公开(公告)号：US08264883B2

公开(公告)日：2012-09-11

申请号：US12765230

申请日：2010-04-22

申请人： Kyu Hee Lim ,  Seung Ho Chang ,  Seong Je Park

发明人： Kyu Hee Lim ,  Seung Ho Chang ,  Seong Je Park

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C7/10 ,  G11C7/00

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5634 ,  G11C2211/5642

摘要： A semiconductor memory device includes a memory cell array including an even page cell group and an odd page cell group, and a page buffer configured to read data stored in memory cells of the even page cell group and the odd page cell group and store the read data. The page buffer comprises a first latch configured to store first even page data of the even page cell group when a first read operation is performed, a second latch configured to store odd page data of the odd page cell group when a second read operation is performed, and a third latch configured to store second even page data of the even page cell group when a third read operation is performed.

摘要翻译： 一种半导体存储器件包括一个包括偶数页单元组和奇数页单元组的存储单元阵列，以及一个页缓冲器，被配置为读取存储在偶页单元组和奇数页单元组的存储单元中的数据，并存储读 数据。 页面缓冲器包括第一锁存器，其被配置为当执行第一读取操作时存储偶数页单元组的第一偶数页数据;第二锁存器，被配置为当执行第二读取操作时存储奇数页单元组的奇数页数据 以及第三锁存器，被配置为当执行第三读取操作时存储偶数页单元组的第二偶数页数据。

公开(公告)号：US20100329014A1

公开(公告)日：2010-12-30

申请号：US12765230

申请日：2010-04-22

申请人： Kyu Hee LIM ,  Seung Ho Chang ,  Seong Je Park

发明人： Kyu Hee LIM ,  Seung Ho Chang ,  Seong Je Park

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5634 ,  G11C2211/5642

摘要： A semiconductor memory device includes a memory cell array including an even page cell group and an odd page cell group, and a page buffer configured to read data stored in memory cells of the even page cell group and the odd page cell group and store the read data. The page buffer comprises a first latch configured to store first even page data of the even page cell group when a first read operation is performed, a second latch configured to store odd page data of the odd page cell group when a second read operation is performed, and a third latch configured to store second even page data of the even page cell group when a third read operation is performed.

摘要翻译： 一种半导体存储器件包括一个包括偶数页单元组和奇数页单元组的存储单元阵列，以及一个页缓冲器，被配置为读取存储在偶页单元组和奇数页单元组的存储单元中的数据，并存储读 数据。 页面缓冲器包括第一锁存器，其被配置为当执行第一读取操作时存储偶数页单元组的第一偶数页数据;第二锁存器，被配置为当执行第二读取操作时存储奇数页单元组的奇数页数据 以及第三锁存器，被配置为当执行第三读取操作时存储偶数页单元组的第二偶数页数据。

公开(公告)号：US20080123429A1

公开(公告)日：2008-05-29

申请号：US12025925

申请日：2008-02-05

申请人： Seong Je PARK ,  Seung Ho Chang

发明人： Seong Je PARK ,  Seung Ho Chang

IPC分类号： G11C16/06

CPC分类号： G11C16/12 ,  G11C16/3454 ,  G11C16/3459

摘要： The present invention relates to a method of programming a flash memory device. According to the present invention, after a program operation is completed, a program verify operation is repeatedly performed, wherein a threshold voltage of a programmed memory cell is also detected. If there are memory cells whose threshold voltage becomes low as a result of the detection, the program operation is again performed on a corresponding memory cell. It is thus possible to obtain a uniform distribution characteristic of a threshold voltage. Furthermore, a program verify operation is performed with a compare voltage being set higher than a target voltage initially so that a threshold voltage of a memory cell is sufficiently higher than the target voltage. The program verify operation is again performed while lowering the compare voltage according to the repetition number. It is thus possible to prevent normally programmed cells from being again excessively programmed.

摘要翻译： 本发明涉及一种编程闪速存储器件的方法。 根据本发明，在程序操作完成之后，重复执行程序验证操作，其中也检测到编程的存储器单元的阈值电压。 如果存在作为检测结果的阈值电压变低的存储单元，则对相应的存储单元再次执行编程操作。 因此可以获得阈值电压的均匀分布特性。 此外，在比较电压被初始设定为高于目标电压的情况下执行编程验证操作，使得存储单元的阈值电压足够高于目标电压。 再次执行程序验证操作，同时根据重复次数降低比较电压。 因此可以防止正常编程的单元格再次过度编程。

公开(公告)号：US07379342B2

公开(公告)日：2008-05-27

申请号：US11304433

申请日：2005-12-14

申请人： Seong Je Park ,  Seung Ho Chang

发明人： Seong Je Park ,  Seung Ho Chang

IPC分类号： G11C11/34

CPC分类号： G11C16/12 ,  G11C16/3454 ,  G11C16/3459

摘要： A program operation and a program verification operation are repeatedly performed. The program verification operation is performed on memory cells including pass cells to obtain a uniform distribution characteristic of a threshold voltage. Furthermore, the program verification operation is performed with a compare voltage being set higher than a target voltage initially so that a threshold voltage of a memory cell is sufficiently higher than the target voltage. The program verification operation is again performed lowering the compare voltage according to the repetition number. Thus, normally programmed cells are prevented from being again excessively programmed.

