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    Organic light emitting display apparatus
    2.
    发明授权
    Organic light emitting display apparatus 有权

    公开(公告)号：US11758778B2

    公开(公告)日：2023-09-12

    申请号：US17122599

    申请日：2020-12-15

    Applicant: LG Display Co., Ltd.

    Inventor： Hyoung-Su Kim ,  Hyeseon Eom ,  Doohyun Yoon

    IPC: H10K59/131 ,  G09G3/3258 ,  G09G3/3291 ,  H10K59/65

    CPC classification number: H10K59/131 ,  G09G3/3258 ,  G09G3/3291 ,  H10K59/65

    Abstract: An organic light emitting display apparatus includes an organic light emitting display panel including a display area, including a transparent area and an opaque area, and a non-display area, a gate driver sequentially supplying a gate pulse to a plurality of gate lines included in the organic light emitting display panel, and an initialization unit transferring gate pulses and/or initialization control signals, output from the gate driver, to a plurality of transparent area gate lines. A camera photographing a region in a forward direction with respect to the organic light emitting display panel is provided in the transparent area of a rear surface of the organic light emitting display panel. A first pixel driving circuit provided in the transparent area includes two transistors, and a second pixel driving circuit provided in the opaque area includes at least three transistors.

    Stretchable display device
    3.
    发明授权
    Stretchable display device 有权

    公开(公告)号：US11935993B2

    公开(公告)日：2024-03-19

    申请号：US17028605

    申请日：2020-09-22

    Applicant: LG Display Co., Ltd.

    Inventor： Hyeseon Eom ,  Jonghyeok Im ,  Doohyun Yoon

    IPC: H01L29/20 ,  H01L23/538 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/62 ,  G09G3/32

    CPC classification number: H01L33/62 ,  H01L23/5387 ,  H01L25/0753 ,  H01L27/1214 ,  G09G3/32 ,  G09G2310/0275 ,  G09G2380/02

    Abstract: A stretchable display device according to present disclosure may include a base substrate, a plurality of first substrates on the base substrate, a plurality of second substrates connecting adjacent first substrates, inorganic insulating layers on the first substrates, an organic insulating layer disposed on the first substrates so as to cover top surfaces and side surfaces of the inorganic insulating layers. The device includes first connection lines disposed on the organic insulating layer on the first substrates and disposed on a second substrate extending in a first direction, second connection lines disposed between the inorganic insulating layers and the organic insulating layer on the first substrates and disposed on a second substrate extending in a second direction, and a step alleviating layer disposed between the second connection lines and the inorganic insulating layers.

    Thin film transistor substrate for organic light-emitting diode display and manufacturing method thereof
    4.
    发明授权
    Thin film transistor substrate for organic light-emitting diode display and manufacturing method thereof 有权

    公开(公告)号：US10651256B2

    公开(公告)日：2020-05-12

    申请号：US15957139

    申请日：2018-04-19

    Applicant: LG Display Co., Ltd.

    Inventor： Kummi Oh ,  Hyeseon Eom ,  Shunyoung Yang ,  Jeoungin Lee

    IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  H01L51/56

    Abstract: Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.

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