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    HIGH-CONDUCTANCE VACUUM VALVES FOR WAFER PROCESSING SYSTEMS
    1.
    发明公开
    HIGH-CONDUCTANCE VACUUM VALVES FOR WAFER PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20230360894A1

    公开(公告)日：2023-11-09

    申请号：US18006531

    申请日：2021-07-23

    Applicant: Lam Research Corporation

    Inventor： Gabriel Pioux ,  Allan Ronne

    IPC: H01J37/32

    CPC classification number: H01J37/32834 ,  H01J37/32715 ,  H01J37/32183

    Abstract: A semiconductor processing chamber performs various wafer processing operations that involve at least one of pumping the chamber to high vacuum states and regulating a vacuum (e.g., during introduction of process gases, as gas infiltrates the chamber, as reactions emit gases, as a wafer off-gases, etc.). A vacuum valve may be fluidically coupled between a vacuum pumping system and at least a portion of the semiconductor processing chamber. The vacuum valve may be a high-conductance multi-stage poppet valve enabling a relatively high gas flow rate and/or low pressure drop. In an open state, the multi-stage design of the poppet valve may have larger cross-sectional openings, in aggregate, than a comparable single-stage poppet valve could achieve, thereby increasing conductance.

    TEMPERATURE CONTROLLED WINDOW OF A PLASMA PROCESSING CHAMBER COMPONENT
    3.
    发明申请
    TEMPERATURE CONTROLLED WINDOW OF A PLASMA PROCESSING CHAMBER COMPONENT 有权
    等离子体加工室组件的温度控制窗口

    公开(公告)号：US20140217895A1

    公开(公告)日：2014-08-07

    申请号：US13756986

    申请日：2013-02-01

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Matt Busche ,  Adam Mace ,  Michael Kang ,  Allan Ronne

    IPC: H01J37/32

    CPC classification number: H01J37/32522 ,  H01J37/32119

    Abstract: A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel. The cold liquid passes through the second heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the second heat exchanger and then through the inlet of the second channel.

    Abstract translation: 电感耦合等离子体处理室的温度控制电介质窗包括形成等离子体处理室的顶壁的电介质窗口，其中至少具有第一和第二通道。 液体循环系统包括在与通道不流体连通的第一闭环中循环的冷液体源，在与通道流体连通的第二闭环中循环的热液体源，以及第一和第二 热交换器。 冷液体以可控的流速通过第一热交换器，当热液体通过第一热交换器然后通过第一通道的入口时，通过与冷液体的热交换来调节热液体的温度。 冷液体以可控的流速通过第二热交换器，当热液体通过第二热交换器然后通过第二通道的入口时，通过与冷液体的热交换来调节热液体的温度。

    Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings
    4.
    发明申请
    Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings 审中-公开
    包括硅涂层气体供应管道和应用涂料方法的系统

    公开(公告)号：US20170040147A1

    公开(公告)日：2017-02-09

    申请号：US15232214

    申请日：2016-08-09

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  John Michael Kerns ,  Yan Fang ,  Allan Ronne

    IPC: H01J37/32 ,  B23K31/02 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24

    CPC classification number: H01J37/32495 ,  B23K31/02 ,  B23K2101/35 ,  B23K2103/05 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069

    Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

    Abstract translation: 在一个实施例中，等离子体蚀刻系统可以包括处理气体源，等离子体处理室和气体供应导管。 等离子体可以由等离子体处理室中的处理气体配方形成。 气体供应管道可以包括形成内部配方接触表面和外部环境接触表面的耐腐蚀层状结构。 耐腐蚀层状结构可以包括保护硅层，钝化耦合层和不锈钢层。 内部配方接触表面可以由保护性硅层形成。 钝化的耦合层可以设置在保护硅层和不锈钢层之间。 钝化的偶联层可包括氧化铬和氧化铁。 钝化偶联层中的氧化铬可以比氧化铁更丰富。

