公开(公告)号：US09252220B2

公开(公告)日：2016-02-02

申请号：US14589730

申请日：2015-01-05

Applicant: LG ELECTRONICS INC.

Inventor： Junho Kim ,  Seongmoo Cho ,  Taehoon Jang ,  Eujin Hwang ,  Jaemoo Kim

IPC: H01L29/20 ,  H01L29/36 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L29/201 ,  H01L29/207

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。

公开(公告)号：US08841179B2

公开(公告)日：2014-09-23

申请号：US13673436

申请日：2012-11-09

Applicant: LG Electronics Inc.

Inventor： Seongmoo Cho ,  Kwangchoong Kim ,  Eujin Hwang ,  Taehoon Jang

IPC: H01L21/338 ,  H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/205 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L21/2056 ,  H01L29/0619 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Abstract translation: 一种半导体器件，包括依次层叠在基板上的第一GaN层，AlGaN层，第二GaN层，栅极电极，源极电极和漏极电极，能够提高漏电流和在 提供了在AlGaN层上局部形成p型GaN层的栅电极及其制造方法及其制造方法。 半导体器件包括：衬底，在衬底上形成的第一GaN层，形成在第一GaN层上的AlGaN层，形成在AlGaN层上并包括ap型GaN层的第二GaN层和形成在第一GaN层上的栅电极 第二GaN层，其中p型GaN层可以与栅电极的一部分接触。