Transformer having the heat radiation function
    4.
    发明授权
    Transformer having the heat radiation function 失效
    具有放热功能的变压器

    公开(公告)号:US08493167B2

    公开(公告)日:2013-07-23

    申请号:US12981066

    申请日:2010-12-29

    IPC分类号: H01F27/08

    CPC分类号: H01F27/085

    摘要: Disclosed herein is a transformer having a heat radiation function. The transformer includes a pair of cores having an E-shape and facing and contacting each other to form central pillars and outer peripheral parts, a transforming coil part wound on the central pillars of the pair of cores and dropping voltage, and a heat radiation pipe formed to have a cylindrical shape and positioned inward from the transforming coil part to radiate heat generated from the transforming coil part, thereby well discharging heat generated from the coil.

    摘要翻译: 这里公开了具有散热功能的变压器。 变压器包括一对具有E形并且彼此面对并相互接触以形成中心柱和外围部分的一对铁芯,缠绕在一对铁芯的中心柱上的变压线圈部分和降压电压,以及散热管 形成为具有圆筒形状并且位于从变压线圈部向内的位置,以辐射由变压线圈部产生的热量,从而充分地排出线圈产生的热量。

    TRANSFORMER HAVING THE HEAT RADIATION FUNCTION
    5.
    发明申请
    TRANSFORMER HAVING THE HEAT RADIATION FUNCTION 失效
    具有热辐射功能的变压器

    公开(公告)号:US20120105186A1

    公开(公告)日:2012-05-03

    申请号:US12981066

    申请日:2010-12-29

    IPC分类号: H01F27/08

    CPC分类号: H01F27/085

    摘要: Disclosed herein is a transformer having a heat radiation function. The transformer includes a pair of cores having an E-shape and facing and contacting each other to form central pillars and outer peripheral parts, a transforming coil part wound on the central pillars of the pair of cores and dropping voltage, and a heat radiation pipe formed to have a cylindrical shape and positioned inward from the transforming coil part to radiate heat generated from the transforming coil part, thereby well discharging heat generated from the coil.

    摘要翻译: 这里公开了具有散热功能的变压器。 变压器包括一对具有E形并且彼此面对并相互接触以形成中心柱和外围部分的一对铁芯,缠绕在一对铁芯的中心柱上的变压线圈部分和降压电压,以及散热管 形成为具有圆筒形状并且位于从变压线圈部向内的位置,以辐射由变压线圈部产生的热量,从而充分地排出线圈产生的热量。

    HEAT DISSIPATION SYSTEM FOR POWER MODULE
    6.
    发明申请
    HEAT DISSIPATION SYSTEM FOR POWER MODULE 有权
    电源模块散热系统

    公开(公告)号:US20130343001A1

    公开(公告)日:2013-12-26

    申请号:US13588734

    申请日:2012-08-17

    IPC分类号: F28D15/00 H05K7/20

    摘要: Disclosed herein is a heat dissipation system for a power module, the heat dissipation system including: first and second heat dissipation plates spaced apart from each other while facing each other, to form a cooling medium flow passage; first and second inflow lines extended to the cooling medium flow passage of the first and second heat dissipation plates, to transfer cooling media flowing therein at different flow rates or different fluxes to the cooling medium flow passage; and first and second inlets respectively connected with the first and second inflow lines to allow the cooling media to flow therein.

    摘要翻译: 本发明公开了一种用于功率模块的散热系统,该散热系统包括:彼此相对隔开的第一和第二散热板,形成冷却介质流动通道; 第一和第二流入管线延伸到第一和第二散热板的冷却介质流动通道,以将流过其中的不同流量或不同通量的冷却介质转移到冷却介质流动通道; 以及分别与第一和第二流入管线连接的第一和第二入口,以允许冷却介质流入其中。

    Heat dissipation system for power module
    7.
    发明授权
    Heat dissipation system for power module 有权
    电源模块散热系统

    公开(公告)号:US08897011B2

    公开(公告)日:2014-11-25

    申请号:US13588734

    申请日:2012-08-17

    IPC分类号: H05K7/20

    摘要: Disclosed herein is a heat dissipation system for a power module, the heat dissipation system including: first and second heat dissipation plates spaced apart from each other while facing each other, to form a cooling medium flow passage; first and second inflow lines extended to the cooling medium flow passage of the first and second heat dissipation plates, to transfer cooling media flowing therein at different flow rates or different fluxes to the cooling medium flow passage; and first and second inlets respectively connected with the first and second inflow lines to allow the cooling media to flow therein.

    摘要翻译: 本发明公开了一种用于功率模块的散热系统,该散热系统包括:彼此相对隔开的第一和第二散热板,形成冷却介质流动通道; 第一和第二流入管线延伸到第一和第二散热板的冷却介质流动通道,以将流过其中的不同流量或不同通量的冷却介质转移到冷却介质流动通道; 以及分别与第一和第二流入管线连接的第一和第二入口,以允许冷却介质流入其中。

    Semiconductor device and method for manufacturing the same
    8.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08809177B2

    公开(公告)日:2014-08-19

    申请号:US13599453

    申请日:2012-08-30

    申请人: Jong Man Kim

    发明人: Jong Man Kim

    IPC分类号: H01L29/788 H01L21/78

    摘要: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a gate pattern formed by patterning a tunnel insulating layer, a conductive film for a floating gate, a dielectric film, a conductive film for a control gate, and a gate metal film sequentially formed on a semiconductor substrate; a first barrier film formed on side walls of the gate metal film; and a second barrier film formed on an upper surface of the gate metal film.

    摘要翻译: 提供半导体器件及其制造方法。 半导体器件包括通过图案化隧道绝缘层,用于浮置栅极的导电膜,电介质膜,用于控制栅极的导电膜和顺序形成在半导体衬底上的栅极金属膜形成的栅极图案; 形成在栅极金属膜的侧壁上的第一阻挡膜; 以及形成在所述栅极金属膜的上表面上的第二阻挡膜。

    Manufacturing method of image sensor of vertical type
    9.
    发明授权
    Manufacturing method of image sensor of vertical type 失效
    垂直型图像传感器的制造方法

    公开(公告)号:US07883913B2

    公开(公告)日:2011-02-08

    申请号:US12638121

    申请日:2009-12-15

    申请人: Jong Man Kim

    发明人: Jong Man Kim

    IPC分类号: H01L21/00

    摘要: A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a second substrate having an image sensing unit over the insulation layer; forming a trench in the second substrate to divide the image sensing unit for each pixel; forming a PTI by gap-filling the trench with insulating material; forming a first material layer over the PTI, the image sensing unit, and the insulation layer; and forming a second material layer over the first material layer and performing a deuterium annealing process thereon. The crystal defects of the substrate generated when performing the trench etching on the donor substrate to define unit pixels are cured by performing the deuterium annealing process, making it possible to improve the sensitivity and illumination characteristics of the image sensor of vertical type.

    摘要翻译: 提供垂直型图像传感器的制造方法,其包括:在第一基板上形成具有金属布线的绝缘层和接触插塞; 将具有图像感测单元的第二基板结合在所述绝缘层上; 在所述第二基板中形成沟槽,以分割每个像素的图像感测单元; 通过用绝缘材料间隙填充沟槽来形成PTI; 在PTI,图像感测单元和绝缘层上形成第一材料层; 以及在所述第一材料层上形成第二材料层并在其上进行氘退火处理。 通过执行氘退火处理来使通过施主衬底进行沟槽蚀刻而形成单位像素而产生的衬底的晶体缺陷被固化,从而可以提高垂直型图像传感器的灵敏度和照明特性。