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    POWER MODULE
    1.
    发明申请
    POWER MODULE 有权

    公开(公告)号：US20210210411A1

    公开(公告)日：2021-07-08

    申请号：US17034458

    申请日：2020-09-28

    Applicant: LG ELECTRONICS INC.

    Inventor： Seongmoo Cho ,  Kwangsoo Kim ,  Siho Choi ,  Gun Lee

    IPC: H01L23/473 ,  H01L25/07

    Abstract: The present disclosure provides a power module including a substrate, an electronic element provided on the substrate, and a cooling fin portion provided on one surface of the substrate to form a flow path portion through which cooling water flows. The cooling fin portion is formed asymmetrically so that amounts of heat transferred by the cooling water acting on the electronic element are different.
    As a result, regions in which heat is directly transferred between cooling water and the electronic element can be increased and a pressure drop of cooling water flowing through the flow path portion can be prevented by the cooling fin portion forming an asymmetrical structure of the flow path portion. In addition, a heat dissipation performance of the power module by the cooling water can be further improved.

    Device for power factor correction
    4.
    发明授权
    Device for power factor correction 有权

    公开(公告)号：US11258355B2

    公开(公告)日：2022-02-22

    申请号：US16399522

    申请日：2019-04-30

    Applicant: LG ELECTRONICS INC.

    Inventor： Seongmoo Cho ,  Kwangsoo Kim

    IPC: H02M1/42 ,  G05F1/70 ,  H02P23/26 ,  H02M5/458 ,  H02M1/32

    Abstract: A device for power factor correction can include a converter housing having an inner surface; a first converter substrate mounted on the inner surface of the converter housing; a second converter substrate mounted on another surface of first converter housing opposite to the inner surface; and a housing cover covering the first converter substrate and coupled to an upper surface of the converter housing, in which the second converter substrate includes a first surface having a first region including a source pad, and a second region including a drain pad spaced apart from the source pad, the source pad including a source pad extension portion extending into the second region; and a second surface including a heat dissipation pad for communicating heat from the source and drain pads to an outside of the device, in which the first region of the second converter substrate overlaps with the another surface of first converter housing, and the second region of the second converter substrate faces the housing cover without overlapping with the first converter substrate.

    NITRIDE SEMICONDUCTOR AND FABRICATING METHOD THEREOF
    6.
    发明申请
    NITRIDE SEMICONDUCTOR AND FABRICATING METHOD THEREOF 有权
    氮化物半导体及其制造方法

    公开(公告)号：US20140054600A1

    公开(公告)日：2014-02-27

    申请号：US13947641

    申请日：2013-07-22

    Applicant: LG Electronics Inc.

    Inventor： Seongmoo Cho ,  Taehoon Jang

    IPC: H01L29/78 ,  H01L29/24 ,  H01L29/205

    CPC classification number: H01L29/78 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/24 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    Abstract: This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a partial area of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers.

    Abstract translation: 本说明书涉及一种能够通过在具有第一GaN层的半导体器件中形成包括多个GaN层和介于多个GaN层之间的FexNy层的第一GaN层来减少漏电流的半导体器件，AlGaN层 ，第二GaN层，栅极电极，源极电极和漏极电极及其制造方法。 为此，根据一个示例性实施例的半导体器件包括第一GaN层，第一GaN层上的AlGaN层，AlGaN层上的第二GaN层，以及源电极，漏电极和栅电极， 所述第二GaN层的部分区域，其中所述第一GaN层包括插入在所述多个GaN层之间的多个GaN层和FexNy层。

    POWER MODULE
    7.
    发明申请
    POWER MODULE 有权

    公开(公告)号：US20210257280A1

    公开(公告)日：2021-08-19

    申请号：US17038429

    申请日：2020-09-30

    Applicant: LG ELECTRONICS INC.

    Inventor： Siho CHOI ,  Seongmoo Cho ,  Oksun Yu ,  Kwangsoo Kim ,  Gun Lee

    IPC: H01L23/495 ,  H05K7/02

    Abstract: A power module is disclosed. A power module according to an embodiment of the present disclosure may include a first substrate and a second substrate spaced apart from each other, an electronic device unit provided on at least either one of the first and second substrates, and a lead frame unit provided between the first and second substrates. One side of the lead frame unit may be connected to an external circuit, and the other side thereof may be configured to electrically connect the first and second substrates. Accordingly, the lead frame unit may perform a function of electrically connecting the first and second substrates instead of a via spacer in the related art.

    Nitride semiconductor and fabricating method thereof
    8.
    发明授权
    Nitride semiconductor and fabricating method thereof 有权
    氮化物半导体及其制造方法

    公开(公告)号：US09276103B2

    公开(公告)日：2016-03-01

    申请号：US13947641

    申请日：2013-07-22

    Applicant: LG Electronics Inc.

    Inventor： Seongmoo Cho ,  Taehoon Jang

    IPC: H01L29/78 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/205 ,  H01L29/24 ,  H01L29/778 ,  H01L29/20

    CPC classification number: H01L29/78 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/24 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    Abstract: This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a portion of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers.

    Abstract translation: 本说明书涉及一种能够通过在具有第一GaN层的半导体器件中形成包括多个GaN层和介于多个GaN层之间的FexNy层的第一GaN层来减少漏电流的半导体器件，AlGaN层 ，第二GaN层，栅极电极，源极电极和漏极电极及其制造方法。 为此，根据一个示例性实施例的半导体器件包括第一GaN层，第一GaN层上的AlGaN层，AlGaN层上的第二GaN层，以及源电极，漏电极和栅电极， 所述第二GaN层的一部分，其中所述第一GaN层包括插入在所述多个GaN层之间的多个GaN层和FexNy层。

    Nitride semiconductor device using selective growth and manufacturing method thereof
    9.
    发明授权
    Nitride semiconductor device using selective growth and manufacturing method thereof 有权
    氮化物半导体器件采用选择性生长及其制造方法

    公开(公告)号：US08841179B2

    公开(公告)日：2014-09-23

    申请号：US13673436

    申请日：2012-11-09

    Applicant: LG Electronics Inc.

    Inventor： Seongmoo Cho ,  Kwangchoong Kim ,  Eujin Hwang ,  Taehoon Jang

    IPC: H01L21/338 ,  H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/205 ,  H01L29/20

    CPC classification number: H01L29/7783 ,  H01L21/2056 ,  H01L29/0619 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

    Abstract: A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

    Abstract translation: 一种半导体器件，包括依次层叠在基板上的第一GaN层，AlGaN层，第二GaN层，栅极电极，源极电极和漏极电极，能够提高漏电流和在 提供了在AlGaN层上局部形成p型GaN层的栅电极及其制造方法及其制造方法。 半导体器件包括：衬底，在衬底上形成的第一GaN层，形成在第一GaN层上的AlGaN层，形成在AlGaN层上并包括ap型GaN层的第二GaN层和形成在第一GaN层上的栅电极 第二GaN层，其中p型GaN层可以与栅电极的一部分接触。

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