公开(公告)号：US20100207242A1

公开(公告)日：2010-08-19

申请号：US12654803

申请日：2010-01-05

申请人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

发明人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

IPC分类号： H01L29/92 ,  G06F17/50

CPC分类号： H01L23/5223 ,  H01L23/5222 ,  H01L27/0207 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a capacitive element formed by multilayer wirings, wherein a total capacitance, intralayer capacitance and interlayer capacitance are calculated for a plurality of device structures by changing parameters relating to the multilayer wirings in an integrated circuit, a device structure is identified, from among the plurality of device structures, whose difference in the total capacitance between the device structures is equal to or less than a predetermined level and at least either of whose ratio of the intralayer capacitance to the total capacitance or ratio of the interlayer capacitance to the total capacitance satisfies a predetermined condition, and the parameters of the device structure satisfying the predetermined condition are determined as the parameters of the multilayer wirings.

摘要翻译： 本文公开了一种由多层布线形成的电容元件，其中通过改变与集成电路中的多层布线相关的参数，为多个器件结构计算总电容，层间电容和层间电容，从 多个器件结构，其器件结构之间的总电容的差异等于或小于预定电平，并且其内部电容与总电容的比值或层间电容与总电容的比率中的至少一个 满足预定条件，并且将满足预定条件的装置结构的参数确定为多层布线的参数。

公开(公告)号：US10163776B2

公开(公告)日：2018-12-25

申请号：US12654803

申请日：2010-01-05

申请人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

发明人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

IPC分类号： H01L23/522 ,  H01L27/02 ,  H01L49/02

摘要： Disclosed herein is a capacitive element formed by multilayer wirings, wherein a total capacitance, intralayer capacitance and interlayer capacitance are calculated for a plurality of device structures by changing parameters relating to the multilayer wirings in an integrated circuit, a device structure is identified, from among the plurality of device structures, whose difference in the total capacitance between the device structures is equal to or less than a predetermined level and at least either of whose ratio of the intralayer capacitance to the total capacitance or ratio of the interlayer capacitance to the total capacitance satisfies a predetermined condition, and the parameters of the device structure satisfying the predetermined condition are determined as the parameters of the multilayer wirings.

公开(公告)号：US20060186548A1

公开(公告)日：2006-08-24

申请号：US11346890

申请日：2006-02-03

申请人： Yoshiyuki Enomoto ,  Hiroyuki Kawashima ,  Masaki Okamoto

发明人： Yoshiyuki Enomoto ,  Hiroyuki Kawashima ,  Masaki Okamoto

IPC分类号： H01L23/52

CPC分类号： H01L23/53295 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76838 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film. The second-mask forming layer is etched through the fourth mask to thereby form a second mask having the interconnect trench pattern, and the first insulating film that remains under the bottoms of the via holes is removed. Subsequently, the second insulating film is etched through the second mask to thereby form an interconnect trench, and then the second mask is removed.

摘要翻译： 本发明提供一种制造半导体器件和半导体器件的方法，该半导体器件和半导体器件允许在形成双镶嵌结构时使用具有低介电常数的中间层和互连绝缘膜。 第一绝缘膜，第二绝缘膜，第一掩模形成层，第二掩模形成层，第三掩模形成层和第四掩模形成层依次沉积在衬底上。 图案化第四掩模形成层以形成具有互连沟槽图案的第四掩模。 在第四掩模上形成抗蚀剂掩模之后，蚀刻到第二绝缘膜的层以打开通孔。 通过第四掩模蚀刻第三掩模形成层，从而形成具有互连沟槽图案的第三掩模，并且在第一绝缘膜上向下延伸通孔。 通过第四掩模蚀刻第二掩模形成层，从而形成具有互连沟槽图案的第二掩模，并且去除留在通孔底部的第一绝缘膜。 随后，通过第二掩模蚀刻第二绝缘膜，从而形成互连沟槽，然后去除第二掩模。

公开(公告)号：US07041956B2

公开(公告)日：2006-05-09

申请号：US10863654

申请日：2004-06-08

申请人： Shingo Takahashi ,  Yoshiyuki Enomoto ,  Hideshi Abe

发明人： Shingo Takahashi ,  Yoshiyuki Enomoto ,  Hideshi Abe

IPC分类号： H01L27/00

CPC分类号： H01L27/14629 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14656

摘要： A solid-state image pickup device 100 is constructed in which a waveguide 15 is formed in an insulating layer on a light-receiving sensor portion 2, a side wall 161 of the waveguide 15 is covered with a reflective film 17 made of an Al film deposited by a CVD method, an underlayer film 19 is formed between the reflective film 17 and the side wall 161 of the waveguide 15 and the underlayer film 19 is made of a VIb-group element. It is possible to obtain a solid-state image pickup device including a waveguide in which hydrogen supplied to the light-receiving sensor portion 2 can be restrained from being absorbed by the underlayer film 19 and which has the reflective film 17 of high reflectivity with satisfactory surface condition, satisfactory coverage and excellent adhesion.

