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22 条记录 (耗时 0.034 秒)

    Method of controlling operation of flash memory device
    6.
    发明授权
    Method of controlling operation of flash memory device 有权
    控制闪存设备运行的方法

    公开(公告)号：US08004896B2

    公开(公告)日：2011-08-23

    申请号：US12493604

    申请日：2009-06-29

    申请人： Seok Jin Joo

    发明人： Seok Jin Joo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/26 ,  G11C11/5621 ,  G11C16/349 ,  G11C16/3495

    摘要： According to a method of controlling the operation of a flash memory device including a number of memory blocks, a memory block of the memory blocks is first selected as a reference block. A program operation is performed on a memory cell included in the reference block. In order to check an operating characteristic of the reference block, a threshold voltage level of the programmed memory cell is read. Parameters for performing an operation of the flash memory device are determined based on the operating characteristic of the reference block. The parameters are stored in the reference block.

    摘要翻译： 根据控制包括多个存储器块的闪速存储器件的操作的方法，首先选择存储器块的存储器块作为参考块。 对包括在参考块中的存储单元执行编程操作。 为了检查参考块的工作特性，读取编程的存储器单元的阈值电压电平。 基于参考块的操作特性来确定用于执行闪存设备的操作的参数。 参数存储在参考块中。

    Read method of memory device
    7.
    发明授权
    Read method of memory device 有权
    读存储器件的方法

    公开(公告)号：US07518913B2

    公开(公告)日：2009-04-14

    申请号：US11771963

    申请日：2007-06-29

    申请人： Jong Hyun Wang ,  Jun Seop Chung ,  Seok Jin Joo

    发明人： Jong Hyun Wang ,  Jun Seop Chung ,  Seok Jin Joo

    IPC分类号： G11C11/34

    CPC分类号： G11C16/28 ,  G06F11/1072 ,  G11C11/5642 ,  G11C29/00

    摘要： A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a Nth (N≧3, N is an integer) read command.

    摘要翻译： 包括MLC的存储器件的读取方法包括以下步骤：根据第一读取命令执行数据读取操作; 确定读取数据的纠错是否可行; 如果作为确定的结果，难以进行纠错，则根据第二读取命令执行数据读取操作; 根据第二读取命令确定读取数据的纠错是否可行; 并且如果作为确定的结果，难以进行纠错，则根据Nth（N> = 3，N是整数）读取命令执行数据读取操作。

    Flash memory device and method of erasing the same
    8.
    发明授权
    Flash memory device and method of erasing the same 失效
    闪存设备及其擦除方法

    公开(公告)号：US06504765B1

    公开(公告)日：2003-01-07

    申请号：US10026940

    申请日：2001-12-27

    申请人： Seok Jin Joo

    发明人： Seok Jin Joo

    IPC分类号： G11C1604

    CPC分类号： G11C16/3477 ,  G11C16/16 ,  G11C16/3468

    摘要： The present invention relates to a flash memory device. The present invention relates to a flash memory device in which a capacitor of a given capacitance is connected between a bit line connected to a drain region and a ground line within a flash cell array, and method of erasing the same. Therefore, the present invention can reduce the time and power consumption in the cell erase operation, by accelerating an increase of hot carriers generated in a diode reverse-bias state between the drain region and a semiconductor substrate upon an erase operation of the cell to prevent over-erase or non-erase of the cell by means of hot carriers and by thus solving an over-erase problem of the cell without requiring additional pre-programming and verification operation and additional post-programming and verification operation.

    摘要翻译： 本发明涉及一种闪存装置。 本发明涉及一种闪速存储器件，其中给定电容的电容器连接在与漏极区域连接的位线和闪存单元阵列内的接地线之间，以及擦除该闪速存储器件的方法。 因此，通过在电池的擦除操作时加速在漏极区域和半导体衬底之间的二极管反向偏置状态下产生的热载流子的增加，本发明可以减少电池擦除操作中的时间和功耗，以防止 通过热载体对单元进行过擦除或不擦除，并且因此解决单元的过度擦除问题，而不需要额外的预编程和验证操作以及额外的后编程和验证操作。

    Semiconductor memory device and method of programming the same
    9.
    发明授权
    Semiconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US08891311B2

    公开(公告)日：2014-11-18

    申请号：US13306047

    申请日：2011-11-29

    申请人： Seok Jin Joo

    发明人： Seok Jin Joo

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C11/56

    CPC分类号： G11C11/5628 ,  G11C16/0483

    摘要： A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells.

    摘要翻译： 半导体存储器件的编程方法包括对所选择的页的目标LSB程序单元执行最低有效位（LSB）编程操作，在执行所选择的页之前增加所选页的目标最高有效位（MSB）程序单元的阈值电压 用于目标MSB程序单元的MSB操作，并且在目标MSB程序单元的阈值电压增加之后对目标MSB程序单元执行MSB程序操作。

    Nonvolatile memory device having a copy back operation and method of operating the same
    10.
    发明授权
    Nonvolatile memory device having a copy back operation and method of operating the same 有权
    具有复印操作的非易失性存储器件及其操作方法

    公开(公告)号：US08595593B2

    公开(公告)日：2013-11-26

    申请号：US12606713

    申请日：2009-10-27

    申请人： Seok Jin Joo

    发明人： Seok Jin Joo

    IPC分类号： G06F11/00

    CPC分类号： G06F11/1048 ,  G06F12/0246 ,  G06F2212/7209

    摘要： A method of operating a nonvolatile memory device comprises performing a read operation to read data stored in a first memory cell block including first unit groups; detecting a second unit group from among the first unit groups, the second unit group having a number of error bits included in the read data, which is greater than a set number of bits and equal to or smaller than a maximum allowable number of bits which can be corrected through an error checking and correction (ECC) processing; and after the second unit group is detected, performing a copyback operation for moving the data, that are stored in the first memory cell block, to a second memory cell block.

    摘要翻译： 一种操作非易失性存储器件的方法包括执行读取操作以读取存储在包括第一单元组的第一存储单元块中的数据; 从所述第一单位组中检测出第二单位组，所述第二单位组具有包括在所述读取数据中的错误位数，所述第二单位组大于设定的位数，并且等于或小于最大可允许的位数 可以通过错误检查和校正（ECC）处理来校正; 并且在检测到第二单元组之后，执行用于将存储在第一存储单元块中的数据移动到第二存储器单元块的回拷动作。