    Temperature controlled window of a plasma processing chamber component
    5.
    发明授权
    Temperature controlled window of a plasma processing chamber component 有权
    等离子体处理室部件的温度控制窗口

    公开(公告)号：US08970114B2

    公开(公告)日：2015-03-03

    申请号：US13756986

    申请日：2013-02-01

    Applicant: Lam Research Corporation

    Inventor： Matt Busche ,  Adam Mace ,  Michael Kang ,  Allan Ronne

    IPC: H01J7/24 ,  H01J37/32

    CPC classification number: H01J37/32522 ,  H01J37/32119

    Abstract: A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel. The cold liquid passes through the second heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the second heat exchanger and then through the inlet of the second channel.

    Abstract translation: 电感耦合等离子体处理室的温度控制电介质窗包括形成等离子体处理室的顶壁的电介质窗口，其中至少具有第一和第二通道。 液体循环系统包括在与通道不流体连通的第一闭环中循环的冷液体源，在与通道流体连通的第二闭环中循环的热液体源，以及第一和第二 热交换器。 冷液体以可控的流速通过第一热交换器，当热液体通过第一热交换器然后通过第一通道的入口时，通过与冷液体的热交换来调节热液体的温度。 冷液体以可控的流速通过第二热交换器，当热液体通过第二热交换器然后通过第二通道的入口时，通过与冷液体的热交换来调节热液体的温度。

    System and method for cleaning gas injectors
    6.
    发明授权
    System and method for cleaning gas injectors 有权
    清洁气体喷射器的系统和方法

    公开(公告)号：US08945317B2

    公开(公告)日：2015-02-03

    申请号：US13650429

    申请日：2012-10-12

    Applicant: Lam Research Corporation

    Inventor： Armen Avoyan ,  Cliff La Croix ,  Hong Shih ,  Allan Ronne ,  John Daugherty ,  Catherine Zhou

    IPC: B08B9/02

    CPC classification number: B08B9/0328

    Abstract: An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

    Abstract translation: 具有同心双流引导器和分流喷射器座的喷射器清洁装置以及清洁喷射器的方法。 同心双流引导器具有配置成与气体注射器的中心通道和多个外围通道连通的同心清洁流体流动路径。 同心双流引导器和流量分散注射器座的输入侧注射器接合界面各自具有可压缩的密封部分，该密封部分具有足够的压缩性，足以产生由于通过喷射器清洁装置的清洁流体流动的起始和终止引起的流体清洁浪涌 其弹性足以防止气体注射器和输入侧注射器接合界面和输出侧注射器接合界面的刚性面对部分的邻接。

    SYSTEM AND METHOD FOR CLEANING GAS INJECTORS
    8.
    发明申请
    SYSTEM AND METHOD FOR CLEANING GAS INJECTORS 有权
    清洁气体注射器的系统和方法

    公开(公告)号：US20130146095A1

    公开(公告)日：2013-06-13

    申请号：US13650429

    申请日：2012-10-12

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Armen Avoyan ,  Cliff La Croix ,  Hong Shih ,  Allan Ronne ,  John Daugherty ,  Catherine Zhou

    IPC: B08B9/032 ,  B08B3/02

    CPC classification number: B08B9/0328

    Abstract: An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

    Abstract translation: 具有同心双流引导器和分流喷射器座的喷射器清洁装置以及清洁喷射器的方法。 同心双流引导器具有配置成与气体注射器的中心通道和多个外围通道连通的同心清洁流体流动路径。 同心双流引导器和流量分散注射器座的输入侧注射器接合界面各自具有可压缩的密封部分，该密封部分具有足够的压缩性，足以产生由于通过喷射器清洁装置的清洁流体流动的起始和终止引起的流体清洁浪涌 其弹性足以防止气体注射器和输入侧注射器接合界面和输出侧注射器接合界面的刚性面对部分的邻接。

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