摘要翻译： 构成了在光接收传感器部分2上的绝缘层中形成波导15的固态图像拾取装置100，波导15的侧壁161被由Al膜制成的反射膜17覆盖 通过CVD法沉积，在反射膜17和波导15的侧壁161之间形成下层膜19，下层膜19由VIb族元素构成。 可以获得包括波导的固态图像拾取装置，其中可以抑制供应到光接收传感器部分2的氢被下层膜19吸收，并且反射率高的反射膜17具有令人满意的 表面状况好，覆盖性好，附着力好。

公开(公告)号：US08243264B2

公开(公告)日：2012-08-14

申请号：US12857874

申请日：2010-08-17

申请人： Hisashi Isozaki ,  Yoshiyuki Enomoto

发明人： Hisashi Isozaki ,  Yoshiyuki Enomoto

IPC分类号： G01N21/00

CPC分类号： G01B11/245 ,  G01B11/25

摘要： A measuring apparatus measuring a surface shape of a target includes a projection optical system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, an optical imaging system to cause the reflected line beam to form an image on a receiving surface of the imaging device to acquire a shape of the line beam on the target, and a splitting mechanism to split the reflected line beam so as to acquire the shape of the line beam on the target at different positions in an extending direction of the line beam and guide the split reflected line beams to the imaging device. A plurality of segments are set on the receiving surface while each segment in which at least one region is set as a reception region is partitioned into a plurality of regions, and the optical imaging system causes the split reflected line beams to form images on the reception regions in the different segments, respectively.

摘要翻译： 测量目标的表面形状的测量装置包括：投射光学系统，用于辐射目标上的线束;成像装置，用于获取从目标物体反射的反射线束;光学成像系统，用于使反射线束形成 获取成像装置的接收面上的图像，以获取目标上的线束的形状，以及分割机构，以分割反射线束，以便获得目标在不同位置上的线束的形状 延伸线束的方向，并将分离的反射线束引导到成像装置。 将多个片段设置在接收表面上，其中将至少一个区域设置为接收区域的每个片段被划分为多个区域，并且光学成像系统使分割的反射线束在接收时形成图像 分别在不同部分的区域。

公开(公告)号：US20110043808A1

公开(公告)日：2011-02-24

申请号：US12857879

申请日：2010-08-17

申请人： Hisashi ISOZAKI ,  Yoshiyuki Enomoto

发明人： Hisashi ISOZAKI ,  Yoshiyuki Enomoto

IPC分类号： G01N21/55

CPC分类号： G01B11/25 ,  G01B11/0608 ,  G01N21/951 ,  G01N21/956

摘要： A measuring apparatus for measuring a surface shape of a target, includes a projection system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, a plurality of imaging systems each configured to cause the reflected line beam to form an image on a receiving surface of the imaging device so that a shape of the line beam on the target is acquired and a splitting mechanism to split the reflected line beam and guide the split reflected line beam to the imaging device. The imaging systems have different optical settings for the object in the target, a plurality of segments are set on the receiving surface while each of the segments in each of which at least one region is set as a reception region is partitioned into a plurality of regions, and the imaging system causes the reflected line beams split by the splitting mechanism to form images on the reception regions in the different segments, respectively.

摘要翻译： 一种用于测量目标的表面形状的测量装置，包括：投影系统，用于辐射目标上的线束;成像装置，用于获取从目标物体反射的反射线束;多个成像系统，每个成像系统被配置为使反射 线束束以在成像装置的接收表面上形成图像，从而获取目标上的线束的形状，以及分离机构，以分离反射线束并将分离的反射线束引导到成像装置。 成像系统对于目标中的对象具有不同的光学设置，在接收表面上设置多个片段，而将每个片段中的至少一个区域设置为接收区域的每个片段被划分为多个区域 并且成像系统使由分割机构分离的反射线束分别在不同段中的接收区域上形成图像。

