Photoelectric feedback sensing system having a sensing apparatus outputting a light signal corresponding to a characteristic of a sample within the sensing apparatus
    1.
    发明授权
    Photoelectric feedback sensing system having a sensing apparatus outputting a light signal corresponding to a characteristic of a sample within the sensing apparatus 有权
    光电反馈感测系统具有感测装置,其输出对应于感测装置内的样本特征的光信号

    公开(公告)号:US08357888B2

    公开(公告)日:2013-01-22

    申请号:US12925101

    申请日:2010-10-14

    IPC分类号: G01J1/32

    摘要: The present invention relates to a photoelectrical feedback sensing system. A first light signal passes through the sensing apparatus. A second light signal corresponding to a characteristic of a sample within the sensing apparatus is outputted from the sensing apparatus. The first photo detector receives the first light signal and outputs a first electric signal corresponding to the intensity of the first light signal. The second photo detector outputs a second electric signal corresponding to the intensity of the second light signal. A driving signal is generated by the micro-processor to drive the light-emitting unit. The micro-processor receives the second electric signal and converts the second electric signal into a digital signal. The feedback circuit modulates the driving signal for maintaining the optical stability of the first light signal so that the sensing system is less affected by environmental temperature fluctuation and noise interferences.

    摘要翻译: 本发明涉及光电反馈感测系统。 第一光信号通过感测装置。 从感测装置输出对应于感测装置内的样本的特性的第二光信号。 第一光检测器接收第一光信号并输出​​与第一光信号的强度对应的第一电信号。 第二光电检测器输出与第二光信号的强度对应的第二电信号。 由微处理器产生驱动信号以驱动发光单元。 微处理器接收第二电信号并将第二电信号转换为数字信号。 反馈电路调制驱动信号,以保持第一光信号的光学稳定性,使感测系统受环境温度波动和噪声干扰的影响较小。

    Photoelectric feedback sensing system
    2.
    发明申请
    Photoelectric feedback sensing system 有权
    光电反馈传感系统

    公开(公告)号:US20110278434A1

    公开(公告)日:2011-11-17

    申请号:US12925101

    申请日:2010-10-14

    IPC分类号: G01J1/20

    摘要: The present invention relates to a photoelectrical feedback sensing system. A first light signal passes through the sensing apparatus. A second light signal corresponding to a characteristic of a sample within the sensing apparatus is outputted from the sensing apparatus. The first photo detector receives the first light signal and outputs a first electric signal corresponding to the intensity of the first light signal. The second photo detector outputs a second electric signal corresponding to the intensity of the second light signal. A driving signal is generated by the micro-processor to drive the light-emitting unit. The micro-processor receives the second electric signal and converts the second electric signal into a digital signal. The feedback circuit modulates the driving signal for maintaining the optical stability of the first light signal so that the sensing system is less affected by environmental temperature fluctuation and noise interferences.

    摘要翻译: 本发明涉及光电反馈感测系统。 第一光信号通过感测装置。 从感测装置输出对应于感测装置内的样本的特性的第二光信号。 第一光检测器接收第一光信号并输出​​与第一光信号的强度对应的第一电信号。 第二光电检测器输出与第二光信号的强度对应的第二电信号。 由微处理器产生驱动信号以驱动发光单元。 微处理器接收第二电信号并将第二电信号转换为数字信号。 反馈电路调制驱动信号,以保持第一光信号的光学稳定性,使感测系统受环境温度波动和噪声干扰的影响较小。

    Implanting method for forming photodiode
    3.
    发明授权
    Implanting method for forming photodiode 有权
    用于形成光电二极管的植入方法

    公开(公告)号:US08652868B2

    公开(公告)日:2014-02-18

    申请号:US13410165

    申请日:2012-03-01

    IPC分类号: H01L21/00

    摘要: An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

    摘要翻译: 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底,在衬底上生长外延层,从衬底的前侧在外延层中注入具有第二导电性的离子,并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法,光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

    Localized plasmon resonance sensing device and system thereof
    4.
    发明申请
    Localized plasmon resonance sensing device and system thereof 审中-公开
    本地等离子体共振感测装置及其系统

    公开(公告)号:US20100171958A1

    公开(公告)日:2010-07-08

    申请号:US12459293

    申请日:2009-06-30

    IPC分类号: G01N21/55

    摘要: The present invention discloses a LPR sensing device and a LPR sensing system comprising a LPR sensing device, a light source, a detecting unit and a processing unit. The LPR sensing device comprises a sensing substrate and a noble metal nanoparticle layer, and the noble metal nanoparticle layer is disposed on the sensing substrate and has noble metal nanoparticles with diameter of 2˜12 nm. An analyte adsorbed on the surface of the noble metal nanoparticle layer generates a dielectric environmental change, resulting in a change of the LPR band. Comparing noble metal nanoparticles with different particle diameters, small noble metal nanoparticles provide better sensing sensitivity to a compound with a small molecular weight.

    摘要翻译: 本发明公开了一种LPR感测装置和LPR感测系统,其包括LPR感测装置,光源,检测单元和处理单元。 LPR感测装置包括感测基板和贵金属纳米颗粒层,并且贵金属纳米颗粒层设置在感测基板上并具有直径为2〜12nm的贵金属纳米粒子。 吸附在贵金属纳米颗粒层表面上的分析物产生电介质环境变化,导致LPR带的变化。 比较不同粒径的贵金属纳米粒子,小型贵金属纳米粒子对具有小分子量的化合物提供更好的感测灵敏度。

    Implanting Method for Forming Photodiode
    6.
    发明申请
    Implanting Method for Forming Photodiode 有权
    用于形成光电二极管的植入方法

    公开(公告)号:US20130230941A1

    公开(公告)日:2013-09-05

    申请号:US13410165

    申请日:2012-03-01

    IPC分类号: H01L31/18

    摘要: An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

    摘要翻译: 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底,在衬底上生长外延层,从衬底的前侧在外延层中注入具有第二导电性的离子,并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法,光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。