Process for forming silica film
    1.
    发明授权
    Process for forming silica film 失效
    二氧化硅膜形成工艺

    公开(公告)号:US06099911A

    公开(公告)日:2000-08-08

    申请号:US944197

    申请日:1997-10-03

    CPC分类号: C23C18/00 C04B41/5035

    摘要: A process for forming a silica film on a substrate, comprising the steps of preparing a liquid composition comprising silicic acid, water, an alkali and an organic solvent, said liquid composition having a volume ratio of water to the organic solvent in a range of 0.2 to 10.0 and a concentration of silicon element in a range of 0.0001 to 5.0 mol/l; contacting a surface of a substrate with the liquid composition; and maintaining the contact between the surface of the substrate with the liquid composition to selectively deposit silica on the surface of the substrate until a silica film is formed on the surface of the substrate.

    摘要翻译: 一种在基板上形成二氧化硅膜的方法,包括以下步骤:制备包含硅酸,水,碱和有机溶剂的液体组合物,所述液体组合物的水与有机溶剂的体积比在0.2的范围内 至10.0,并且硅元素的浓度在0.0001至5.0mol / l的范围内; 使基材的表面与液体组合物接触; 并且保持基板的表面与液体组合物之间的接触,以在基板的表面上选择性地沉积二氧化硅,直到在基板的表面上形成二氧化硅膜。

    Semiconductor device and manufacturing method of semiconductor device
    3.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号:US09035321B2

    公开(公告)日:2015-05-19

    申请号:US13059759

    申请日:2009-08-20

    摘要: There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.

    摘要翻译: 提供了一种包括欧姆接合层的半导体器件,其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异,因此可以与肖特基结层具有足够高的粘附性。 这种半导体器件包括n型SiC半导体衬底(1),与SiC半导体衬底(1)的一侧的主表面(1b)欧姆接触的阴极电极(5),第一半导体区域 6a),其形成在SiC半导体衬底(1)的另一侧的主表面(1a)中的由p型SiC制成的第二半导体区域(6b),其形成在主表面中的n型SiC (1a),与第一半导体区域(1a)欧姆接触的欧姆结层(7)和与第二半导体区域(6b)进行肖特基接触的肖特基结层(8) ,其中所述欧姆接合层(7)的表面的均方根粗糙度为20nm以下。

    Dictionary creation using image similarity
    4.
    发明授权
    Dictionary creation using image similarity 有权
    使用图像相似性的词典创作

    公开(公告)号:US08929595B2

    公开(公告)日:2015-01-06

    申请号:US13459021

    申请日:2012-04-27

    IPC分类号: G06K9/00 G06K9/62

    摘要: An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.

    摘要翻译: 一种图像识别装置,包括:获取单元,被配置为获得一个或多个图像; 检测单元,被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元,被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元,被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元,被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元,被配置为如果存在相似度不小于阈值的一对特征量,则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。

    IMAGE RECOGNITION APPARATUS, METHOD OF CONTROLLING IMAGE RECOGNITION APPARATUS, AND STORAGE MEDIUM
    5.
    发明申请
    IMAGE RECOGNITION APPARATUS, METHOD OF CONTROLLING IMAGE RECOGNITION APPARATUS, AND STORAGE MEDIUM 有权
    图像识别装置,控制图像识别装置的方法和存储介质

    公开(公告)号:US20120288148A1

    公开(公告)日:2012-11-15

    申请号:US13459021

    申请日:2012-04-27

    IPC分类号: G06K9/62

    摘要: An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.

    摘要翻译: 一种图像识别装置,包括:获取单元,被配置为获得一个或多个图像; 检测单元,被配置为从一个或多个图像中的每一个检测目标对象图像; 切割单元,被配置为从所述目标对象图像切出一个或多个局部区域; 特征量计算单元,被配置为从一个或多个局部区域中的每一个计算特征量以识别目标对象; 相似度计算单元,被配置为针对一个或多个局部区域中的每一个计算特征量之间的相似度; 以及注册单元,被配置为如果存在相似度不小于阈值的一对特征量,则为一个或多个区域中的每一个注册所述特征量中的一个作为所述目标对象的字典数据。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
    6.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    硅碳化硅半导体器件及其生产碳化硅半导体器件的方法

    公开(公告)号:US20110266558A1

    公开(公告)日:2011-11-03

    申请号:US13143218

    申请日:2009-11-30

    申请人: Kotaro Yano

    发明人: Kotaro Yano

    IPC分类号: H01L29/161 H01L21/28

    摘要: There is provided a silicon carbide semiconductor device equipped with an ohmic electrode that exhibits both low contact resistance and favorable surface conditions, the silicon carbide semiconductor device including a p-type silicon carbide single crystal, and an ohmic electrode for the p-type silicon carbide single crystal, wherein the ohmic electrode includes an alloy layer containing at least titanium, aluminum and silicon, and ratios of titanium, aluminum, and silicon in the alloy layer are Al: 40 to 70% by mass, Ti: 20 to 50% by mass, and Si: 1 to 15% by mass.

