公开(公告)号：US20060208316A1

公开(公告)日：2006-09-21

申请号：US11081993

申请日：2005-03-16

申请人： Kuo-Nan Yang ,  Yi-Ling Chang ,  You-Lin Chu ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

发明人： Kuo-Nan Yang ,  Yi-Ling Chang ,  You-Lin Chu ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

IPC分类号： H01L29/94

CPC分类号： H01L29/88 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure and a method for its manufacture are provided. In one example, the structure includes a well region doped with a first type dopant (e.g., a P-type or N-type dopant). A gate pedestal formed over the well region has two ends, one of which at least partially overlies the well region and is doped with the first type dopant. A dielectric layer is positioned between the gate pedestal and the well region. Source and drain regions formed on opposite sides of the gate pedestal within the well region are doped with a second type dopant opposite in type to the first type dopant.

摘要翻译： 提供半导体结构及其制造方法。 在一个示例中，该结构包括掺杂有第一类型掺杂剂的阱区（例如，P型或N型掺杂剂）。 形成在阱区上方的栅极基座具有两个端部，其中一个端部至少部分地覆盖阱区域并且掺杂有第一类型的掺杂剂。 电介质层位于门基座和阱区之间。 形成在阱区内的栅极基座的相对侧上的源极和漏极区域掺杂有与第一类型掺杂物类型相反的第二类型掺杂物。

公开(公告)号：US07187000B2

公开(公告)日：2007-03-06

申请号：US11081993

申请日：2005-03-16

申请人： Kuo-Nan Yang ,  Yi-Ling Chang ,  You-Lin Chu ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

发明人： Kuo-Nan Yang ,  Yi-Ling Chang ,  You-Lin Chu ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

IPC分类号： H01L23/62 ,  H01L29/10

CPC分类号： H01L29/88 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure and a method for its manufacture are provided. In one example, the structure includes a well region doped with a first type dopant (e.g., a P-type or N-type dopant). A gate pedestal formed over the well region has two ends, one of which at least partially overlies the well region and is doped with the first type dopant. A dielectric layer is positioned between the gate pedestal and the well region. Source and drain regions formed on opposite sides of the gate pedestal within the well region are doped with a second type dopant opposite in type to the first type dopant.

摘要翻译： 提供半导体结构及其制造方法。 在一个示例中，该结构包括掺杂有第一类型掺杂剂的阱区（例如，P型或N型掺杂剂）。 形成在阱区上方的栅极基座具有两个端部，其中一个端部至少部分地覆盖阱区域并且掺杂有第一类型的掺杂剂。 电介质层位于门基座和阱区之间。 形成在阱区内的栅极基座的相对侧上的源极和漏极区域掺杂有与第一类型掺杂物类型相反的第二类型掺杂物。

公开(公告)号：US20090200265A1

公开(公告)日：2009-08-13

申请号：US11957594

申请日：2007-12-17

申请人： Yi-Ling Chang

发明人： Yi-Ling Chang

IPC分类号： C23F1/00 ,  B05D5/12 ,  C25D3/46 ,  B23K1/20

CPC分类号： H01L23/49548 ,  H01L21/4828 ,  H01L23/3121 ,  H01L23/49582 ,  H01L23/49861 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012

摘要： The present invention discloses a lead frame fabrication method, wherein a metallic plate is locally fabricated in double sides to form accurately aligned and closely spaced circuits; the metallic plate is also locally fabricated in single side to form patterned trenches; a filling material is filled into the trenches to provide extra mechanical support and separate the metallic plate into a plurality of conductive regions or regions with special electric properties. The present invention can overcome the conventional problems in lead frame fabrication and has the advantages of a superior heat-dissipating ability, multi-leads and diversified applications.

摘要翻译： 本发明公开了一种引线框架制造方法，其中金属板局部制造在双面以形成精确对准和紧密间隔的电路; 金属板也局部地制造在单面以形成图案化的沟槽; 将填充材料填充到沟槽中以提供额外的机械支撑并将金属板分离成具有特殊电性能的多个导电区域或区域。 本发明可以克服引线框架制造中的常规问题，具有优异的散热能力，多引线和多种应用的优点。

公开(公告)号：US20080029855A1

公开(公告)日：2008-02-07

申请号：US11462377

申请日：2006-08-04

申请人： Yi-Ling Chang

发明人： Yi-Ling Chang

IPC分类号： H01L23/495

CPC分类号： H01L23/49548 ,  H01L21/4828 ,  H01L23/3121 ,  H01L23/49582 ,  H01L23/49861 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A lead frame and a fabrication method thereof includes a metallic plate locally fabricated in double sides to form accurately aligned and closely spaced circuits. The metallic plate is also locally fabricated in single side to form patterned trenches. A filling material is filled into the trenches to provide extra mechanical support and separate the metallic plate into a plurality of conductive regions or regions with special electric properties. It can overcome the conventional problems in lead frame fabrication and has the advantages of a superior heat-dissipating ability, multi-leads and diversified applications.

摘要翻译： 引线框架及其制造方法包括以双面局部制造的金属板，以形成准确对准且紧密间隔的电路。 金属板也是局部地制造在单面以形成图案化的沟槽。 将填充材料填充到沟槽中以提供额外的机械支撑并将金属板分离成具有特殊电性能的多个导电区域或区域。 可以克服引线框架制造中的常规问题，具有优异的散热能力，多引线和多种应用的优点。