公开(公告)号：US20210320004A1

公开(公告)日：2021-10-14

申请号：US17291605

申请日：2019-10-08

Applicant: Lam Research Corporation

Inventor： Pramod Subramonium ,  Nagraj Shankar ,  Malay Milan Samantaray ,  Katsunori Yoshizawa ,  Bart J. VanSchravendijk

IPC: H01L21/02 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/311

Abstract: A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

公开(公告)号：US12040180B2

公开(公告)日：2024-07-16

申请号：US17291605

申请日：2019-10-08

Applicant: Lam Research Corporation

Inventor： Pramod Subramonium ,  Nagraj Shankar ,  Malay Milan Samantaray ,  Katsunori Yoshizawa ,  Bart J. VanSchravendijk

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/76802 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.