公开(公告)号：US07038317B2

公开(公告)日：2006-05-02

申请号：US10487440

申请日：2003-07-08

申请人： Yoshiyuki Enomoto ,  Keishi Inoue

发明人： Yoshiyuki Enomoto ,  Keishi Inoue

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76808 ,  H01L23/528 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device which has a wiring structure including a small-width wiring connected to a large-width wiring through a connection hole or holes formed in an inter-layer insulation film and in which reliability of wiring can be enhanced by regulating the number of the connection hole or holes and the location(s) of the connection hole or hole. The semiconductor device includes first wirings (21), (22), an inter-layer insulation film (not shown) covering the first wirings (21), (22), second wirings (31), (33) connected to the first wirings (21), (22) through the connection holes formed in the inter-layer insulation film, the first wirings (21), (22) being formed to be larger in width than the second wirings (31), (33), wherein a plurality of the connection holes (41), (42) and connection holes (43) to (45) are provided, and the plurality of the connection holes (41), (42), (43) to (45) are disposed at intervals between the connection holes (41), (42) and between the connection holes (43) to (45) within the range of from 1 to 18 times the connection hole diameter.

摘要翻译： 公开了一种半导体器件，其具有布线结构，该布线结构包括通过形成在层间绝缘膜中的连接孔或孔连接到大宽度布线的小宽度布线，并且可以通过调节数量来提高布线的可靠性 连接孔或孔的连接孔或孔的位置。 半导体器件包括第一布线（21），（22），覆盖第一布线（21），（22），第二布线（31），（33）的层间绝缘膜（未示出） （21），（22）通过形成在所述层间绝缘膜中的连接孔，所述第一布线（21），（22）的宽度大于所述第二布线（31），（33） 设置多个连接孔（41），（42）和连接孔（43）至（45），并且设置多个连接孔（41），（42），（43）至（45） 在连接孔（41），（42）之间和连接孔（43）至（45）之间的间隔处于连接孔直径的1至18倍的范围内。

公开(公告)号：US20110043825A1

公开(公告)日：2011-02-24

申请号：US12857874

申请日：2010-08-17

申请人： Hisashi ISOZAKI ,  Yoshiyuki Enomoto

发明人： Hisashi ISOZAKI ,  Yoshiyuki Enomoto

IPC分类号： G01B11/24

CPC分类号： G01B11/245 ,  G01B11/25

摘要： A measuring apparatus measuring a surface shape of a target includes a projection optical system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, an optical imaging system to cause the reflected line beam to form an image on a receiving surface of the imaging device to acquire a shape of the line beam on the target, and a splitting mechanism to split the reflected line beam so as to acquire the shape of the line beam on the target at different positions in an extending direction of the line beam and guide the split reflected line beams to the imaging device. A plurality of segments are set on the receiving surface while each segment in which at least one region is set as a reception region is partitioned into a plurality of regions, and the optical imaging system causes the split reflected line beams to form images on the reception regions in the different segments, respectively.

摘要翻译： 测量目标的表面形状的测量装置包括：投影光学系统，用于辐射目标上的线束;成像装置，用于获取从目标物体反射的反射线束;光学成像系统，用于使反射线束形成 获取成像装置的接收面上的图像，以获取目标上的线束的形状，以及分割机构，以分割反射线束，以便获得目标在不同位置上的线束的形状 延伸线束的方向，并将分离的反射线束引导到成像装置。 将多个片段设置在接收表面上，其中将至少一个区域设置为接收区域的每个片段被划分为多个区域，并且光学成像系统使分割的反射线束在接收时形成图像 分别在不同部分的区域。

公开(公告)号：US07642655B2

公开(公告)日：2010-01-05

申请号：US11142560

申请日：2005-06-01

申请人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

发明人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

IPC分类号： H01L23/48

CPC分类号： H01L23/53223 ,  H01L21/02131 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

摘要翻译： 为了形成在含氟的绝缘膜上不会剥离的铝系布线并提高其可靠性，根据本发明的半导体器件包括在基板（11）上形成的含有氟的绝缘膜（14） 形成在含氟的绝缘膜（14）上的钛铝合金膜（17a）和形成在钛铝合金膜（17a）上的铝或铝合金的金属膜（17b）。

公开(公告)号：US20080265353A1

公开(公告)日：2008-10-30

申请号：US12127434

申请日：2008-05-27

申请人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

发明人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

IPC分类号： H01L31/0203

CPC分类号： H01L27/14629 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/14627 ,  H04N5/2254

摘要： A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.

摘要翻译： 一种固态成像装置，具有多个受光部，所述多个光接收部设置在基板中并且响应于入射光而产生电荷;平坦化层，其覆盖设置在所述基板上的规定元件进行平坦化;多个信号线 布置在平坦化层上方的波导和将入射光引导到每个光接收部分的波导，波导穿过多个信号线之间的空间。