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    Three-dimensional (3D) semiconductor memory devices
    1.
    发明授权
    Three-dimensional (3D) semiconductor memory devices 有权

    公开(公告)号：US09978752B2

    公开(公告)日：2018-05-22

    申请号：US15373922

    申请日：2016-12-09

    申请人： Kyoung-Hoon Kim ,  Sangyoun Jo

    发明人： Kyoung-Hoon Kim ,  Sangyoun Jo

    IPC分类号： H01L29/66 ,  H01L27/105 ,  H01L23/528 ,  G11C16/04

    CPC分类号： H01L27/1052 ,  G11C16/0483 ,  H01L23/5283 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

    摘要： A three-dimensional (3D) semiconductor memory device may include a substrate including a cell array region and a connection region, an electrode structure including pluralities of first and second electrodes that are vertically and alternately stacked on a surface of the substrate, extending in a first direction that is parallel to the surface of the substrate, and may include a stair step structure on the connection region, first and second string selection electrodes that extend in the first direction on the electrode structure and spaced apart from each other in a second direction that is parallel to the surface of the substrate and perpendicular to the first direction. The first and second string selection electrodes may each include an electrode portion on the cell array region and a pad portion that extends from the electrode portion in the first direction and on the connection region. Widths in the second direction of the pad portions may be different from widths in the second direction of the respective electrode portions.

    SEMICONDUCTOR MEMORY DEVICES HAVING VERTICAL PILLARS THAT ARE ELECTRICALLY CONNECTED TO LOWER CONTACTS
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES HAVING VERTICAL PILLARS THAT ARE ELECTRICALLY CONNECTED TO LOWER CONTACTS 审中-公开

    公开(公告)号：US20180026049A1

    公开(公告)日：2018-01-25

    申请号：US15706861

    申请日：2017-09-18

    申请人： TaeHee Lee ,  Kyoung-Hoon Kim ,  Hongsoo Kim

    发明人： TaeHee Lee ,  Kyoung-Hoon Kim ,  Hongsoo Kim

    IPC分类号： H01L27/11582

    CPC分类号： H01L27/11582 ,  H01L28/00

    摘要： A semiconductor memory device may include an electrode structure including a selection line on a substrate and word lines between the substrate and the selection line, vertical pillars penetrating the electrode structure and being connected to the substrate, sub-interconnections and bit lines sequentially stacked on and electrically connected to the vertical pillars, and lower contacts connecting the vertical pillars to the sub-interconnections. The selection line may include a plurality of selection lines separated from each other in a first direction by an insulating separation layer, and central axes of the lower contacts connected in common to one of the sub-interconnections may be shifted, in a second direction across the first direction and parallel to a top surface of the substrate, from central axes of the vertical pillars thereunder.

    Nonvolatile memory devices
    8.
    发明申请
    Nonvolatile memory devices 有权
    非易失性存储器件

    公开(公告)号：US20100258947A1

    公开(公告)日：2010-10-14

    申请号：US12798525

    申请日：2010-04-06

    申请人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Hoosung Cho ,  Kyoung-Hoon Kim

    发明人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Hoosung Cho ,  Kyoung-Hoon Kim

    IPC分类号： H01L27/115 ,  H01L23/522

    CPC分类号： H01L27/11578 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11565 ,  H01L27/11582

    摘要： Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

    摘要翻译： 具有三维结构的非易失性存储装置。 非易失性存储器件可以包括具有三维布置在半导体衬底上的线形状的多个导电图案的单元阵列，单元阵列彼此分离; 从半导体衬底延伸到导电图案的横截面的半导体图案; 在所述半导体图案的下部设置在所述半导体衬底中的在所述导电图案延伸的方向上的公共源极区; 设置在所述半导体衬底中的第一杂质区域，使得所述第一杂质区域沿与所述导电图案交叉的方向延伸以电连接所述公共源极区域; 以及在分离的电池阵列之间暴露第一杂质区域的一部分的第一接触孔。

    Method for transmitting short message using internet phones and system therefor
    9.
    发明授权
    Method for transmitting short message using internet phones and system therefor 有权
    使用互联网电话发送短信的方法及其系统

    公开(公告)号：US07450562B2

    公开(公告)日：2008-11-11

    申请号：US10087777

    申请日：2002-03-05

    申请人： Bon-Seuk Goo ,  Kyoung-Hoon Kim

    发明人： Bon-Seuk Goo ,  Kyoung-Hoon Kim

    IPC分类号： H04L12/66 ,  H04Q7/00 ,  H04M1/64 ,  G06F15/16

    CPC分类号： H04M7/006 ,  H04L29/06027 ,  H04L51/04 ,  H04L51/38 ,  H04L65/1009 ,  H04M1/2478 ,  H04M1/2535 ,  H04M3/5322 ,  H04W4/14

    摘要： A method and system for transmitting a short message to a called party's Internet phone use an Internet phone according to the H.323 multimedia communication protocol. The invention provides a message transmission system between a short message transmission server and a gatekeeper. The gatekeeper controls setup of a call and user registration or cancellation in the Internet phone. The Internet phone is optionally connected to the gatekeeper, and has a short message transmission module for transmitting, via a predetermined port, the short message including information corresponding to a telephone number of the called party's Internet phone. The short message transmission server serves as an H.323 terminal registered in the gatekeeper, and is constructed to transmit, to the gatekeeper, the information relating to the called party's Internet phone incorporated in the corresponding short message so as to obtain an Internet protocol (IP) address of the called party's Internet phone, and to transmit the short message to the IP address of the called party's Internet phone. The invention allows a user of the Internet phone to transmit the SMS message to the called party's Internet phone using the registration admission and status (RAS) protocol of the H.323 multimedia communication protocol.

    摘要翻译： 根据H.323多媒体通信协议，用于向被叫方的因特网电话发送短消息的方法和系统使用因特网电话。 本发明提供了一种在短消息传输服务器和网守之间的消息传输系统。 网守控制在网络电话中的呼叫建立和用户注册或取消。 互联网电话可选地连接到网守，并且具有短消息传输模块，用于经由预定端口发送包括与被叫方的因特网电话的电话号码相对应的信息的短消息。 短消息传输服务器用作注册在网守中的H.323终端，并被构造为向网守发送与被合并的互联网电话相关的信息，该信息包含在相应的短消息中，以便获得因特网协议（ IP）地址，并将短消息发送到被叫方的互联网电话的IP地址。 本发明允许因特网电话的用户使用H.323多媒体通信协议的注册许可和状态（RAS）协议将SMS消息发送到被叫方的因特网电话。