摘要:
A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.
摘要:
To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要:
An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要:
An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要:
To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要:
The X-ray fluorescence analyzer (100) includes: an enclosure (10); a door (20) for putting the sample into and out of the enclosure; a height measurement mechanism (7) capable of measuring a height at the irradiation point; a moving mechanism control unit (9) for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit (7) for irradiating the irradiation point with a visible light laser beam; a laser start control unit (9) for irradiating the visible light laser beam by the laser unit (7) when the door is open state; and a height measurement mechanism start control unit (9) for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.
摘要:
A vacuumed enclosure has a window formed of an X-ray transmissive material. The vacuumed enclosure encloses an electron beam source for generating an electron beam and a target which, irradiated by the electron beam, generates a primary X-ray. The target is smaller in the outer dimension than the window and located on the center of the window such that it irradiates, through the window, the primary X-ray onto a sample located outside. The vacuumed enclosure further encloses an X-ray detector located such that it can detect a fluorescent X-ray and a scattered X-ray coming from the sample through the window. The X-ray detector generates a signal representative of energy information of the fluorescent X-ray and the scattered X-ray. The vacuumed enclosure further encloses a thermally and electrically conductive metal extending through the target across the widow.
摘要:
In a sample height regulating method, an area including the observation point on the sample is scan-irradiated with a first charged particle beam to obtain a first secondary electron image including the observation point. An area including the observation point on the sample is then scan-irradiated with a second charged particle beam to obtain a second secondary electron image including the observation point. Thereafter, based on magnifications of the first secondary electron image and the second secondary electron image and a distance between the observation point in the first secondary electron image and the observation point in the second secondary electron image, a height of the sample required for focusing the first charged particle beam and the second charged particle beam on the observation point is calculated. A sample stage supporting the sample is then displaced so as to position the sample at the calculated sample height.
摘要:
A sample sealing vessel 8 includes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray source 1 is arranged at a wall face 11 to irradiate primary X-ray, a face 12 different from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector 10, and the primary X-ray from the X-ray source 1 is arranged to be able to irradiate the wall face 12 of the sample sealing vessel to which the X-ray detector 10 is opposed.
摘要:
By indicating a desired position in any one image plane of a 1st image plane and a 2nd image plane and specifying a corresponding position in the other image plane by using a conversion function for mutually converting an coordinate system of the 1st image plane and that of the 2nd image plane, it is possible to specify a position, in the other image plane, corresponding to the desired position indicated in the any one image plane.