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39 条记录 (耗时 0.032 秒)

    Diode-less array for one-time programmable memory
    1.
    发明申请
    Diode-less array for one-time programmable memory 有权
    一次可编程存储器的无二极管阵列

    公开(公告)号：US20070133248A1

    公开(公告)日：2007-06-14

    申请号：US11297529

    申请日：2005-12-08

    申请人： Kuan Chen ,  Yin Chen ,  Tzung Han ,  Ming Chen

    发明人： Kuan Chen ,  Yin Chen ,  Tzung Han ,  Ming Chen

    IPC分类号： G11C17/00

    CPC分类号： G11C17/16 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/101

    摘要： A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.

    摘要翻译： 一次可编程存储器阵列包括在第一行方向上延伸并且设置在第一高度的第一行导体，在第二行方向上延伸并设置在第二高度的第二行导体和沿列方向延伸的列导体 并且设置成与第一行导体相邻并且与第二行导体相邻。 阵列还包括覆盖列导体的至少一部分的电介质层，耦合在列导体上的电介质层和第二行导体之间的熔丝链。

    Manufacturing methods and structures of memory device
    2.
    发明申请
    Manufacturing methods and structures of memory device 有权

    公开(公告)号：US20060030112A1

    公开(公告)日：2006-02-09

    申请号：US10911959

    申请日：2004-08-05

    申请人： Tzung Han ,  Yin Chen ,  Ming Chen

    发明人： Tzung Han ,  Yin Chen ,  Ming Chen

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11534

    摘要： Dual spacer structures are fabricated such that sidewall spacers in a cell region are thinner than sidewall spacers in a periphery region. The fabricating method of memory includes forming a stop layer over the first semiconductor feature and the second semiconductor feature in cell region and periphery region. A spacer layer is formed over the stop layer in the periphery region. The spacer layer is patterned to form a spacer on a sidewall of the second semiconductor feature. An etching process is performed to form a resultant spacer on an interior sidewall of the opening between first semiconductor features. The stop layer on top surfaces of the first and second semiconductor features is removed.

    NAND type multi-bit charge storage memory array and methods for operating and fabricating the same
    3.
    发明申请
    NAND type multi-bit charge storage memory array and methods for operating and fabricating the same 有权
    NAND型多位电荷存储器阵列及其操作和制造方法

    公开(公告)号：US20070115723A1

    公开(公告)日：2007-05-24

    申请号：US11285919

    申请日：2005-11-23

    申请人： Yin Chen ,  Chun Su ,  Ming Chin ,  Chih Yeh ,  Tzung Han

    发明人： Yin Chen ,  Chun Su ,  Ming Chin ,  Chih Yeh ,  Tzung Han

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0483 ,  H01L27/115 ,  H01L27/11568

    摘要： A NAND type multi-bit charge storage memory array comprises a first and a second memory strings each of which includes one or more charge storage memory cells and two select transistors. The charge storage memory cells are connected in series to form a memory cell string. The two select transistors are connected in series to both ends of the memory cell string, respectively. The NAND type multi-bit charge storage memory array further comprises a shared bit line and a first and a second bit lines. The shared bit line is connected with the first ends of the first and the second memory strings. The first and the second bit lines are connected to the second ends of the first and the second memory strings, respectively. The first select transistor and the second select transistor of each memory string are controlled by a first and a second select transistor control lines, respectively.

