UTILITY ENGINE
    1.
    发明申请
    UTILITY ENGINE 审中-公开
    实用发动机

    公开(公告)号:US20080251054A1

    公开(公告)日:2008-10-16

    申请号:US11954837

    申请日:2007-12-12

    IPC分类号: F02M33/02

    摘要: A utility engine has a cylinder body extending obliquely upward from a crankcase and a cylinder head attached to an end of the cylinder body. The utility engine has a carburetor attached to a side of the cylinder head and an air cleaner attached to a side of the carburetor opposite the cylinder head. The canister is located below the carburetor and adjacent to the air cleaner.

    摘要翻译: 一种公用事业发动机具有从曲轴箱向斜上方延伸的缸体和附接到缸体的端部的气缸盖。 该公用事业发动机具有安装在气缸盖一侧的化油器和附着在与气缸盖相对的化油器一侧的空气净化器。 罐位于化油器下方并与空气净化器相邻。

    METHOD OF PRODUCING FRUIT OF CAPSICUM PLANT WITH VITAMIN C CONTENT INCREASED
    4.
    发明申请
    METHOD OF PRODUCING FRUIT OF CAPSICUM PLANT WITH VITAMIN C CONTENT INCREASED 审中-公开
    生产维生素C含量增加的植物水果的方法

    公开(公告)号:US20090133157A1

    公开(公告)日:2009-05-21

    申请号:US12273966

    申请日:2008-11-19

    申请人: Shinya Tsuda

    发明人: Shinya Tsuda

    IPC分类号: A01H5/08 C12N15/82 A01H5/00

    CPC分类号: C12N15/8242

    摘要: The object of the present invention is to provide a method of producing a fruit of a Capsicum plant in which a vitamin C content, in particular a vitamin C content alone, is increased according to a common cultivating procedure without requiring special facility and cultivating procedure. The present invention provides a method of producing a fruit of a Capsicum plant with an increased vitamin C content, characterized by inoculating an attenuated strain of a virus belonging to Tomamovirus to a seedling of the Capsicum plant and cultivating the seedling to the Capsicum plant.

    摘要翻译: 本发明的目的是提供一种生产辣椒植物的果实的方法,其中维生素C含量,特别是单独的维生素C含量根据普通栽培方法而增加,而不需要特殊的设施和培养程序。 本发明提供一种生产具有增加的维生素C含量的辣椒植物的果实的方法,其特征在于将属于汤玛诺病毒的病毒的减毒菌株接种到辣椒植物的幼苗上并将辣椒种植至辣椒植物。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5200630A

    公开(公告)日:1993-04-06

    申请号:US742578

    申请日:1991-08-07

    IPC分类号: H01L29/786

    CPC分类号: H01L29/7866

    摘要: A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are formed on the upper face of the semiconducting layer, the improvement comprising: a further semiconducting layer made of amorphous silicon, which is provided between the semiconducting layer and the insulating film.

    摘要翻译: 一种半导体器件,包括由多晶硅制成的半导体层,设置在半导体层的上表面上的绝缘膜和设置在绝缘膜的上表面上的电极,使得在半导体层的上表面上形成沟道, 该改进包括:设置在半导体层和绝缘膜之间的由非晶硅制成的另外的半导体层。