中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.012 seconds)

    CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS
    1.
    发明申请
    CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS 有权
    在等离子体室组件上的耐腐蚀铝涂层

    公开(公告)号：US20140272459A1

    公开(公告)日：2014-09-18

    申请号：US13796751

    申请日：2013-03-12

    Applicant: LAM RESEARCH CORPORATION

    Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

    IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  C22C21/00 ,  C23C4/12

    CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

    Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

    COMPONENT OF A PLASMA PROCESSING APPARATUS INCLUDING AN ELECTRICALLY CONDUCTIVE AND NONMAGNETIC COLD SPRAYED COATING
    2.
    发明申请
    COMPONENT OF A PLASMA PROCESSING APPARATUS INCLUDING AN ELECTRICALLY CONDUCTIVE AND NONMAGNETIC COLD SPRAYED COATING 审中-公开
    等离子体处理装置的组件，包括电导和非喷涂冷喷涂

    公开(公告)号：US20150187615A1

    公开(公告)日：2015-07-02

    申请号：US14578979

    申请日：2014-12-22

    Applicant: Lam Research Corporation

    Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

    IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

    CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

    Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

    Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

    Corrosion resistant aluminum coating on plasma chamber components
    3.
    发明授权
    Corrosion resistant aluminum coating on plasma chamber components 有权
    耐腐蚀铝涂层在等离子体室部件上

    公开(公告)号：US09337002B2

    公开(公告)日：2016-05-10

    申请号：US13796751

    申请日：2013-03-12

    Applicant: Lam Research Corporation

    Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

    IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

    CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

    Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

Patent Agency Ranking