    摘要翻译： NAND型多位电荷存储存储器阵列包括第一和第二存储器串，每个存储器串包括一个或多个电荷存储存储单元和两个选择晶体管。 电荷存储存储单元串联连接以形成存储单元串。 两个选择晶体管分别串联连接到存储单元串的两端。 NAND型多位电荷存储存储器阵列还包括共享位线和第一位线和第二位线。 共享位线与第一和第二存储器串的第一端连接。 第一和第二位线分别连接到第一和第二存储器串的第二端。 每个存储器串的第一选择晶体管和第二选择晶体管分别由第一和第二选择晶体管控制线控制。

    Alicyclic[c] benzopyrone derivatives and uses thereof
    4.
    发明授权
    Alicyclic[c] benzopyrone derivatives and uses thereof 有权
    脂环式[c]苯并吡喃酮衍生物及其用途

    公开(公告)号：US09018213B2

    公开(公告)日：2015-04-28

    申请号：US14236208

    申请日：2012-07-31

    申请人： Guisen Zhang ,  Yin Chen ,  Xiangqing Xu ,  Xin Liu ,  Song Zhao ,  Bifeng Liu ,  Minquan Yu ,  Yinli Qiu

    发明人： Guisen Zhang ,  Yin Chen ,  Xiangqing Xu ,  Xin Liu ,  Song Zhao ,  Bifeng Liu ,  Minquan Yu ,  Yinli Qiu

    IPC分类号： A61K31/496 ,  A61K31/453 ,  A61K31/454 ,  C07D311/94 ,  C07D405/12 ,  C07D417/12 ,  C07D417/14 ,  C07D413/14 ,  C07D311/80 ,  C07D409/12

    CPC分类号： C07D311/94 ,  A61K31/453 ,  A61K31/454 ,  A61K31/496 ,  C07D311/80 ,  C07D405/12 ,  C07D409/12 ,  C07D413/14 ,  C07D417/12 ,  C07D417/14

    摘要： Disclosed are alicyclic[c]benzopyrone derivatives and use thereof. The alicyclic[c]benzopyrone derivatives are compounds represented by formula I or their salts. The present compounds not only significantly improve high activity induced by MK-801, but also effectively improve clambering symptom induced by Apomorphine and do not cause EPS within effective dose. These in vitro targets and in vivo pharmacological models are closely related to diseases of the nervous system caused by dopamine dysfunction, especially schizophrenia. Therefore the present compounds can be used for the treatment of central nervous system diseases, especially schizophrenia. ED50 is lower and effect is stronger in two animal models i.e. high activity induced by MK-801 and clambering symptom induced by Apomorphine, while ED50 is higher and therapeutic index is greater in animal models of catalepsy.

    摘要翻译： 公开了脂环族[c]苯并吡喃酮衍生物及其用途。 脂环式[c]苯并吡喃酮衍生物是由式I表示的化合物或其盐。 本发明化合物不仅显着改善了MK-801诱导的高活性，而且有效地改善了阿扑吗啡引起的痉挛症状，不会有效剂量引起EPS。 这些体外靶标和体内药理学模型与由多巴胺功能障碍，特别是精神分裂症引起的神经系统疾病密切相关。 因此，本发明化合物可用于治疗中枢神经系统疾病，特别是精神分裂症。 ED50较低，两种动物模型中效果更强，即由MK-801诱导的高活性和阿扑吗啡引起的痉挛症状，而ED50较高，而在僵住症的动物模型中治疗指数更高。

    Single-stranded antimicrobial oligonucleotides and uses thereof
    5.
    发明授权
    Single-stranded antimicrobial oligonucleotides and uses thereof 有权
    单链抗体寡核苷酸及其用途

    公开(公告)号：US08828958B2

    公开(公告)日：2014-09-09

    申请号：US11664052

    申请日：2005-09-28

    申请人： Yin Chen ,  Xin Xing Tan

    发明人： Yin Chen ,  Xin Xing Tan

    IPC分类号： C07H21/04 ,  C12N15/11 ,  C12N15/00

    CPC分类号： C12N15/113 ,  C12N15/111 ,  C12N2310/11 ,  C12N2310/111 ,  C12N2310/16 ,  C12N2320/11 ,  C12N2320/30 ,  C12N2330/31 ,  C12N2330/50

    摘要： The current invention is directed to oligonucleotide sequences isolated from a sequence designated rbl-1 [SEQ ID NO. 19] that either kill or inhibit growth, or prevent the production of endogenously expressed toxin, of microorganisms. These ssDNA sequences, identified through use of a screening method, appear to act as modulators of essential growth functions which may act at the level of triplex formation, antisense inhibition, or as aptamers that alter gene function. The sequences, referred to as minimum functional regions, or MFRs, are useful inter alia as therapeutic agents for treatment of sepsis and other pathologies caused by microorganisms such as sepsis and/or in which microorganisms are contributory agents.

