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    SEMICONDUCTOR DEVICE FABRICATION MASK AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION MASK AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件制造掩模及其制造方法

    公开(公告)号：US20110053058A1

    公开(公告)日：2011-03-03

    申请号：US12871193

    申请日：2010-08-30

    申请人： Kyo OTSUBO ,  Makiko Katano ,  Haruko Akutsu ,  Ayako Mizuno

    发明人： Kyo OTSUBO ,  Makiko Katano ,  Haruko Akutsu ,  Ayako Mizuno

    IPC分类号： G03F1/00

    CPC分类号： G03F1/58 ,  G03F1/32 ,  G03F1/50 ,  G03F1/54 ,  G03F1/82

    摘要： According to one embodiment, a semiconductor device fabrication mask comprises a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on portions of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern.

    摘要翻译： 根据一个实施例，半导体器件制造掩模包括透光衬底和形成在透光衬底的部分上的半光屏蔽图案和遮光图案，其中含S材料的浓度 在距离透光性基板的露出面1cm，半光屏蔽图案的表面和遮光图案的表面1nm的深度的范围内为0.4％以下。

    Method of manufacture of semiconductor device
    3.
    发明申请
    Method of manufacture of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US20070166977A1

    公开(公告)日：2007-07-19

    申请号：US11644887

    申请日：2006-12-26

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

    摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

    摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。

    Method of manufacture of semiconductor device
    6.
    发明授权
    Method of manufacture of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07557040B2

    公开(公告)日：2009-07-07

    申请号：US11644887

    申请日：2006-12-26

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

    摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

    摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。