-
公开(公告)号：US20120313224A1
公开(公告)日：2012-12-13
申请号：US13157746
申请日：2011-06-10
CPC分类号： H01L21/761 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/32 , H01L29/0619 , H01L29/0646 , H01L29/0657 , H01L29/0661 , H01L29/0692 , H01L29/0834 , H01L29/41741 , H01L29/41766 , H01L29/7395 , H01L2221/68327 , H01L2224/04026 , H01L2224/05008 , H01L2224/05012 , H01L2224/05124 , H01L2224/05548 , H01L2224/05562 , H01L2224/05573 , H01L2224/05644 , H01L2224/26145 , H01L2224/29023 , H01L2224/29024 , H01L2224/291 , H01L2224/32227 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01327 , H01L2924/10156 , H01L2924/10158 , H01L2924/12042 , H01L2924/15747 , H01L2924/351 , H01L2924/3651 , H01L2924/3656 , H01L2924/014 , H01L2224/03 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device and manufacturing method are disclosed which prevent breakage and chipping of a semiconductor chip and improve device characteristics. A separation layer is in a side surface of an element end portion of the chip. An eave portion is formed by a depressed portion in the element end portion. A collector layer on the rear surface of the chip extends to a side wall and bottom surface of the depressed portion, and is connected to the separation layer. A collector electrode is over the whole surface of the collector layer, and is on the side wall of the depressed portion. The thickness of an outermost electrode film is 0.05 μm or less. The collector electrode on the rear surface of the chip is joined onto an insulating substrate via a solder layer, which covers the collector electrode on a flat portion of the rear surface of the semiconductor chip.
摘要翻译： 公开了一种半导体器件和制造方法，其防止半导体芯片的断裂和碎裂，并提高器件特性。 分离层位于芯片的元件端部的侧面。 檐部由元件端部的凹部形成。 芯片后表面上的集电体层延伸到凹陷部分的侧壁和底表面，并连接到分离层。 集电极位于集电极层的整个表面上，并且位于凹陷部分的侧壁上。 最外面的电极膜的厚度为0.05μm以下。 芯片后表面上的集电极通过焊料层接合在绝缘基板上，焊料层覆盖半导体芯片后表面的平坦部分上的集电极。
搜索结果
1 条记录 (耗时 0.015 秒)
