-
公开(公告)号：US20170155088A1
公开(公告)日：2017-06-01
申请号：US15365229
申请日：2016-11-30
发明人： Ho-Jin KIM , ChoongKeun YOO , YongBaek LEE , Hyungjun KIM , Il-Kwon OH , Seunggi SEO
CPC分类号： H01L51/5253 , H01L27/3244 , H01L27/3248 , H01L27/3276 , H01L2227/323
摘要： Discussed is a display device and a fabricating method thereof according to an embodiment, in which an organic-inorganic composite film is patterned without a mask by using an anti-film layer, and a residual anti-film layer protects a pad portion. The display device comprises a lower substrate; pixels arranged on a display area of the lower substrate; pads arranged on a non-display area of the lower substrate; an encapsulation layer arranged on the pixels; and an anti-film layer arranged on the pads as a molecular layer having a thickness of a single molecule. Also, the fabricating method of the display device comprises the steps of forming pads on a non-display area of a lower substrate and forming pixels on a display area; and forming an anti-film layer on the pixels as a molecular layer having a thickness of a single molecule.
-
公开(公告)号：US20160032448A1
公开(公告)日：2016-02-04
申请号：US14815797
申请日：2015-07-31
申请人： Industry-Academic Cooperation Foundation, Yonsei University , Incheon University Industry Academic Cooperation Foundation
发明人： Hyungjun KIM , Il-Kwon OH , Han-Bo-Ram LEE
IPC分类号： C23C16/06 , C23C16/50 , C23C16/46 , C23C16/455
CPC分类号： C23C16/45525 , B08B17/065 , C23C16/045 , C23C16/40 , C23C16/405 , C23C16/45555
摘要： The present disclosure relates to a superhydrophobic coating material and a method for manufacturing the superhydrophobic coating material. The superhydrophobic coating material according to the present disclosure includes a substrate provided with a three-dimensional nano structure; and a coating layer comprising a rare earth metal oxide formed on the three-dimensional nano structure. The method for manufacturing the superhydrophobic coating material according to the present disclosure includes preparing a substrate provided with a three-dimensional nano structure; and forming a coating layer comprising a rare earth metal oxide on the three-dimensional nano structure by supplying a precursor including a rare earth metal and an oxidant one by one onto the substrate, and the temperature of the substrate is controlled in the forming step so that an atomic ratio of a carbon element in the coating layer is less than 1% to form the coating layer with superhydrophobic property.
摘要翻译： 本发明涉及超疏水涂层材料和制造超疏水涂层材料的方法。 根据本公开的超疏水涂料包括具有三维纳米结构的基材; 以及包含在三维纳米结构上形成的稀土金属氧化物的涂层。 根据本公开的制造超疏水涂层材料的方法包括制备具有三维纳米结构的基底; 并通过将包含稀土金属和氧化剂的前体一个接一个地提供到基板上，在三维纳米结构上形成包含稀土金属氧化物的涂层，并且在成形步骤中控制基板的温度 涂层中碳元素的原子比小于1％以形成具有超疏水性的涂层。
-
公开(公告)号：US20160163588A1
公开(公告)日：2016-06-09
申请号：US14598080
申请日：2015-01-15
申请人： Industry-Academic Cooperation Foundation, Yonsei University , Incheon University Industry Academic Cooperation Foundation
发明人： Hyungjun KIM , Jaehong YOON , Soohyeon KIM , Han-Bo-Ram LEE
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53266 , H01L21/28562 , H01L21/76843 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. Disclosed is a semiconductor device including a substrate, a conductive line on the substrate, and a seed layer between the substrate and the conductive line, the seed layer including cobalt titanium nitride.
摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 公开了一种半导体器件，包括衬底，在衬底上的导电线，以及衬底和导电线之间的晶种层，种子层包括钴钛氮化物。
-
4.发明申请METHOD OF FORMING A METAL SULFIDE ALLOY AND AN ELECTRONIC DEVICE WITH THE METAL SULFIDE ALLOY 审中-公开形成金属硫化物合金的方法和具有金属硫化物合金的电子器件公开(公告)号：US20160056039A1
公开(公告)日：2016-02-25
申请号：US14703091
申请日：2015-05-04
发明人： Hyungjun KIM , Jeong-Gyu SONG , Jusang PARK
IPC分类号： H01L21/02 , H01L31/032 , H01L31/18 , H01L29/24 , H01L29/786
CPC分类号： H01L21/02568 , C23C16/405 , C23C16/45529 , C23C16/56 , H01L21/02614 , H01L21/0262 , H01L29/24 , H01L29/66742 , H01L29/78681 , H01L31/032
摘要： Example embodiments of the inventive concept relate to a method of forming a metal sulfide alloy. The method may include forming a metal oxide alloy on a substrate using an ALD process and transforming the metal oxide alloy to a metal sulfide alloy.
摘要翻译： 本发明构思的示例性实施例涉及形成金属硫化物合金的方法。 该方法可以包括使用ALD工艺在基板上形成金属氧化物合金，并将金属氧化物合金转变成金属硫化物合金。
-
公开(公告)号：US20170267527A1
公开(公告)日：2017-09-21
申请号：US15421496
申请日：2017-02-01
发明人： Hyungjun KIM , Kyung Yong KO , Kyunam PARK
IPC分类号： C01B19/00 , C23C16/30 , C23C16/455
CPC分类号： C01B19/002 , C01P2002/82 , C23C16/305 , C23C16/45525 , C23C16/45531
摘要： Disclosed are a transition metal dichalcogenide alloy and a method of manufacturing the same. A method of manufacturing a transition metal dichalcogenide alloy according to an embodiment of the present disclosure includes a step of depositing transition metal dichalcogenide on a substrate using atomic layer deposition (ALD); and a step of forming a transition metal dichalcogenide alloy by thermally treating the transition metal dichalcogenide with a sulfur compound.
