中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.014 seconds)

    METHOD OF REMOVING DAMAGED EPOXY FROM ELECTROSTATIC CHUCK
    2.
    发明申请
    METHOD OF REMOVING DAMAGED EPOXY FROM ELECTROSTATIC CHUCK 有权
    从静电切片中去除损伤的环氧化物的方法

    公开(公告)号：US20140083461A1

    公开(公告)日：2014-03-27

    申请号：US13624822

    申请日：2012-09-21

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Hong Shih ,  Tuochuan Huang ,  Yan Fang ,  Cliff LaCroix ,  Neal Newton ,  Rish Chhatre

    IPC: B08B7/00

    CPC classification number: H01L21/6833 ,  B08B1/00 ,  B08B5/00 ,  B08B5/02 ,  B08B7/00 ,  B08B7/0071

    Abstract: A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.

    Abstract translation: 从静电卡盘去除环氧树脂带的方法包括将静电卡盘固定在维修夹具中，将热源施加到环氧树脂带上，以将多个粘合剂固定到静电卡盘上，从而在环形带中形成孔 环氧树脂带，并从静电吸盘拉环氧树脂带。 还描述了用于从静电卡盘除去环氧树脂带的系统。

    COMPONENTS OF PLASMA PROCESSING CHAMBERS HAVING TEXTURED PLASMA RESISTANT COATINGS
    4.
    发明申请
    COMPONENTS OF PLASMA PROCESSING CHAMBERS HAVING TEXTURED PLASMA RESISTANT COATINGS 审中-公开
    具有纹理抗菌涂料的等离子体加工釜组件

    公开(公告)号：US20130102156A1

    公开(公告)日：2013-04-25

    申请号：US13625489

    申请日：2012-09-24

    Applicant: Lam Research Corporation

    Inventor： Tom Stevenson ,  Hong Shih ,  Robert G. O'Neill ,  Tae Won Kim ,  Raphael Casaes ,  Yan Fang

    IPC: B05B1/00 ,  B32B3/02 ,  H01L21/3065 ,  B32B3/30 ,  B05D3/12 ,  C23C16/44

    CPC classification number: H01J37/32477 ,  Y10T428/218 ,  Y10T428/24471

    Abstract: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.

    Abstract translation: 等离子体处理室的组件包括其上具有高致密等离子体涂层的三维体，其中涂层的等离子体暴露表面具有抑制由等离子体暴露表面上的膜积累产生颗粒的结构。 该组件可以是电感耦合等离子体反应器的窗口，其中窗口包括织构化的氧化钇涂层。 可以通过使等离子体暴露的表面与具有有效的砂粒尺寸的抛光垫接触以提供1至2微米的深度的交叉划痕来提供纹理。

    Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings
    5.
    发明申请
    Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings 审中-公开
    包括硅涂层气体供应管道和应用涂料方法的系统

    公开(公告)号：US20170040147A1

    公开(公告)日：2017-02-09

    申请号：US15232214

    申请日：2016-08-09

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  John Michael Kerns ,  Yan Fang ,  Allan Ronne

    IPC: H01J37/32 ,  B23K31/02 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24

    CPC classification number: H01J37/32495 ,  B23K31/02 ,  B23K2101/35 ,  B23K2103/05 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069

    Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

    Abstract translation: 在一个实施例中，等离子体蚀刻系统可以包括处理气体源，等离子体处理室和气体供应导管。 等离子体可以由等离子体处理室中的处理气体配方形成。 气体供应管道可以包括形成内部配方接触表面和外部环境接触表面的耐腐蚀层状结构。 耐腐蚀层状结构可以包括保护硅层，钝化耦合层和不锈钢层。 内部配方接触表面可以由保护性硅层形成。 钝化的耦合层可以设置在保护硅层和不锈钢层之间。 钝化的偶联层可包括氧化铬和氧化铁。 钝化偶联层中的氧化铬可以比氧化铁更丰富。

    METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS
    6.
    发明申请
    METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS 有权
    清洁铝合金室部件的方法

    公开(公告)号：US20140150819A1

    公开(公告)日：2014-06-05

    申请号：US14041385

    申请日：2013-09-30

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

    IPC: H01L21/67

    CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

    Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

    Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

    Method of wet cleaning aluminum chamber parts
    7.
    发明授权
    Method of wet cleaning aluminum chamber parts 有权
    铝制室内湿法清洗方法

    公开(公告)号：US09387521B2

    公开(公告)日：2016-07-12

    申请号：US14041385

    申请日：2013-09-30

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

    IPC: B08B7/04 ,  B08B7/02 ,  B24C1/00 ,  B08B7/00 ,  H01L21/67

    CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

    Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

    Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

Patent Agency Ranking