公开(公告)号：US4981771A

公开(公告)日：1991-01-01

申请号：US309026

申请日：1989-02-07

申请人： Kozo Mochiji ,  Yasunari Soda ,  Takeshi Kimura

发明人： Kozo Mochiji ,  Yasunari Soda ,  Takeshi Kimura

IPC分类号： G03F1/22 ,  G03F7/20

CPC分类号： G03F1/22 ,  G03F7/2061 ,  Y10S430/168

摘要： When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.

摘要翻译： 当通过使用在衬底上形成的重金属层上的辐射进行光刻来制造图案时，通过用放射线照射而从重金属层以分散的形式产生二次电子以暴露抗蚀剂。 结果，降低了在抗蚀剂上形成的图案的精度。 为了防止这种情况，可以用能够吸收二次电子的膜形成待转移层，待加工基板，掩模等，使得从重金属层产生的二次电子可能不到达抗蚀剂膜 。 虽然根据现有技术不能制造2微米或更小的厚度的图案，但是可以通过本发明的方法制造薄至1.5微米的图案。

公开(公告)号：US4954424A

公开(公告)日：1990-09-04

申请号：US295209

申请日：1988-12-20

申请人： Kozo Mochiji ,  Hiroaki Oizumi ,  Yasunari Soda ,  Taro Ogawa ,  Takeshi Kimura

发明人： Kozo Mochiji ,  Hiroaki Oizumi ,  Yasunari Soda ,  Taro Ogawa ,  Takeshi Kimura

IPC分类号： G03C5/00 ,  G03F7/00 ,  G03F7/027 ,  G03F7/038 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G03F7/027 ,  G03F7/38 ,  Y10S430/168

摘要： The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.

摘要翻译： PCT No.PCT / JP88 / 00691 Sec。 371日期：1988年12月20日 102（e）日期1988年12月20日PCT提交1988年7月11日PCT公布。 第WO89 / 01187号公报 日本1989年2月9日。本发明提供了一种通过辐射诱导的接枝共聚的图案制造方法，其不仅能够以非常小的曝光量制造非常精细的抗蚀剂图案，而且还利用电流干燥 通过利用能够引起辐射诱导的接枝共聚和耐干蚀刻性优异的抗蚀剂，即具有苯基，聚苯乙烯或其衍生物的聚（甲基丙烯酸酯）的抗蚀剂进行图案制造的蚀刻工艺。

公开(公告)号：US4701940A

公开(公告)日：1987-10-20

申请号：US790116

申请日：1985-10-22

申请人： Yasunari Soda ,  Kozo Mochiji ,  Takeshi Kimura ,  Hidehito Obayashyi

发明人： Yasunari Soda ,  Kozo Mochiji ,  Takeshi Kimura ,  Hidehito Obayashyi

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G21K5/00

CPC分类号： G03F9/7065 ,  G03F7/2039 ,  G03F7/70566

摘要： A process of X-Y lithography including providing a linearly polarized X-ray, and irradiating a resist on a substrate through a mask with the linearly polarized X-ray to form a pattern shape which is utilized for production of, for example, a semiconductor device or magnetic bubble memory device.

摘要翻译： 一种XY平版印刷方法，包括提供线性偏振X射线，并通过具有线性偏振X射线的掩模在基片上照射抗蚀剂，以形成用于生产例如半导体器件或 磁性气泡记忆装置。

公开(公告)号：US5017458A

公开(公告)日：1991-05-21

申请号：US354116

申请日：1989-05-22

申请人： Yasunari Soda ,  Kozo Mochiji ,  Hiroaki Oizumi ,  Takeshi Kimura

发明人： Yasunari Soda ,  Kozo Mochiji ,  Hiroaki Oizumi ,  Takeshi Kimura

IPC分类号： G03F7/004 ,  C08F2/46 ,  C08F291/00 ,  C08F291/18 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

CPC分类号： C08F291/18 ,  G03F7/38 ,  Y10S430/143 ,  Y10S430/168 ,  Y10S522/915

摘要： The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.

