公开(公告)号：US20230223292A1

公开(公告)日：2023-07-13

申请号：US18009254

申请日：2021-06-10

Applicant: Lam Research Corporation

Inventor： Lai Wei ,  Ji Soo Kim ,  Alan Jeffrey Miller ,  William Thie ,  Frank Yun Lin ,  Jun Hee Hee Han ,  Jie Liu ,  Conan Chiang ,  Michael John Martin

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/68721 ,  H01L21/68735 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/3065 ,  H01J2237/334

Abstract: In some examples, a flat Bottom Shadow Ring (fBSR) is provided for processing a substrate in a processing chamber. An example fBSR comprises an overhang for covering an edge of the substrate in the processing chamber. The overhang includes a fiat zone that extends radially outward over the outer edge of the substrate.

公开(公告)号：US09384979B2

公开(公告)日：2016-07-05

申请号：US13631414

申请日：2012-09-28

Applicant: Lam Research Corporation

Inventor： Dae-Han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0338 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834

Abstract: A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.