-
公开(公告)号：US20150241386A1
公开(公告)日：2015-08-27
申请号：US14629437
申请日：2015-02-23
发明人： Hyungjun KIM , Kyung Yong KO , Jeong-Gyu SONG
IPC分类号： G01N27/414 , H05K3/32 , H05K3/10
CPC分类号： H05K3/32 , G01N27/125 , G01N27/127 , Y10T29/49147
摘要： Provided are a gas sensor and a method of manufacturing the same. The gas sensor may include a transition metal chalcogenide layer on a substrate, a metal nano material on the transition metal chalcogenide layer, and an electrode on the transition metal chalcogenide layer with the metal nano material.
摘要翻译： 提供一种气体传感器及其制造方法。 气体传感器可以包括在基底上的过渡金属硫族化物层，过渡金属硫族化物层上的金属纳米材料和在金属纳米材料的过渡金属硫族化物层上的电极。
-
公开(公告)号：US20160289825A1
公开(公告)日：2016-10-06
申请号：US15089702
申请日：2016-04-04
发明人： Hyungjun KIM , Taejin CHOI , Jeong-Gyu SONG
IPC分类号： C23C16/44
CPC分类号： C23C16/02 , C23C16/26 , C23C16/45525
摘要： Disclosed is a carbon thin-film device and method for manufacturing the same. The method includes forming a functional group on a surface of a substrate and functionalizing the substrate, and depositing a carbon thin film through ALD on the substrate in which the functional group is formed.
摘要翻译： 公开了一种碳薄膜器件及其制造方法。 该方法包括在基板的表面上形成官能团并对基板进行官能化，并在形成有官能团的基板上通过ALD沉积碳薄膜。
-
公开(公告)号：US20160122868A1
公开(公告)日：2016-05-05
申请号：US14932668
申请日：2015-11-04
发明人： Hyungjun KIM , YOUNGJUN KIM , Jeong-Gyu SONG , Jusang PARK
IPC分类号： C23C16/30 , H01L21/02 , C23C16/52 , C01G39/06 , C23C16/455
CPC分类号： C23C16/305 , C01G39/06 , C01P2002/82 , C01P2002/85 , C01P2004/04 , C23C16/45527 , C23C16/52 , H01L21/02422 , H01L21/02568 , H01L21/0262
摘要： Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness.
摘要翻译： 公开了一种合成过渡金属硫族化物的方法，其中通过原子层沉积在衬底上合成过渡金属硫族化物，以顺序地供应过渡金属硫族化物的前体和反应物以具有预定的合成厚度，转变 金属硫属元素化合物是在450℃以上且1000℃以下的过程温度下合成的，过渡金属硫属元素在与规定的合成厚度对应的工艺温度下合成。
-
9.发明申请METHOD OF REMOVING OXIDE FROM SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权从基板除去氧化物的方法及使用其制造半导体器件的方法公开(公告)号：US20150194300A1
公开(公告)日：2015-07-09
申请号：US14590319
申请日：2015-01-06
发明人： Hyungjun KIM , Il-Kwon OH
CPC分类号： H01L29/16 , H01L21/02181 , H01L21/0228 , H01L21/02301 , H01L21/02321 , H01L21/02337 , H01L21/02362 , H01L29/66181 , H01L29/94
摘要： Provided is a method of removing native oxide from a substrate, the method including exposing the substrate to trimethyl aluminum (TMA) or dicyclopentadienyl magnesium (MgCp2) for a predetermined time.
摘要翻译： 本发明提供从基板除去天然氧化物的方法，该方法包括将基板暴露于三甲基铝（TMA）或二环戊二烯基镁（MgCp 2）预定时间。
-
10.发明申请METHOD FOR SYNTHESIZING A HALOGEN-FUNCTIONALIZED CARBON MATERIAL AND METHOD FOR FABRICATING AN ELECTRONIC DEVICE EMPLOYING THE SAME 有权用于合成卤化官能化碳材料的方法和制备使用其的电子器件的方法公开(公告)号：US20150294907A1
公开(公告)日：2015-10-15
申请号：US14683050
申请日：2015-04-09
发明人： Hyungjun KIM , Tae Jin CHOI
IPC分类号： H01L21/768
CPC分类号： H01L51/0045 , C01B32/186 , H01L51/0558
摘要： Provided are methods for synthesizing a halogen-functionalized carbon material and for fabricating an electronic device employing the same. The synthesizing method of the halogen-functionalized carbon material may include thermally treating a transition metal material at a first temperature in a hydrogen atmosphere and thermally treating the transition metal material at a second temperature, which is lower than or equal to the first temperature, while further supplying halocarbon on the transition metal material.
摘要翻译： 提供了用于合成卤素官能化碳材料和制造使用其的电子器件的方法。 卤素官能化碳材料的合成方法可以包括在氢气氛中的第一温度下对过渡金属材料进行热处理，并在低于或等于第一温度的第二温度下热处理过渡金属材料，同时 在过渡金属材料上进一步供应卤化碳。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.021 秒)