    摘要翻译： 本发明涉及从命名为rbl-1 [SEQ ID NO.1]的序列分离的寡核苷酸序列。 19]可以杀死或抑制微生物的生长，或阻止生成内源性表达的毒素。 通过使用筛选方法鉴定的这些ssDNA序列似乎可以作为必需生长功能的调节剂，其可以在三重形成，反义抑制水平或作为改变基因功能的适体的作用下起作用。 称为最小功能区域或MFR的序列尤其可用作治疗败血症的治疗剂和由诸如败血症和/或其中微生物是贡献剂的微生物引起的其它病症。

    ALICYCLIC[C] BENZOPYRONE DERIVATIVES AND USES THEREOF
    6.
    发明申请
    ALICYCLIC[C] BENZOPYRONE DERIVATIVES AND USES THEREOF 有权
    ALICYCLIC [C]苯并噻吩衍生物及其用途

    公开(公告)号：US20140171442A1

    公开(公告)日：2014-06-19

    申请号：US14236208

    申请日：2012-07-31

    申请人： Guisen Zhang ,  Yin Chen ,  Xiangqing Xu ,  Xin Liu ,  Song Zhao ,  Bifeng Liu ,  Miquan Yu ,  Yinli Qiu

    发明人： Guisen Zhang ,  Yin Chen ,  Xiangqing Xu ,  Xin Liu ,  Song Zhao ,  Bifeng Liu ,  Miquan Yu ,  Yinli Qiu

    IPC分类号： C07D311/94 ,  C07D413/14 ,  C07D417/12 ,  C07D409/12

    CPC分类号： C07D311/94 ,  A61K31/453 ,  A61K31/454 ,  A61K31/496 ,  C07D311/80 ,  C07D405/12 ,  C07D409/12 ,  C07D413/14 ,  C07D417/12 ,  C07D417/14

    摘要： Disclosed are alicyclic[c]benzopyrone derivatives and use thereof. The alicyclic[c]benzopyrone derivatives are compounds represented by formula I or their salts. The present compounds not only significantly improve high activity induced by MK-801, but also effectively improve clambering symptom induced by Apomorphine and do not cause EPS within effective dose. These in vitro targets and in vivo pharmacological models are closely related to diseases of the nervous system caused by dopamine dysfunction, especially schizophrenia. Therefore the present compounds can be used for the treatment of central nervous system diseases, especially schizophrenia. ED50 is lower and effect is stronger in two animal models i.e. high activity induced by MK-801 and clambering symptom induced by Apomorphine, while ED50 is higher and therapeutic index is greater in animal models of catalepsy.

    摘要翻译： 公开了脂环族[c]苯并吡喃酮衍生物及其用途。 脂环式[c]苯并吡喃酮衍生物是由式I表示的化合物或其盐。 本发明化合物不仅显着改善了MK-801诱导的高活性，而且有效地改善了阿扑吗啡引起的痉挛症状，不会有效剂量引起EPS。 这些体外靶标和体内药理学模型与由多巴胺功能障碍，特别是精神分裂症引起的神经系统疾病密切相关。 因此，本发明化合物可用于治疗中枢神经系统疾病，特别是精神分裂症。 ED50较低，两种动物模型中效果更强，即由MK-801诱导的高活性和阿扑吗啡引起的痉挛症状，而ED50较高，而在僵住症的动物模型中治疗指数更高。