摘要翻译： 根据本发明的接枝共聚物的制备方法包括以下步骤：当用辐射照射能够与所述第一自由基结合的添加剂以形成对氧稳定的第二自由基时，能够形成第一自由基的基础聚合物，所述步骤 用辐射照射含有添加剂的所述基础聚合物，以及在无氧气氛下引入单体的步骤，从而使所述照射的基础聚合物和所述单体接枝共聚。

公开(公告)号：US4960676A

公开(公告)日：1990-10-02

申请号：US199712

申请日：1988-05-27

申请人： Kozo Mochiji ,  Hiroaki Oizumi ,  Yasunari Soda ,  Takeshi Kimura

发明人： Kozo Mochiji ,  Hiroaki Oizumi ,  Yasunari Soda ,  Takeshi Kimura

IPC分类号： G03F7/027 ,  G03F7/38 ,  H05K3/00

CPC分类号： H05K3/0079 ,  G03F7/027 ,  G03F7/38 ,  H05K2203/0511 ,  H05K2203/086 ,  H05K2203/087 ,  Y10S430/168

摘要： The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

公开(公告)号：US4719161A

公开(公告)日：1988-01-12

申请号：US893780

申请日：1986-08-06

申请人： Takeshi Kimura ,  Kozo Mochiji ,  Hiroshi Okamoto ,  Takao Iwayanagi ,  Tetsuichi Kudo ,  Shinji Kuniyoshi

发明人： Takeshi Kimura ,  Kozo Mochiji ,  Hiroshi Okamoto ,  Takao Iwayanagi ,  Tetsuichi Kudo ,  Shinji Kuniyoshi

IPC分类号： G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/22 ,  Y10S430/143 ,  Y10S430/148 ,  Y10S430/167

摘要： There is disclosed a mask for X-ray lithography wherein a peroxopolytungsten compound is used as an absorber, and a process for producing the same. Since this compound has a sensitivity for electron beams and light and serves as an absorber for X-rays, a mask for X-ray lithorgraphy is made only by applying this compound to a substrate, exposing the same to light to form a transferred pattern, and effecting development. Thus, the step of etching the absorber which is essential in the conventional process, is not needed. Therefore, masks having a highly accurate pattern and few defects can be produced with a high production yield.

摘要翻译： 公开了一种用于X射线光刻的掩模，其中使用过氧多钨化合物作为吸收剂及其制备方法。 由于该化合物对于电子束和光具有灵敏度并且用作X射线的吸收体，所以仅通过将该化合物施加到基底上而将其曝光以形成转印图案来进行X射线透视掩模， 并实现发展。 因此，不需要在常规方法中蚀刻吸收体的步骤。 因此，可以以高的产率获得具有高精度图案和少量缺陷的掩模。

公开(公告)号：US4599737A

公开(公告)日：1986-07-08

申请号：US529710

申请日：1983-09-06

申请人： Takeshi Kimura ,  Hidehito Obayashi ,  Kozo Mochiji

发明人： Takeshi Kimura ,  Hidehito Obayashi ,  Kozo Mochiji

IPC分类号： G03F1/00 ,  G03F1/22 ,  G03F1/68 ,  H01L21/027 ,  G21K5/00

CPC分类号： G03F1/22

摘要： An X-ray mask having a mask pattern formed from nickel or a material having nickel as a principal component supported on a thin membrane. The X-ray mask has characteristics substantially equal to those of the conventional X-ray mask employing Au as a mask pattern and is much lower in price than the Au-containing mask pattern. In addition, since the X-ray mask can easily be formed by electroless plating, it is possible to form a mask pattern with a higher accuracy than that in case of employing Au alone.

