High-resolution micro-LED display device and manufacturing method of the same

    公开(公告)号:US10903195B2

    公开(公告)日:2021-01-26

    申请号:US16545973

    申请日:2019-08-20

    Abstract: A manufacturing method of a micro-LED display device comprises forming a plurality of thin-film transistor array areas that includes a plurality of thin-film transistor arrays on a first substrate; forming a plurality of micro-LED array areas that includes a plurality of micro-LED arrays on a second substrate; transferring the plurality of micro-LED array areas that correspond to the plurality of thin-film transistor array areas onto the first substrate; forming a bank film on a third substrate over the first substrate; patterning the bank film to form a first bank layer that corresponds to a boundary area between the plurality of micro-LED arrays and a second bank layer that corresponds to an edge area of the plurality of micro-LED array areas, to form a pixel area and a pixel array area, and to remove the bank film in a boundary area between the second bank layers adjacent to each other; cutting the third substrate and the first substrate along a scribe zone that is set in a boundary area between the second bank layers adjacent to each other; and separating a plurality of pixel arrays that includes the plurality of thin-film transistor arrays and the plurality of micro-LED arrays from the first substrate and transferring the plurality of pixel arrays onto a fourth substrate.

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