公开(公告)号：US20210320004A1

公开(公告)日：2021-10-14

申请号：US17291605

申请日：2019-10-08

申请人： Lam Research Corporation

发明人： Pramod Subramonium ,  Nagraj Shankar ,  Malay Milan Samantaray ,  Katsunori Yoshizawa ,  Bart J. VanSchravendijk

IPC分类号： H01L21/02 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/311

摘要： A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

公开(公告)号：US12087572B2

公开(公告)日：2024-09-10

申请号：US17598830

申请日：2020-03-26

申请人： Lam Research Corporation

发明人： Bart J. van Schravendijk ,  Soumana Hamma ,  Kai-Lin Ou ,  Ming Li ,  Malay Milan Samantaray

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L27/088 ,  H01L27/1157 ,  H10B43/20 ,  H10B43/35

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31111 ,  H01L27/088 ,  H10B43/20 ,  H10B43/35

摘要： Disclosed are methods for the formation of silicon nitride (SiN) on only the horizontal surfaces of structures such as 3D NAND staircase. This allows for thicker landing pads for subsequently formed vias. In some embodiments, the methods involve deposition of a SiN layer over a staircase followed by a treatment to selectively densify the SiN layer on the horizontal surfaces with respect to the sidewall surfaces. A wet etch is then performed to remove SiN from the sidewall surfaces. The selective treatment results in significantly different wet etch rates (WERs) between the horizontal surfaces and the sidewalls.

公开(公告)号：US12040180B2

公开(公告)日：2024-07-16

申请号：US17291605

申请日：2019-10-08

申请人： Lam Research Corporation

发明人： Pramod Subramonium ,  Nagraj Shankar ,  Malay Milan Samantaray ,  Katsunori Yoshizawa ,  Bart J. VanSchravendijk

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/76802 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

摘要： A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

公开(公告)号：US20220181141A1

公开(公告)日：2022-06-09

申请号：US17598830

申请日：2020-03-26

申请人： Lam Research Corporation

发明人： Bart J. van Schravendijk ,  Soumana Hamma ,  Kai-Lin Ou ,  Ming Li ,  Malay Milan Samantaray

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L27/11578 ,  H01L27/1157

摘要： Disclosed are methods for the formation of silicon nitride (SiN) on only the horizontal surfaces of structures such as 3D NAND staircase. This allows for thicker landing pads for subsequently formed vias. In some embodiments, the methods involve deposition of a SiN layer over a staircase followed by a treatment to selectively densify the SiN layer on the horizontal surfaces with respect to the sidewall surfaces. A wet etch is then performed to remove SiN from the sidewall surfaces. The selective treatment results in significantly different wet etch rates (WERs) between the horizontal surfaces and the sidewalls.