    Nonvolatile memory device and method of forming the same
    8.
    发明申请
    Nonvolatile memory device and method of forming the same 有权
    非易失存储器件及其形成方法

    公开(公告)号：US20070040211A1

    公开(公告)日：2007-02-22

    申请号：US11209145

    申请日：2005-08-22

    申请人： Shao Ku ,  Yin Chen ,  Wenpin Lu ,  Tahui Wang

    发明人： Shao Ku ,  Yin Chen ,  Wenpin Lu ,  Tahui Wang

    IPC分类号： H01L29/792

    CPC分类号： H01L29/7923 ,  H01L29/1045

    摘要： A multi-bit memory cell includes a substrate; a multi-bit charge-trapping cell over the substrate, the multi-bit charge-trapping cell having a first lateral side and a second lateral side; a source region in the substrate, a portion of the source region being under the first side of the multi-bit charge-trapping cell; a drain region in the substrate, a portion of the drain region being under the second side of the multi-bit charge-trapping cell; and a channel region in the substrate between the source region and the drain region. The channel region has one of a p-type doping and an n-type doping, and the doping is configured to provide a highest doping concentration near the central portion of the channel region.

    摘要翻译： 多位存储单元包括基板; 位于衬底上的多位电荷俘获电池，所述多位电荷俘获电池具有第一侧面和第二侧面; 源区域，源区域中的一部分位于多位电荷捕获单元的第一侧之下; 所述衬底中的漏极区域，所述漏极区域的一部分位于所述多位电荷俘获电池的第二侧的下方; 以及在源极区域和漏极区域之间的衬底中的沟道区域。 沟道区具有p型掺杂和n型掺杂之一，并且掺杂被配置为在沟道区的中心部分附近提供最高的掺杂浓度。

    Single-Stranded Antimicrobial Oligonucleotides and Uses Thereof
    10.
    发明申请
    Single-Stranded Antimicrobial Oligonucleotides and Uses Thereof 有权
    单链抗菌寡核苷酸及其用途

    公开(公告)号：US20080206154A1

    公开(公告)日：2008-08-28

    申请号：US11664052

    申请日：2005-09-28

    申请人： Yin Chen ,  Xin Xing Tan

    发明人： Yin Chen ,  Xin Xing Tan

    IPC分类号： A61K31/713 ,  C07H21/02 ,  C12N15/66 ,  A61P31/00 ,  C07H21/04 ,  C12N5/00

    CPC分类号： C12N15/113 ,  C12N15/111 ,  C12N2310/11 ,  C12N2310/111 ,  C12N2310/16 ,  C12N2320/11 ,  C12N2320/30 ,  C12N2330/31 ,  C12N2330/50

    摘要： The current invention is directed to oligonucleotide sequences isolated from a sequence designated rbl-1 [SEQ ID NO. 19] that either kill or inhibit growth, or prevent the production of endogenously expressed toxin, of microorganisms. These ssDNA sequences, identified through use of a screening method, appear to act as modulators of essential growth functions which may act at the level of triplex formation, antisense inhibition, or as aptamers that alter gene function. The sequences, referred to as minimum functional regions, or MFRs, are useful inter alia as therapeutic agents for treatment of sepsis and other pathologies caused by microorganisms such as sepsis and/or in which microorganisms are contributory agents.

    摘要翻译： 本发明涉及从命名为rbl-1 [SEQ ID NO.1]的序列分离的寡核苷酸序列。 19]可以杀死或抑制微生物的生长，或阻止生成内源性表达的毒素。 通过使用筛选方法鉴定的这些ssDNA序列似乎可以作为必需生长功能的调节剂，其可以在三重生成，反义抑制水平或作为改变基因功能的适体的作用下起作用。 称为最小功能区域或MFR的序列尤其可用作治疗败血症的治疗剂和由诸如败血症和/或其中微生物是贡献剂的微生物引起的其它病症。