    摘要翻译: 提供一种装备有表现出低接触电阻和良好的表面条件的欧姆电极的碳化硅半导体器件,包括p型碳化硅单晶的碳化硅半导体器件和用于p型碳化硅的欧姆电极 单晶,其中所述欧姆电极包括至少含有钛,铝和硅的合金层,并且所述合金层中的钛,铝和硅的比率为Al:40〜70质量%,Ti:20〜50质量% 质量和Si:1〜15质量%。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号:US20110147767A1

    公开(公告)日:2011-06-23

    申请号:US13059759

    申请日:2009-08-20

    IPC分类号: H01L29/24 H01L21/28

    摘要: There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.

    摘要翻译: 提供了一种包括欧姆接合层的半导体器件,其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异,因此可以与肖特基结层具有足够高的粘附性。 这种半导体器件包括n型SiC半导体衬底(1),与SiC半导体衬底(1)的一侧的主表面(1b)欧姆接触的阴极电极(5),第一半导体区域 6a),其形成在SiC半导体衬底(1)的另一侧的主表面(1a)中的由p型SiC制成的第二半导体区域(6b),其形成在主表面中的n型SiC (1a),与第一半导体区域(1a)欧姆接触的欧姆结层(7)和与第二半导体区域(6b)进行肖特基接触的肖特基结层(8) ,其中所述欧姆接合层(7)的表面的均方根粗糙度为20nm以下。

    IMAGE PROCESSING APPARATUS AND METHOD
    8.
    发明申请
    IMAGE PROCESSING APPARATUS AND METHOD 有权
    图像处理装置和方法

    公开(公告)号:US20100085420A1

    公开(公告)日:2010-04-08

    申请号:US12574010

    申请日:2009-10-06

    IPC分类号: G06K9/34 H04N7/14 G06K9/46

    CPC分类号: H04N7/15 G06K9/38

    摘要: An image processing apparatus obtains a difference between a partial region of an input image and a partial region of a background image, stored in a storage device, corresponding to the partial region of the input image, determines whether each partial region of the input image is a moving body region or a background region based on the difference, and combines the partial region of the input image determined as the background region and the partial region of the background image corresponding to the partial region of the input image to update the background image.

    摘要翻译: 图像处理装置获取与输入图像的部分区域对应的存储在存储装置中的输入图像的部分区域和背景图像的局部区域之间的差,确定输入图像的每个部分区域是否为 基于差异的移动体区域或背景区域,并且将确定为背景区域的输入图像的部分区域和与输入图像的部分区域相对应的背景图像的部分区域组合以更新背景图像。

    METHOD FOR DETECTING PARTICULAR OBJECT FROM IMAGE AND APPARATUS THEREOF
    9.
    发明申请
    METHOD FOR DETECTING PARTICULAR OBJECT FROM IMAGE AND APPARATUS THEREOF 审中-公开
    用于从图像及其装置检测特定对象的方法

    公开(公告)号:US20100014758A1

    公开(公告)日:2010-01-21

    申请号:US12502921

    申请日:2009-07-14

    IPC分类号: G06K9/46

    摘要: When discriminating a plurality of types of objects, a plurality of local feature quantities are extracted from local regions in an image, and positions of the local regions, and attributes according to image characteristics of the local feature quantities are stored in correspondence with each other. Then, object likelihoods with respect to a plurality of objects are determined from attributes of feature quantities in a region-of-interest, an object whose object likelihood is not less than a threshold value is determined as an object candidate, and whether an object candidate is a predetermined object is determined.

    摘要翻译: 当识别多种类型的对象时,从图像中的局部区域中提取多个局部特征量,并且根据局部特征量的图像特征对应地存储局部区域和属性的位置。 然后,根据感兴趣区域中的特征量的属性来确定对多个对象的对象似然性,将对象可能性不小于阈值的对象确定为对象候选,以及对象候选 是一个预定的对象被确定。

    Image processing apparatus and method
    10.
    发明授权
    Image processing apparatus and method 有权
    图像处理装置及方法

    公开(公告)号:US07650045B2

    公开(公告)日:2010-01-19

    申请号:US12273687

    申请日:2008-11-19

    申请人: Kotaro Yano

    发明人: Kotaro Yano

    IPC分类号: G06K9/40

    CPC分类号: G06T5/008 G06T2207/30201

    摘要: An image processing apparatus comprises an extractor for extracting a brightness component from image data; a scale converter for obtaining a distribution of the brightness component on relatively large scale; a brightness component improver for improving the distribution of the brightness component of the image data by using the brightness component and an output of the converter; and an image reproducer for reproducing the image data by using an output of the improver as a distribution of a brightness component of a new image, wherein the apparatus further comprises a face detector for detecting a face area from the image data, and the improver adjusts a degree of improvement by using a distribution of a brightness component of the face area being an output of the detector. Thus, it is possible to automatically adjust the degree of improvement of the luminance distribution according to the image data to be processed.

    摘要翻译: 一种图像处理装置,包括:提取器,用于从图像数据中提取亮度分量; 用于以较大比例获得亮度分量的分布的比例转换器; 亮度分量改进器,用于通过使用亮度分量和转换器的输出来改善图像数据的亮度分量的分布; 以及图像再现器,用于通过使用改进器的输出作为新图像的亮度分量的分布来再现图像数据,其中该装置还包括用于从图像数据检测面部区域的面部检测器,并且改进器调整 通过使用作为检测器的输出的面部区域的亮度分量的分布来改善程度。 因此,可以根据要处理的图像数据自动调整亮度分布的改善程度。