公开(公告)号：US20240255850A1

公开(公告)日：2024-08-01

申请号：US18628111

申请日：2024-04-05

Applicant: Lam Research Corporation

Inventor： Samantha S.H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  C23C16/04 ,  G03F1/22 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/094 ,  C23C16/047 ,  G03F1/22 ,  G03F7/091 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/70033 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/0332

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US20220344136A1

公开(公告)日：2022-10-27

申请号：US17596651

申请日：2020-06-25

Applicant: Lam Research Corporation

Inventor： Daniel Peter ,  Da Li ,  Timothy William Weidman ,  Boris Volosskiy ,  Chenghao Wu ,  Katie Lynn Nardi ,  Kevin Li Gu ,  Leon Taleh ,  Samantha SiamHwa Tan ,  Jengyi Yu ,  Meng Xue

IPC: H01J37/32 ,  G03F7/16 ,  G03F7/20

Abstract: A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.

公开(公告)号：US20240429045A1

公开(公告)日：2024-12-26

申请号：US18757184

申请日：2024-06-27

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S.H. Tan ,  Liu Yang ,  Chen-Wei Liang ,  Boris Volosskiy ,  Richard Wise ,  Yang Pan ,  Da Li ,  Ge Yuan ,  Andrew Liang

IPC: H01L21/02

Abstract: Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.

公开(公告)号：US12062538B2

公开(公告)日：2024-08-13

申请号：US17594744

申请日：2020-04-14

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S. H. Tan ,  Liu Yang ,  Chen-Wei Liang ,  Boris Volosskiy ,  Richard Wise ,  Yang Pan ,  Da Li ,  Ge Yuan ,  Andrew Liang

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

Abstract: Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.

公开(公告)号：US11988965B2

公开(公告)日：2024-05-21

申请号：US17452365

申请日：2021-10-26

Applicant: Lam Research Corporation

Inventor： Samantha S. H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  C23C16/04 ,  G03F1/22 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/094 ,  C23C16/047 ,  G03F1/22 ,  G03F7/091 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/70033 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/0332

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US20220035247A1

公开(公告)日：2022-02-03

申请号：US17310635

申请日：2021-01-11

Applicant: Lam Research Corporation

Inventor： Samantha S.H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  C23C16/04

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US20240192590A1

公开(公告)日：2024-06-13

申请号：US17905754

申请日：2021-03-24

Applicant: Lam Research Corporation

Inventor： Sivananda Krishnan Kanakasabapathy ,  Samantha S.H. Tan ,  Jengyi Yu ,  Younghee Lee ,  Alan J. Jensen ,  Da Li

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274

Abstract: The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.

公开(公告)号：US20230031955A1

公开(公告)日：2023-02-02

申请号：US17758567

申请日：2021-01-29

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Da Li ,  Samantha S.H. Tan ,  Younghee Lee

IPC: G03F7/16 ,  H01L21/027 ,  G03F7/38

Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. For instance, the techniques herein may involve providing a substrate in a process chamber, where the substrate includes a photoresist layer over a substrate layer, and where the photoresist includes metal, and treating the photoresist to modify material properties of the photoresist such that etch selectivity in a subsequent post-exposure dry development process is increased. In various embodiments, the treatment may involve exposing the substrate to elevated temperatures and/or to a remote plasma. One or more process conditions such as temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture may be controlled during treatment to tune the material properties as desired.

公开(公告)号：US20240329538A1

公开(公告)日：2024-10-03

申请号：US18700238

申请日：2023-06-29

Applicant: Lam Research Corporation

Inventor： Da Li ,  Ji Yeon Kim ,  Samantha S.H. Tan ,  Timothy William Weidman

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/16 ,  G03F7/42

CPC classification number: G03F7/36 ,  G03F7/0043 ,  G03F7/168 ,  G03F7/422

Abstract: Provided are processes for development of photopatterned metal or metal oxide-based thin film photoresists post-EUV exposure for removal of non-volatile species and deterring etch stop. Repeated cycles of alternating treatment with an etchant and an oxidizing agent; or treatment with an etchant followed by treatment with a wash agent are effective techniques for removal of the undesired unexposed portion of a photoresist.

公开(公告)号：US12105422B2

公开(公告)日：2024-10-01

申请号：US17596648

申请日：2020-06-25

Applicant: Lam Research Corporation

Inventor： Samantha Siamhwa Tan ,  Jengyi Yu ,  Da Li ,  Yiwen Fan ,  Yang Pan ,  Jeffrey Marks ,  Richard A. Gottscho ,  Daniel Peter ,  Timothy William Weidman ,  Boris Volosskiy ,  Wenbing Yang

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/16 ,  G03F7/40

CPC classification number: G03F7/167 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/168 ,  G03F7/36 ,  G03F7/40

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.