公开(公告)号：US20140113453A1

公开(公告)日：2014-04-24

申请号：US13659328

申请日：2012-10-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  Anthony Amadio ,  Duane Outka ,  Yan Fang ,  Allan Ronne ,  Robert G. O'Neil ,  Rajinder Dhindsa ,  Travis Taylor

IPC: H01L21/3065 ,  H01L21/306 ,  C23C16/32 ,  B32B3/30 ,  B32B15/04 ,  C23C28/00

CPC classification number: C23C16/32 ,  C23C16/4404 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/32 ,  C23C28/322 ,  C23C28/341 ,  C25D5/36 ,  C25D17/001 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/31678

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract translation: 半导体加工设备的碳化钨涂层室组件包括金属表面，可选的中间镍涂层和外碳化钨涂层。 该组件通过任意地在组件的金属表面上沉积镍涂层并在金属表面或镍涂层上沉积碳化钨涂层以形成最外表面来制造。