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1.发明授权Oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices 有权氧化促进组合物，形成氧化物层的方法，以及制造半导体器件的方法公开(公告)号：US08697583B2
公开(公告)日：2014-04-15
申请号：US13224737
申请日：2011-09-02
申请人： Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
发明人： Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/76224
摘要： Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.
摘要翻译： 根据本发明的实施方案提供的是氧化促进组合物，形成氧化物层的方法和制造半导体器件的方法。 在本发明的一些实施方案中，氧化促进组合物包括具有AML结构的氧化促进剂，其中L是化学吸附在硅表面，氧化硅，氮化硅或金属上的官能团，A是 一种可热分解的氧化官能团，M是允许A和L彼此共价结合的部分。
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2.发明申请OXIDATION-PROMOTING COMPOSITIONS, METHODS OF FORMING OXIDE LAYERS, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES 有权氧化促进组合物，形成氧化物层的方法和制备半导体器件的方法公开(公告)号：US20120058647A1
公开(公告)日：2012-03-08
申请号：US13224737
申请日：2011-09-02
申请人： Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
发明人： Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/76224
摘要： Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.
摘要翻译： 根据本发明的实施方案提供的是氧化促进组合物，形成氧化物层的方法和制造半导体器件的方法。 在本发明的一些实施方案中，氧化促进组合物包括具有AML结构的氧化促进剂，其中L是化学吸附在硅表面，氧化硅，氮化硅或金属上的官能团，A是 一种可热分解的氧化官能团，M是允许A和L彼此共价结合的部分。
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3.发明授权Semiconductor devices including 3-D structures with support pad structures and related methods and systems 有权包括具有支撑垫结构的3-D结构以及相关方法和系统的半导体器件公开(公告)号：US08624354B2
公开(公告)日：2014-01-07
申请号：US12829864
申请日：2010-07-02
申请人： Shin-hye Kim , Kyung-mun Byun , Hong-rae Kim , Gil-heyun Choi , Eun-kee Hong
发明人： Shin-hye Kim , Kyung-mun Byun , Hong-rae Kim , Gil-heyun Choi , Eun-kee Hong
IPC分类号： H01L21/02
CPC分类号： H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A semiconductor device may include a semiconductor substrate and a plurality of three-dimensional capacitors on the semiconductor substrate. Each of the plurality of three-dimensional capacitors may include a first three-dimensional electrode, a capacitor dielectric layer, and a second three-dimensional electrode with the first three-dimensional electrode between the capacitor dielectric layer and the semiconductor substrate and with the capacitor dielectric layer between the first and second three-dimensional electrodes. A plurality of capacitor support pads may be provided with each capacitor support pad being arranged between adjacent first three-dimensional electrodes of adjacent three-dimensional capacitors with portions of the capacitor dielectric layers between the capacitor support pads and the semiconductor substrate. Related methods and apparatuses are also discussed.
摘要翻译： 半导体器件可以包括半导体衬底和半导体衬底上的多个三维电容器。 多个三维电容器中的每一个可以包括第一三维电极，电容器电介质层和第二三维电极，其中在电容器介电层和半导体衬底之间具有第一三维电极，并且与电容器 第一和第二三维电极之间的介电层。 可以设置多个电容器支撑焊盘，每个电容器支撑焊盘布置在相邻的三维电容器的相邻的第一三维电极之间，其中电容器电介质层的一部分在电容器支撑焊盘和半导体衬底之间。 还讨论了相关的方法和装置。
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4.发明申请SEMICONDUCTOR DEVICES INCLUDING 3-D STRUCTURES WITH SUPPORT PAD STRUCTURES AND RELATED METHODS AND SYSTEMS 有权包括支持PAD结构的三维结构的半导体器件及相关方法和系统公开(公告)号：US20110115051A1
公开(公告)日：2011-05-19
申请号：US12829864
申请日：2010-07-02
申请人： Shin-hye Kim , Kyung-mun Byun , Hong-rae Kim , Gil-heyun Choi , Eun-kee Hong
发明人： Shin-hye Kim , Kyung-mun Byun , Hong-rae Kim , Gil-heyun Choi , Eun-kee Hong
CPC分类号： H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A semiconductor device may include a semiconductor substrate and a plurality of three-dimensional capacitors on the semiconductor substrate. Each of the plurality of three-dimensional capacitors may include a first three-dimensional electrode, a capacitor dielectric layer, and a second three-dimensional electrode with the first three-dimensional electrode between the capacitor dielectric layer and the semiconductor substrate and with the capacitor dielectric layer between the first and second three-dimensional electrodes. A plurality of capacitor support pads may be provided with each capacitor support pad being arranged between adjacent first three-dimensional electrodes of adjacent three-dimensional capacitors with portions of the capacitor dielectric layers between the capacitor support pads and the semiconductor substrate. Related methods and apparatuses are also discussed.
摘要翻译： 半导体器件可以包括半导体衬底和半导体衬底上的多个三维电容器。 多个三维电容器中的每一个可以包括第一三维电极，电容器电介质层和第二三维电极，其中在电容器介电层和半导体衬底之间具有第一三维电极，并且与电容器 第一和第二三维电极之间的介电层。 可以设置多个电容器支撑焊盘，每个电容器支撑焊盘布置在相邻的三维电容器的相邻的第一三维电极之间，其中电容器电介质层的一部分在电容器支撑焊盘和半导体衬底之间。 还讨论了相关的方法和装置。
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