Thin films of ferroelectric materials and a method for preparing same
    1.
    发明授权
    Thin films of ferroelectric materials and a method for preparing same 有权
    铁电材料薄膜及其制备方法

    公开(公告)号:US08696812B2

    公开(公告)日:2014-04-15

    申请号:US12773593

    申请日:2010-05-04

    IPC分类号: C30B7/00

    摘要: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

    摘要翻译: 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

    Thin films of ferroelectric materials and a method for preparing same
    2.
    发明授权
    Thin films of ferroelectric materials and a method for preparing same 有权
    铁电材料薄膜及其制备方法

    公开(公告)号:US08124251B2

    公开(公告)日:2012-02-28

    申请号:US11333774

    申请日:2006-01-17

    IPC分类号: B32B9/00

    摘要: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

    摘要翻译: 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

    Thin Films of Ferroelectric Materials and a Method for Preparing Same
    3.
    发明申请
    Thin Films of Ferroelectric Materials and a Method for Preparing Same 有权
    铁电材料薄膜及其制备方法

    公开(公告)号:US20100221415A1

    公开(公告)日:2010-09-02

    申请号:US12773593

    申请日:2010-05-04

    IPC分类号: B05D5/12

    摘要: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

    摘要翻译: 基本上在钙钛矿相中具有高摩尔分数的Pb(A2 + 1 / 3B5 + 2/3)O3的铁电材料薄膜,其中A是锌或锌和镁的组合,B是价数5元素 作为铌或钽制备。 通常,铁电材料中Pb(A2 + 1 / 3B5 + 2/3)O3的摩尔分数> 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A2 +和B5 +的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。

    Thin films of ferroelectric materials and a method for preparing same
    4.
    发明申请
    Thin films of ferroelectric materials and a method for preparing same 有权
    铁电材料薄膜及其制备方法

    公开(公告)号:US20060183249A1

    公开(公告)日:2006-08-17

    申请号:US11333774

    申请日:2006-01-17

    IPC分类号: H01L21/00

    摘要: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

    摘要翻译: 具有高摩尔分数Pb(A 2+ 3 + 3/5 + 5 + 2/3)的铁电材料薄膜, 基本上在钙钛矿相中,其中A是锌或锌和镁的组合,并且B是价数5元素如铌或钽。 通常,Pb(A 2+ + 3/3→5 + 2/3/3)O的摩尔分数 铁电体材料中的<3> > 0.7。 制备铁电材料薄膜的方法包括提供含有铅,A 2+ +和B 5+的前体溶液; 通过向其中加入聚合物物质来改性前体溶液; 将改性的前体溶液施加到基材的表面上并在其上形成涂层; 和(d)对涂层进行热处理,并在钙钛矿相中形成膜。 PEG200作为聚合物种类已获得最佳结果。