摘要翻译： 重复执行程序操作和程序验证操作。 在包括通过单元的存储单元上执行程序验证操作，以获得阈值电压的均匀分布特性。 此外，程序验证操作以比初始设定为高于目标电压的比较电压进行，使得存储单元的阈值电压足够高于目标电压。 程序验证操作再次根据重复次数降低比较电压。 因此，防止正常编程的单元被过度编程。

公开(公告)号：US08243163B2

公开(公告)日：2012-08-14

申请号：US12660032

申请日：2010-02-19

申请人： Seung Ho Chang

发明人： Seung Ho Chang

IPC分类号： H04N9/73 ,  H04N1/46

CPC分类号： H04N9/735

摘要： Techniques, systems and apparatus are described for adjusting auto white balance (AWB). An AWB adjusting device includes a map setting unit to perform map-setting on a number of light-source boxes that is at least M times greater than a number of registers by performing map-switching. M is an integer greater than or equal to 2. The AWB adjusting device includes a pixel counting unit for counting a number of white pixels of a standard image contained in each light-source box with map-setting. The AWB adjusting device includes a light-source selection unit to select a light source based on a maximum light-source box selected from the number of light-source boxes having a greatest number of the white pixels. The AWB adjusting device includes a balance gain applying unit to calculate a red gain and a blue gain based on a mapping value of the maximum light-source box to adjust AWB.

摘要翻译： 描述了用于调整自动白平衡（AWB）的技术，系统和装置。 AWB调整装置包括地图设置单元，用于通过进行地图切换，对多个光源盒进行映射设置，该数量至少比寄存器数量多M倍。 M是大于或等于2的整数。AWB调整装置包括：像素计数单元，用于利用地图设置对包含在每个光源盒中的标准图像的数量的白色像素进行计数。 AWB调节装置包括：光源选择单元，用于基于从具有最多数量的白色像素的光源盒的数量中选择的最大光源盒来选择光源。 AWB调整装置包括平衡增益施加单元，用于基于最大光源盒的映射值来计算红色增益和蓝色增益以调整AWB。

公开(公告)号：US06961266B2

公开(公告)日：2005-11-01

申请号：US10891021

申请日：2004-07-15

申请人： Seung Ho Chang

发明人： Seung Ho Chang

IPC分类号： G11C16/02 ,  G11C11/56 ,  G11C16/06 ,  G11C16/26 ,  G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5621 ,  G11C11/5642

摘要： A method of programming a multi-level flash memory using a sensing circuit according to the present invention performs an automatic verification program method of performing verification while performing a program. The method can reduce the power consumption by detecting a program data stored at a register to stop an operation of the sensing circuit for memory cells for which the program is completed. Also, a method of reading the flash memory senses the state of the threshold voltage of a cell using the sense amplifier used in the program operation while increasing or lowering the voltage applied to a control gate step-by-step and then stores the level value generated in a counter at the registers depending on its state, wherein an operation of the sensing circuit for the memory cells for which the program is completed is stopped. Therefore, the present invention can reduce the power consumption and allow a multi-level read to be implemented on an actual array with a simple sense amplifier structure step-by-step. In addition, the present invention can reduce the power consumption while simplifying the circuit construction by allowing a program/read operation to be simultaneously implemented on a single sense amplifier circuit.

公开(公告)号：US06836431B2

公开(公告)日：2004-12-28

申请号：US10006096

申请日：2001-12-10

申请人： Seung Ho Chang

发明人： Seung Ho Chang

IPC分类号： G11C1604

CPC分类号： G11C11/5628 ,  G11C11/5621 ,  G11C11/5642

摘要： A method of programming a multi-level flash memory using a sensing circuit according to the present invention performs an automatic verification program method of performing verification while performing a program. The method can reduce the power consumption by detecting a program data stored at a register to stop an operation of the sensing circuit for memory cells for which the program is completed. Also, a method of reading the flash memory senses the state of the threshold voltage of a cell using the sense amplifier used in the program operation while increasing or lowering the voltage applied to a control gate step-by-step and then stores the level value generated in a counter at the registers depending on its state, wherein an operation of the sensing circuit for the memory cells for which the program is completed is stopped. Therefore, the present invention can reduce the power consumption and allow a multi-level read to be implemented on an actual array with a simple sense amplifier structure step-by-step. In addition, the present invention can reduce the power consumption while simplifying the circuit construction by allowing a program/read operation to be simultaneously implemented on a single sense amplifier circuit.

