公开(公告)号：US5035753A

公开(公告)日：1991-07-30

申请号：US453310

申请日：1989-12-22

申请人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

发明人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/046 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

摘要翻译： 太阳能电池包括形成在基板上的多个串联连接的光电转换结构。 转换结构由P型的第一半导体膜，形成在第一半导体膜上的本征半导体膜，使得其一端延伸超过第一半导体膜的端部，第二半导体膜的第二相反电导率 形成在本征半导体膜上，使得其一端延伸超过本征半导体膜的延伸端并与相邻结构的第一半导体膜的端部直接电接触。

公开(公告)号：US4987005A

公开(公告)日：1991-01-22

申请号：US396795

申请日：1989-08-21

申请人： Kunio Suzuki ,  Takeshi Fukada ,  Mikio Kinka ,  Masayoshi Abe ,  Katsuhiko Shibata ,  Masato Susukida ,  Noriya Ishida ,  Akemi Satake ,  Yasuyuki Arai

发明人： Kunio Suzuki ,  Takeshi Fukada ,  Mikio Kinka ,  Masayoshi Abe ,  Katsuhiko Shibata ,  Masato Susukida ,  Noriya Ishida ,  Akemi Satake ,  Yasuyuki Arai

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/50 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/32431 ,  C23C16/509 ,  C23C16/54

摘要： An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.

摘要翻译： 示出了在多个基板上均匀地制造或均匀蚀刻的改进方法。 将基板垂直放置在反应室中，以便立即进行处理。 化学气相反应是通过以其振幅调制的高频电力进行的。 通过这种调制，沉积或蚀刻可以在悬臂梁的表面上进行。

公开(公告)号：US5302226A

公开(公告)日：1994-04-12

申请号：US892710

申请日：1992-05-29

申请人： Shunpei Yamazaki ,  Naoki Hirose ,  Masaya Kadono ,  Kenji Itoh ,  Toru Takayama ,  Yasuyuki Arai ,  Noriya Ishida

发明人： Shunpei Yamazaki ,  Naoki Hirose ,  Masaya Kadono ,  Kenji Itoh ,  Toru Takayama ,  Yasuyuki Arai ,  Noriya Ishida

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32449 ,  H01J37/32192 ,  H01J37/3244

摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

摘要翻译： 微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。 保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。 通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

公开(公告)号：US5609774A

公开(公告)日：1997-03-11

申请号：US194571

申请日：1994-02-10

申请人： Shunpei Yamazaki ,  Masaya Kadono ,  Kenji Itoh ,  Toru Takayama ,  Yasuyuki Arai ,  Noriya Ishida

发明人： Shunpei Yamazaki ,  Masaya Kadono ,  Kenji Itoh ,  Toru Takayama ,  Yasuyuki Arai ,  Noriya Ishida

IPC分类号： H01J37/32 ,  H01L21/302

CPC分类号： H01J37/32449 ,  H01J37/32192 ,  H01J37/3244

摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

摘要翻译： 微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。 保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。 通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

公开(公告)号：US07666766B2

公开(公告)日：2010-02-23

申请号：US11526097

申请日：2006-09-25

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US08192545B2

公开(公告)日：2012-06-05

申请号：US13154503

申请日：2011-06-07

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23C16/458

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US20070123005A1

公开(公告)日：2007-05-31

申请号：US11526097

申请日：2006-09-25

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： C23C16/00 ,  H01L21/20 ,  H05H1/24

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US07985664B2

公开(公告)日：2011-07-26

申请号：US12627473

申请日：2009-11-30

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US06720576B1

公开(公告)日：2004-04-13

申请号：US09149289

申请日：1998-09-09

申请人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

发明人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

IPC分类号： H01L2904

CPC分类号： H01L31/202 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

公开(公告)号：US07095090B2

公开(公告)日：2006-08-22

申请号：US10821879

申请日：2004-04-12

申请人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

发明人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

IPC分类号： H01L31/0203

CPC分类号： H01L31/202 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

摘要翻译： 采用薄膜形式并具有差的耐热性的基板的光电转换装置。 该装置防止通常由于对基板局部施加过多热量引起的热变形。 该装置具有允许从装置输出的输出端子被取出。 输出端子形成在与光电转换装置相对的基板的表面上。 该装置还包括用于将装置的电极与输出端子电连接的电连接器部分。 本发明还提供了一种以高通量用等离子体处理耐热性差的基板的方法。 将基板连续地供给到反应室中并用等离子体处理。 这种供给操作是这样进行的：存在于由电极形成的等离子体处理区域中的基板的总长度比电极的长度长。