公开(公告)号：US20060149392A1

公开(公告)日：2006-07-06

申请号：US11295303

申请日：2005-12-06

申请人： Kuo-Huang Hsieh ,  Ken-Yu Chang ,  Chun-Pin Lin ,  Liou Horng ,  Yung-Hsin Lin

发明人： Kuo-Huang Hsieh ,  Ken-Yu Chang ,  Chun-Pin Lin ,  Liou Horng ,  Yung-Hsin Lin

IPC分类号： A61F2/28 ,  C12N5/08

CPC分类号： A61L31/148 ,  A61F2/30756 ,  A61F2002/2817 ,  A61F2002/30062 ,  A61F2002/30677 ,  A61F2002/30678 ,  A61F2210/0004 ,  A61F2310/00293 ,  A61F2310/00365 ,  A61F2310/00383 ,  A61F2310/00796 ,  A61L27/20 ,  A61L27/46 ,  A61L27/58 ,  A61L31/042 ,  A61L31/127 ,  C08L5/08

摘要： The present invention is directed to compositions and methods of using compositions comprising a scaffold with growth factors chemically immobilized thereto for inducing chondrogenesis and/or osteogenesis when implanted in vivo or osteogenesis or chondrogenesis in cultures in vitro. The compositions and methods enhance bone and cartilage growth. Also described are compositions and methods for targeted drug delivery.

摘要翻译： 本发明涉及组合物和方法，所述组合物包含具有化学固定于其上的生长因子的支架的组合物，用于在体内植入体内或在体外培养中的成骨或软骨形成时诱导软骨形成和/或成骨。 组合物和方法增强骨和软骨生长。 还描述了用于靶向药物递送的组合物和方法。

公开(公告)号：US20110241207A1

公开(公告)日：2011-10-06

申请号：US12753272

申请日：2010-04-02

申请人： Cheng Cheng Kuo ,  Luke Lo ,  Minghsing Tsai ,  Ken-Yu Chang ,  Jye-Yen Cheng ,  Jeng-Shiun Ho ,  Hua-Tai Lin ,  Chih-Hsiang Yao

发明人： Cheng Cheng Kuo ,  Luke Lo ,  Minghsing Tsai ,  Ken-Yu Chang ,  Jye-Yen Cheng ,  Jeng-Shiun Ho ,  Hua-Tai Lin ,  Chih-Hsiang Yao

IPC分类号： H01L23/52 ,  G06F17/50

CPC分类号： H01L21/76838 ,  G06F17/5068 ,  G06F17/5072 ,  G06F17/5077 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor integrated circuit line structures for improving a process window in the vicinity of dense-to-isolated pattern transition areas and a technique to implement the line structures in the layout process are described in this disclosure. The disclosed structure includes a semiconductor substrate, and a material layer above the substrate. The material layer has a closely spaced dense line structure, an isolated line structure next to the dense line structure, and a dummy line shoulder structure formed in the vicinity of the dense line and the isolated line structures. One end of the dummy line shoulder structure connects to the isolated line structure and another end extends away from the isolated line structure in an orientation substantially perpendicular to the isolated line structure.

摘要翻译： 在本公开中描述了用于改善密集到隔离图案转移区域附近的处理窗口的半导体集成电路线结构和在布局处理中实现线结构的技术。 所公开的结构包括半导体衬底和衬底上方的材料层。 材料层具有紧密间隔的密集线结构，紧密密集线结构旁边的隔离线结构，以及形成在密集线附近和隔离线结构处的虚拟线肩结构。 虚拟线肩结构的一端连接到隔离线结构，另一端以基本垂直于隔离线结构的方向远离隔离线结构延伸。

公开(公告)号：US08692351B2

公开(公告)日：2014-04-08

申请号：US12753272

申请日：2010-04-02

申请人： Cheng Cheng Kuo ,  Luke Lo ,  Minghsing Tsai ,  Ken-Yu Chang ,  Jye-Yen Cheng ,  Jeng-Shiun Ho ,  Hua-Tai Lin ,  Chih-Hsiang Yao

发明人： Cheng Cheng Kuo ,  Luke Lo ,  Minghsing Tsai ,  Ken-Yu Chang ,  Jye-Yen Cheng ,  Jeng-Shiun Ho ,  Hua-Tai Lin ,  Chih-Hsiang Yao

IPC分类号： H01L21/70

CPC分类号： H01L21/76838 ,  G06F17/5068 ,  G06F17/5072 ,  G06F17/5077 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor integrated circuit line structures for improving a process window in the vicinity of dense-to-isolated pattern transition areas and a technique to implement the line structures in the layout process are described in this disclosure. The disclosed structure includes a semiconductor substrate, and a material layer above the substrate. The material layer has a closely spaced dense line structure, an isolated line structure next to the dense line structure, and a dummy line shoulder structure formed in the vicinity of the dense line and the isolated line structures. One end of the dummy line shoulder structure connects to the isolated line structure and another end extends away from the isolated line structure in an orientation substantially perpendicular to the isolated line structure.

摘要翻译： 在本公开中描述了用于改善密集到隔离图案转移区域附近的处理窗口的半导体集成电路线结构和在布局处理中实现线结构的技术。 所公开的结构包括半导体衬底和衬底上方的材料层。 材料层具有紧密间隔的密集线结构，紧密密集线结构旁边的隔离线结构，以及形成在密集线附近和隔离线结构处的虚拟线肩结构。 虚拟线肩结构的一端连接到隔离线结构，另一端以基本垂直于隔离线结构的方向远离隔离线结构延伸。