摘要翻译： 使用根据本发明的感测电路编程多电平闪存的方法执行执行程序时执行验证的自动验证程序方法。 该方法可以通过检测存储在寄存器中的程序数据来停止对程序完成的存储单元的感测电路的操作来降低功耗。 此外，读取闪速存储器的方法使用在程序操作中使用的读出放大器逐个增加或降低施加到控制门的电压来感测单元的阈值电压的状态，然后存储电平值 根据其状态在寄存器的计数器中产生，其中停止完成该程序的存储单元的感测电路的操作。 因此，本发明可以降低功耗并且允许以简单的读出放大器结构逐步实现在实际阵列上的多级读取。 此外，本发明可以通过允许在单个读出放大器电路上同时实现编程/读取操作来简化电路结构来降低功耗。

公开(公告)号：US07872918B2

公开(公告)日：2011-01-18

申请号：US12493288

申请日：2009-06-29

申请人： Chae Kyu Jang ,  Seung Ho Chang ,  Young Soo Park ,  Jae Yun Kim ,  Se Chun Park

发明人： Chae Kyu Jang ,  Seung Ho Chang ,  Young Soo Park ,  Jae Yun Kim ,  Se Chun Park

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C16/14 ,  G11C16/28 ,  G11C16/30

摘要： A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.

摘要翻译： 非易失性存储器件包括：比较单元，被配置为比较采样存储单元串的多个节点的参考电压和电压;状态存储单元，被配置为根据相应的比较来存储每个存储器单元的状态信息 比较单元的结果，以及被配置为根据存储在状态存储单元中的数据来改变程序开始电压的高电压生成单元。

公开(公告)号：US20100214435A1

公开(公告)日：2010-08-26

申请号：US12660032

申请日：2010-02-19

申请人： Seung Ho Chang

发明人： Seung Ho Chang

IPC分类号： H04N9/73

CPC分类号： H04N9/735

摘要： Techniques, systems and apparatus are described for adjusting auto white balance (AWB). An AWB adjusting device includes a map setting unit to perform map-setting on a number of light-source boxes that is at least M times greater than a number of registers by performing map-switching. M is an integer greater than or equal to 2. The AWB adjusting device includes a pixel counting unit for counting a number of white pixels of a standard image contained in each light-source box with map-setting. The AWB adjusting device includes a light-source selection unit to select a light source based on a maximum light-source box selected from the number of light-source boxes having a greatest number of the white pixels. The AWB adjusting device includes a balance gain applying unit to calculate a red gain and a blue gain based on a mapping value of the maximum light-source box to adjust AWB.

摘要翻译： 描述了用于调整自动白平衡（AWB）的技术，系统和装置。 AWB调整装置包括地图设置单元，用于通过进行地图切换，对多个光源盒进行映射设置，该数量至少比寄存器数量M多M倍。 M是大于或等于2的整数。AWB调整装置包括：像素计数单元，用于利用地图设置对包含在每个光源盒中的标准图像的数量的白色像素进行计数。 AWB调节装置包括：光源选择单元，用于基于从具有最多数量的白色像素的光源盒的数量中选择的最大光源盒来选择光源。 AWB调整装置包括平衡增益施加单元，用于基于最大光源盒的映射值来计算红色增益和蓝色增益以调整AWB。

公开(公告)号：US20100008137A1

公开(公告)日：2010-01-14

申请号：US12493288

申请日：2009-06-29

申请人： Chae Kyu Jang ,  Seung Ho Chang ,  Young Soo Park ,  Jae Yun Kim ,  Se Chun Park

发明人： Chae Kyu Jang ,  Seung Ho Chang ,  Young Soo Park ,  Jae Yun Kim ,  Se Chun Park

IPC分类号： G11C16/06 ,  G11C16/04 ,  G11C7/06

CPC分类号： G11C16/10 ,  G11C16/14 ,  G11C16/28 ,  G11C16/30

摘要： A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.

摘要翻译： 非易失性存储器件包括：比较单元，被配置为比较采样存储单元串的多个节点的参考电压和电压;状态存储单元，被配置为根据相应的比较来存储每个存储器单元的状态信息 比较单元的结果，以及被配置为根据存储在状态存储单元中的数据来改变程序开始电压的高电压生成单元。