公开(公告)号：US20220148903A1

公开(公告)日：2022-05-12

申请号：US17429434

申请日：2020-01-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL ,  Darrell EHRLICH

IPC: H01L21/683 ,  H01J37/32 ,  C04B37/00 ,  C04B41/00 ,  C04B41/45

Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

公开(公告)号：US20230087913A1

公开(公告)日：2023-03-23

申请号：US17799897

申请日：2021-02-18

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng WANG ,  Alexander MATYUSHKIN ,  Darrell EHRLICH ,  Eric SAMULON

IPC: H01L21/683 ,  H01J37/32

Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

公开(公告)号：US20240112893A1

公开(公告)日：2024-04-04

申请号：US18534182

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US20180166312A1

公开(公告)日：2018-06-14

申请号：US15894670

申请日：2018-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L22/26

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

公开(公告)号：US20210166965A1

公开(公告)日：2021-06-03

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/66

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.