公开(公告)号：US20150188009A1

公开(公告)日：2015-07-02

申请号：US14304817

申请日：2014-06-13

Applicant: Lextar Electronics Corporation

Inventor： Wen-Ying CHIH ,  Nai-Wei HSU ,  Te-Chung WANG

IPC: H01L33/58 ,  H01L33/00

CPC classification number: H01L33/0095

Abstract: The present disclosure provides a method of manufacturing a semiconductor device, including providing a semiconductor structure including a sequential stack of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. A first metal layer and a second metal layer on the first metal layer are formed on the semiconductor structure. A heat treatment process is performed, such that the first metal layer is oxidized to form a first metal oxide layer and the second metal layer is reversed to form a second metallic compound layer between the first metal oxide layer and the p-type semiconductor layer. The first metal oxide layer and the second metallic compound layer are removed. A mesa etching process is performed after performing the heat treatment process, to form a mesa region exposing a part of the n-type semiconductor layer.

Abstract translation: 本公开提供一种制造半导体器件的方法，包括提供包括n型半导体层，有源层和p型半导体层的顺序堆叠的半导体结构。 第一金属层上的第一金属层和第二金属层形成在半导体结构上。 执行热处理工艺，使得第一金属层被氧化以形成第一金属氧化物层，并且第二金属层反转以在第一金属氧化物层和p型半导体层之间形成第二金属化合物层。 去除第一金属氧化物层和第二金属化合物层。 在进行热处理工艺之后进行台面蚀刻工艺，以形成暴露n型半导体层的一部分的台面区域。

公开(公告)号：US20160149077A1

公开(公告)日：2016-05-26

申请号：US15010667

申请日：2016-01-29

Applicant: Lextar Electronics Corporation

Inventor： Chia-Lin HSIAO ,  Nai-Wei HSU ,  Te-Chung WANG ,  Tsung-Yu YANG

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734 ,  Y10S977/95

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。

公开(公告)号：US20150108519A1

公开(公告)日：2015-04-23

申请号：US14273493

申请日：2014-05-08

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Ming-Chang TANG ,  Chia-Hsian CHOU ,  Nai-Wei HSU

IPC: H01L33/20

CPC classification number: H01L33/20

Abstract: A light-emitting structure is provided, including a substrate, an LED stacked structure formed on the substrate, and a plurality of cavities formed on the substrate surrounding the LED stacked structure. The LED stacked structure comprises an N-type epitaxial layer, an illumination layer, and a P-type epitaxial layer. A portion of the N-type epitaxial layer is exposed.

Abstract translation: 提供了一种发光结构，包括基板，形成在基板上的LED层叠结构，以及形成在包围LED堆叠结构的基板上的多个空腔。 LED堆叠结构包括N型外延层，照明层和P型外延层。 露出N型外延层的一部分。

公开(公告)号：US20150255681A1

公开(公告)日：2015-09-10

申请号：US14325215

申请日：2014-07-07

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Nai-Wei HSU ,  Te-Chung WANG

IPC: H01L33/40 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/44

Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.

Abstract translation: 公开了一种发光二极管（LED）芯片。 该芯片包括发光二极管和发光二极管上的电极层。 电极层包括反射金属层。 反射金属层包括第一组合物和第二组合物。 第一组合物包括铝或银，第二组合物包括铜，硅，锡，铂，金或其组合。 第二组合物的重量百分比大于0％且小于20％。

公开(公告)号：US20150115309A1

公开(公告)日：2015-04-30

申请号：US14493478

申请日：2014-09-23

Applicant: Lextar Electronics Corporation

Inventor： Nai-Wei HSU ,  Te-Chung WANG ,  Tzong-Liang TSAI

IPC: H01L33/62 ,  H01L33/44 ,  H01L33/36

CPC classification number: H01L33/40

Abstract: A light emitting diode structure includes a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a composite conductive layer, a first electrode, and a second electrode. The N-type semiconductor layer is located on the substrate. The light emitting layer is located on a portion of the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer. The composite conductive layer sequentially has a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer is attached to the P-type semiconductor layer, and the resistance of the first conductive layer is greater than the resistance of the third conductive layer. The first electrode is located on the third conductive layer. The second electrode is located on another portion of the N-type semiconductor layer that is not covered by the light emitting layer.

Abstract translation: 发光二极管结构包括衬底，N型半导体层，发光层，P型半导体层，复合导电层，第一电极和第二电极。 N型半导体层位于基板上。 发光层位于N型半导体层的一部分上。 P型半导体层位于发光层上。 复合导电层依次具有第一导电层，第二导电层和第三导电层。 第一导电层附接到P型半导体层，第一导电层的电阻大于第三导电层的电阻。 第一电极位于第三导电层上。 第二电极位于未被发光层覆盖的N型半导体层的另一部分上。

公开(公告)号：US20210280742A1

公开(公告)日：2021-09-09

申请号：US17033700

申请日：2020-09-26

Applicant: Lextar Electronics Corporation

Inventor： Pei-Shiu TSAI ,  Yi-Ju CHEN ,  Nai-Wei HSU ,  Wei-Chang YU

IPC: H01L33/10 ,  H01L33/62

Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first and second insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second protrusions covering first and second portions respectively, and a first recession exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first protrusion to contact the semiconductor structure. The second conductive portion is disposed on the second protrusion to contact the third portion through the first recession. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.

公开(公告)号：US20160111602A1

公开(公告)日：2016-04-21

申请号：US14986559

申请日：2015-12-31

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Nai-Wei HSU ,  Te-Chung WANG

IPC: H01L33/40 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/44

Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold, palladium or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.

Abstract translation: 公开了一种发光二极管（LED）芯片。 该芯片包括发光二极管和发光二极管上的电极层。 电极层包括反射金属层。 反射金属层包括第一组合物和第二组合物。 第一组合物包括铝或银，第二组合物包括铜，硅，锡，铂，金，钯或其组合。 第二组合物的重量百分比大于0％且小于20％。