Transparent conductive film-preparing method and transparent film prepared therefrom
    1.
    发明授权
    Transparent conductive film-preparing method and transparent film prepared therefrom 有权
    透明导电膜制备方法和由其制备的透明膜

    公开(公告)号:US09269478B2

    公开(公告)日:2016-02-23

    申请号:US13813205

    申请日:2011-07-27

    IPC分类号: H01B1/12 H01B13/00 C08J7/04

    摘要: Provided are a method for preparing a transparent conductive layer and a transparent conductive layer prepared by the method. The method for preparing a transparent conductive layer includes: 1) forming a cellulose derivative film by coating a transparent substrate with a cellulose derivative coating liquid; 2) hydrolyzing the cellulose derivatives by treating the cellulose derivative film using an alkaline agent; 3) forming a metal film by coating the hydrolyzed cellulose derivative film with an organic metal ink and reducing metals on the cellulose derivative; and 4) forming a conductive metal layer by heat-treating the cellulose derivative film with the metal film formed, and a transparent conductive layer prepared by the method. According to the present invention, a process can be simplified, and also a transparent conductive layer having excellent conductivity, transmittance, bending resistance, and low haze can be prepared.

    摘要翻译: 提供一种通过该方法制备透明导电层和透明导电层的方法。 制备透明导电层的方法包括:1)通过用纤维素衍生物涂布液涂覆透明基材来形成纤维素衍生物膜; 2)通过使用碱性试剂处理纤维素衍生物膜来水解纤维素衍生物; 3)通过用有机金属油墨涂覆水解的纤维素衍生物膜并在纤维素衍生物上还原金属来形成金属膜; 以及4)通过用形成的金属膜热处理纤维素衍生物膜和通过该方法制备的透明导电层来形成导电金属层。 根据本发明,可以简化工艺,并且可以制备具有优异的导电性,透射率,抗弯曲性和低雾度的透明导电层。

    TRANSPARENT CONDUCTIVE FILM-PREPARING METHOD AND TRANSPARENT FILM PREPAREDTHEREFROM
    2.
    发明申请
    TRANSPARENT CONDUCTIVE FILM-PREPARING METHOD AND TRANSPARENT FILM PREPAREDTHEREFROM 有权
    透明导电膜制备方法和透明膜制备

    公开(公告)号:US20130216844A1

    公开(公告)日:2013-08-22

    申请号:US13813205

    申请日:2011-07-27

    IPC分类号: H01B13/00 H01B1/12

    摘要: Provided are a method for preparing a transparent conductive layer and a transparent conductive layer prepared by the method. The method for preparing a transparent conductive layer includes: 1) forming a cellulose derivative film by coating a transparent substrate with a cellulose derivative coating liquid; 2) hydrolyzing the cellulose derivatives by treating the cellulose derivative film using an alkaline agent; 3) forming a metal film by coating the hydrolyzed cellulose derivative film with an organic metal ink and reducing metals on the cellulose derivative; and 4) forming a conductive metal layer by heat-treating the cellulose derivative film with the metal film formed, and a transparent conductive layer prepared by the method. According to the present invention, a process can be simplified, and also a transparent conductive layer having excellent conductivity, transmittance, bending resistance, and low haze can be prepared.

    摘要翻译: 提供一种通过该方法制备透明导电层和透明导电层的方法。 制备透明导电层的方法包括:1)通过用纤维素衍生物涂布液涂覆透明基材来形成纤维素衍生物膜; 2)通过使用碱性试剂处理纤维素衍生物膜来水解纤维素衍生物; 3)通过用有机金属油墨涂覆水解的纤维素衍生物膜并在纤维素衍生物上还原金属来形成金属膜; 以及4)通过用形成的金属膜热处理纤维素衍生物膜和通过该方法制备的透明导电层来形成导电金属层。 根据本发明,可以简化工艺,并且可以制备具有优异的导电性,透射率,抗弯曲性和低雾度的透明导电层。

    Laser beam pattern mask and crystallization method using the same
    5.
    发明授权
    Laser beam pattern mask and crystallization method using the same 有权
    激光束图案掩模和结晶法使用相同

    公开(公告)号:US07553366B2

    公开(公告)日:2009-06-30

    申请号:US11528350

    申请日:2006-09-28

    申请人: Yun Ho Jung

    发明人: Yun Ho Jung

    IPC分类号: C30B1/00

    摘要: A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between the central portion and the corresponding edge portion, an upper outside extending from an upper end of the boundary line at an acute angle, and a lower outside extending from a lower end of the boundary line at the acute angle to meet the upper outside at a rounded corner.

