object.The above composition for forming a polishing layer of a chemical mechanical polishing pad comprises (A) a polyurethane having a carbon-carbon double bond on a side chain and (B) a cross-linking agent. The polyurethane (A) is preferably a thermoplastic polyurethane (A′) obtained by mixing at least the following components (a11) to (a13) and component (a2) in a proportion satisfying the following conditions (1) and (2) and reacting them: (a11) an oligomer which has one or more hydroxyl groups and one or more carbon-carbon double bonds and which has a number average molecular weight of 500 to 2500, (a12) an oligomer which has two or more hydroxyl groups and either one or both of an ether bond and an ester bond and which has a number average molecular weight of 500 to 2500 and is different from the component (a11), (a13) a monomer having two hydroxyl groups and (a2) a monomer having two isocyanate groups; and (1) a value of M-1/M-OH is 0.85 to 1.10, and (2) a value of M-2/M-OH is 0.45 to 0.80, wherein M-1 is the number of isocyanate groups contained in the component (a2), M-2 is the number of hydroxyl groups contained in the component (a13) and M-OH is the total number of hydroxyl groups contained in the components (a11), (a12) and (a13).
摘要:
A composition for forming a chemical mechanical polishing pad having polishing characteristics such as a high polishing rate, an excellent planarity of the polished object, and less scratches of the polished object. The composition includes (A) a polyurethane having a carbon-carbon double bond on a side chain and (B) a cross-linking agent. The polyurethane (A) is preferably a thermoplastic polyurethane (A′) obtained by mixing at least components (a11) to (a13) and component (a2) in a proportion satisfying the following conditions (1) and (2) and reacting them.
摘要:
An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.
摘要:
A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a 10-point height (Rz) of 40 to 150 μm, a core roughness depth (Rk) of 12 to 50 μm and a reduced peak height (Rpk) of 7 to 40 μm, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.
摘要:
A method and an apparatus for determining an amount of fertilizer to be applied to grain crops are disclosed. A fertilizer application related formula for obtaining the necessary amount of fertilizer to be applied is established by analyzing growth information including leaf blade information, fertilizer application information and quality information, all the above information being obtained in advance from a number of grains or grain crops. The formula thus established is stored in the memory. The necessary amount of fertilizer to be applied for each specific period for grain crops which are presently under growth is calculated by applying to the above formula, growth information of the grain crops presently under growth and target quality information. The growth information includes leaf blade information in relation to a specific period. The results of the calculation are displayed or printed out. A method and an apparatus for estimating a quality or yield of grains prior to the harvesting is also disclosed. In this case, a quality or yield related formula is established in advance and stored in the memory.
摘要:
A lock stitch sewing machine with an automatic thread tension adjusting device is disclosed, wherein the sewing machine has a plurality of thread tension adjusting mechanisms 7, each of which including a pair of thread tension disks 12, 13, one of which is normally pressed by a spring toward the other. A sensor 4 is responsive to the operation of a thread tension releasing lever 20 made by a user with a slight touch applied thereto to give a signal. A CPU1 is responsive to the signal to compare the value of the existing thread tension of the thread tension adjusting mechanisms 7 with a predetermined one. If the value of the existing thread tension is higher than the predetermined one, the CPU1 is operated reduce the value of the existing thread tension to a predetermined one. Thus the tension releasing operation ability is increased.
摘要:
A method for measuring ash content of food stuff is carried out by 1) preparing, with respect to food stuff samples whose ash content values are known, a calibration curve by a non-linear analysis of absorbance values and the known ash content of each sample, the absorbance values being obtained by irradiating light having particular wavelengths containing at least an ultraviolet ray band wavelength, the particular wavelength being specific to organic ingredients well coupled to inorganic ingredients which result in the ash content, and 2) deriving, with respect to a sample whose ash content value is unknown, an ash content value of the sample from absorbance values obtained by irradiating, on the sample, light having the particular wavelengths containing at least the ultraviolet ray band wavelength and from the calibration curve prepared in advance by the non-linear analysis. An apparatus for carrying out the method includes a light source section, a photo detecting section, a storing section for storing the calibration curve, and a calculation section for calculating, with respect to a sample whose ash content value is unknown, the ash content value based on the absorbance values and the calibration curve stored in the storing section. It is possible to speed up the measuring operation and to improve the measuring precision.