摘要翻译： 具有由镍形成的掩模图案的X射线掩模或者以镍为主要成分的材料负载在薄膜上。 X射线掩模具有与使用Au作为掩模图案的常规X射线掩模的特征基本相同的特征，并且价格低于含Au掩模图案。 此外，由于可以容易地通过无电镀形成X射线掩模，因此可以形成比仅使用Au的情况更高的精度的掩模图案。

公开(公告)号：US4788698A

公开(公告)日：1988-11-29

申请号：US28024

申请日：1987-03-17

申请人： Takeshi Kimura ,  Kozo Mochiji ,  Shojiro Asai ,  Hidehito Obayashi

发明人： Takeshi Kimura ,  Kozo Mochiji ,  Shojiro Asai ,  Hidehito Obayashi

IPC分类号： G03F7/20 ,  G21K5/00

CPC分类号： G03F7/70008 ,  G03F7/70991

摘要： An X-ray exposure system including a plurality of X-ray exposure apparatuses each for duplicating a mask pattern on a semiconductor wafer by irradiating an X-ray mask and the semiconductor wafer with synchrotron radiation is disclosed in which a synchrotron radiation path branching device including a reflecting mirror is disposed between a synchrotron ring and the X-ray exposure apparatuses, and the propagation direction of the synchrotron radiation emitted from the synchrotron ring is changed by the reflecting mirror so that the synchrotron radiation from the ring can be introduced into each of the X-ray exposure apparatuses.

摘要翻译： 公开了一种X射线曝光系统，其包括多个X射线曝光装置，每个X射线曝光装置用于通过用同步加速器辐射照射X射线掩模和半导体晶片来复制半导体晶片上的掩模图案，其中同步加速器辐射路径分支装置包括 在同步加速器环和X射线曝光装置之间设置反射镜，并且由反射镜改变从同步加速器环发射的同步加速器辐射的传播方向，使得可以将来自环的同步加速器辐射导入 X射线曝光装置。

公开(公告)号：US5177773A

公开(公告)日：1993-01-05

申请号：US674406

申请日：1991-03-25

申请人： Hiroaki Oizumi ,  Kozo Mochiji ,  Shimpei Iijima

发明人： Hiroaki Oizumi ,  Kozo Mochiji ,  Shimpei Iijima

IPC分类号： G03F1/22

CPC分类号： G03F1/22

摘要： An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.

摘要翻译： X射线掩模包括由能够吸收X射线的材料构成的吸收体图案，由能够透射X射线的材料构成的用于支撑吸收体图案的掩模基板和支撑掩模基板的支撑框架， 其特征在于，所述掩模基板由掩模基板材料构成，所述掩模基板材料的杂质含量被抑制以减少由X射线辐射产生的位置变形。 通过X射线曝光产生位置失真，可以高精度地确保掩模图案的配置。

公开(公告)号：US5485497A

公开(公告)日：1996-01-16

申请号：US195047

申请日：1994-02-14

申请人： Hiroaki Oizumi ,  Masaaki Ito ,  Takashi Soga ,  Taro Ogawa ,  Kozo Mochiji ,  Eiji Takeda

发明人： Hiroaki Oizumi ,  Masaaki Ito ,  Takashi Soga ,  Taro Ogawa ,  Kozo Mochiji ,  Eiji Takeda

IPC分类号： G03F7/20 ,  G21K1/06 ,  G21K5/00

CPC分类号： G03F7/70058 ,  G03F7/708 ,  G21K1/06

摘要： An optical element which allows replication of a refined pattern and a projection exposure apparatus employing the optical element are disposed so that side face portions of predetermined patterns which create shadows from oblique incident exposure radiation may be minimized at a predetermined incidence angle of vacuum ultrasonic radiation or X-radiation, or the patterns of the optical element are formed such that the direction in which incident radiation is reflected regularly and the direction of side faces of the patterns may extend in parallel to each other. When the optical element is irradiated to replicate or image the patterns of the optical element, refined patterns can be replicated or imaged.

摘要翻译： 允许复制精细图案的光学元件和采用光学元件的投影曝光装置被布置成使得可以在预定的真空超声波辐射入射角度使得从倾斜入射曝光辐射产生阴影的预定图案的侧面部分最小化， X射线或光学元件的图案形成为使得入射辐射有规律地反射的方向和图案的侧面的方向可以彼此平行地延伸。 当照射光学元件以复制或成像光学元件的图案时，可以复制或成像精细图案。