公开(公告)号：US09953825B2

公开(公告)日：2018-04-24

申请号：US13683305

申请日：2012-11-21

Applicant: Lam Research Corporation

Inventor： David Carman ,  Travis Taylor ,  Devin Ramdutt

IPC: H01L21/02 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/02 ,  H01J37/32091 ,  H01J37/32477 ,  H01L21/6831

Abstract: An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.

公开(公告)号：US20140127911A1

公开(公告)日：2014-05-08

申请号：US13670940

申请日：2012-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  Rajinder Dhindsa ,  Travis Taylor ,  John Daugherty

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065 ,  C25D7/04 ,  C25D7/00

CPC classification number: H01L21/67069 ,  C23C16/4404 ,  C23C18/42 ,  C25D3/60 ,  C25D5/44 ,  C25D7/02 ,  C25D7/04 ,  H01J37/32477 ,  Y10T428/1259 ,  Y10T428/1275

Abstract: A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component.

Abstract translation: 半导体等离子体处理室的镀钯铝部件包括至少包含铝或铝合金表面的基板和在基板的铝或铝合金表面上的镀钯。 钯镀层包括部件的暴露表面和/或部件的配合表面。

公开(公告)号：US20140113453A1

公开(公告)日：2014-04-24

申请号：US13659328

申请日：2012-10-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  Anthony Amadio ,  Duane Outka ,  Yan Fang ,  Allan Ronne ,  Robert G. O'Neil ,  Rajinder Dhindsa ,  Travis Taylor

IPC: H01L21/3065 ,  H01L21/306 ,  C23C16/32 ,  B32B3/30 ,  B32B15/04 ,  C23C28/00

CPC classification number: C23C16/32 ,  C23C16/4404 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/32 ,  C23C28/322 ,  C23C28/341 ,  C25D5/36 ,  C25D17/001 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/31678

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract translation: 半导体加工设备的碳化钨涂层室组件包括金属表面，可选的中间镍涂层和外碳化钨涂层。 该组件通过任意地在组件的金属表面上沉积镍涂层并在金属表面或镍涂层上沉积碳化钨涂层以形成最外表面来制造。