    摘要翻译: 激光束图形掩模包括至少一个或多个透射部分,每个透射部分具有设置在中心部分的两侧的中心部分和一对边缘部分,每一个具有基本上三角形的形状, 中心部分和相应的边缘部分,从边界线的上端以锐角延伸的上部外部和从锐角的边界线的下端延伸的下部外侧,以圆角 角。

    Sequential lateral solidification device
    6.
    发明授权
    Sequential lateral solidification device 有权
    顺序侧固化装置

    公开(公告)号:US07326876B2

    公开(公告)日:2008-02-05

    申请号:US10872478

    申请日:2004-06-22

    申请人: Yun Ho Jung

    发明人: Yun Ho Jung

    IPC分类号: B23K26/00 H01L21/324

    摘要: A sequential lateral solidification device, for enhancing optical characteristics of the device and for preventing damage caused by an ablation of a crystallization thin film, is disclosed. The device includes a laser light source generating a laser beam, a projection lens focusing the laser beam generated from the laser light source onto a substrate, a laser beam splitter between the projection lens and the substrate that passes the laser beam generated from the laser light source to irradiate the substrate and that blocks the laser beam reflected back from the substrate towards the projection lens, and a stage having the substrate mounted thereon.

    摘要翻译: 公开了一种连续的侧向固化装置,用于增强装置的光学特性并防止由于结晶薄膜的烧蚀引起的损坏。 该装置包括产生激光束的激光光源,将从激光光源产生的激光束聚焦在基板上的投影透镜,投影透镜和基板之间的激光分束器,该激光分束器使从激光产生的激光束 源,用于照射基板,并且阻挡从基板反射回投影透镜的激光束,以及安装有基板的台。

    Polysilicon thin film transistor and method of manufacturing the same
    8.
    发明授权
    Polysilicon thin film transistor and method of manufacturing the same 有权
    多晶硅薄膜晶体管及其制造方法

    公开(公告)号:US06475872B1

    公开(公告)日:2002-11-05

    申请号:US09573350

    申请日:2000-05-19

    申请人: Yun Ho Jung

    发明人: Yun Ho Jung

    IPC分类号: H01L2120

    CPC分类号: H01L29/66757 H01L29/78675

    摘要: The present invention discloses a method of manufacturing a thin film transistor for use in a liquid crystal display device in which includes crystallizing an amorphous silicon layer formed over a substrate using a first SLS (sequential lateral solidification) laser annealing technique to form a polysilicon layer; forming sequentially a gate insulating layer and a gate electrode on the polysilicon layer; ion-doping the polysilicon layer using the gate electrode as a mask to form source and drain regions; and activating the gate electrode and the source and drain regions using a second SLS laser annealing technique. The gate electrode comprises an amorphous silicon.

    摘要翻译: 本发明公开了一种制造用于液晶显示装置的薄膜晶体管的方法,其中包括使用第一SLS(顺序侧向固化)激光退火技术使形成在衬底上的非晶硅层结晶以形成多晶硅层; 在多晶硅层上依次形成栅极绝缘层和栅电极; 使用栅极电极作为掩模对多晶硅层进行离子掺杂以形成源极和漏极区域; 以及使用第二SLS激光退火技术激活所述栅电极和所述源漏区。 栅电极包括非晶硅。

    Laser mask and crystallization method using the same
    9.
    发明授权
    Laser mask and crystallization method using the same 有权
    激光掩模和结晶法使用相同

    公开(公告)号:US07816196B2

    公开(公告)日:2010-10-19

    申请号:US12495377

    申请日:2009-06-30

    IPC分类号: H01L21/84

    摘要: An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

    摘要翻译: 激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底,将激光掩模定位在衬底上,激光掩模包括含有透射区域和阻挡区域的掩模图案,照射第一激光束 通过激光掩模的图案在基板的表面上,首先使硅薄膜的预定区域结晶,使激光掩模或其上载置基板的载台沿X轴方向移动,以使用第二结晶 激光掩模,在X轴方向上重复地向基板的端部进行结晶,使激光掩模或载物台沿Y轴方向移动,并且在Y轴方向上反复进行结晶以完成结晶。

    Silicon crystallization apparatus and silicon crystallization method thereof
    10.
    发明授权
    Silicon crystallization apparatus and silicon crystallization method thereof 有权
    硅结晶装置及其硅结晶方法

    公开(公告)号:US07728256B2

    公开(公告)日:2010-06-01

    申请号:US11019353

    申请日:2004-12-23

    IPC分类号: B23K26/02

    摘要: A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization apparatus includes a moving stage being moved in a horizontal direction, and a fixing plate provided in the moving stage, to fix a substrate. A rotating frame is provided in the moving stage, to rotate the fixing plate.

    摘要翻译: 新型硅结晶装置和硅结晶方法使得可以在没有附加光刻的情况下形成对准键,并且通过在衬底被加载时感测衬底的偏差来将衬底调整到正确的位置。 硅结晶装置包括沿水平方向移动的移动台和设置在移动台中的固定板以固定基板。 旋转框架设置在移动台中,以旋转固定板。