公开(公告)号：US12278125B2

公开(公告)日：2025-04-15

申请号：US18377267

申请日：2023-10-05

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S. H. Tan ,  Mohammed Haroon Alvi ,  Richard Wise ,  Yang Pan ,  Richard Alan Gottscho ,  Adrien Lavoie ,  Sivananda Krishnan Kanakasabapathy ,  Timothy William Weidman ,  Qinghuang Lin ,  Jerome S. Hubacek

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/36 ,  G03F7/38 ,  H01L21/67

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：US20240192590A1

公开(公告)日：2024-06-13

申请号：US17905754

申请日：2021-03-24

Applicant: Lam Research Corporation

Inventor： Sivananda Krishnan Kanakasabapathy ,  Samantha S.H. Tan ,  Jengyi Yu ,  Younghee Lee ,  Alan J. Jensen ,  Da Li

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274

Abstract: The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.

公开(公告)号：US11355353B2

公开(公告)日：2022-06-07

申请号：US16260764

申请日：2019-01-29

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha SiamHwa Tan ,  Seongjun Heo ,  Boris Volosskiy ,  Sivananda Krishnan Kanakasabapathy ,  Richard Wise ,  Yang Pan ,  Hui-Jung Wu

IPC: H01L21/3213 ,  H01L21/67 ,  C04B41/91 ,  C04B41/53 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/02 ,  H01L21/311 ,  H01L21/465 ,  H01L21/467 ,  H01L21/033

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

公开(公告)号：US12183589B2

公开(公告)日：2024-12-31

申请号：US17302847

申请日：2021-05-13

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S. H. Tan ,  Seongjun Heo ,  Boris Volosskiy ,  Sivananda Krishnan Kanakasabapathy ,  Richard Wise ,  Yang Pan ,  Hui-Jung Wu

IPC: H01L21/3213 ,  C04B41/53 ,  C04B41/91 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/465 ,  H01L21/467 ,  H01L21/67

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

公开(公告)号：US20230314946A1

公开(公告)日：2023-10-05

申请号：US18005595

申请日：2021-07-16

Applicant: Lam Research Corporation

Inventor： Eric Calvin Hansen ,  Timothy William Weidman ,  Chenghao Wu ,  Qinghuang Lin ,  Kyle Jordan Blakeney ,  Adrien LaVoie ,  Sivananda Krishnan Kanakasabapathy ,  Samantha S.H. Tan ,  Richard Wise ,  Yang Pan ,  Younghee Lee ,  Katie Lynn Nardi ,  Kevin Li Gu ,  Boris Volosskiy

IPC: G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  G03F7/095 ,  G03F7/16 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0043 ,  G03F7/095 ,  G03F7/11 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274

Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.

公开(公告)号：US20230290657A1

公开(公告)日：2023-09-14

申请号：US18184545

申请日：2023-03-15

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S.H. Tan ,  Mohammed Haroon Alvi ,  Richard Wise ,  Yang Pan ,  Richard Alan Gottscho ,  Adrien LaVoie ,  Sivananda Krishnan Kanakasabapathy ,  Timothy William Weidman ,  Qinghuang Lin ,  Jerome S. Hubacek

IPC: H01L21/67 ,  G03F7/38 ,  G03F7/16 ,  G03F7/004 ,  G03F7/36

CPC classification number: H01L21/67225 ,  G03F7/38 ,  H01L21/67167 ,  G03F7/167 ,  G03F7/0042 ,  G03F7/36

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：US20230152701A1

公开(公告)日：2023-05-18

申请号：US17905632

申请日：2021-03-22

Applicant: Lam Research Corporation

Inventor： Sivananda Krishnan Kanakasabapathy

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/004 ,  G03F7/38 ,  G03F7/36 ,  G03F7/40 ,  H01L21/027 ,  C23C16/54 ,  C23C16/455 ,  C23C16/50 ,  C23C16/18

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/0042 ,  G03F7/38 ,  G03F7/36 ,  G03F7/40 ,  H01L21/0274 ,  C23C16/54 ,  C23C16/45525 ,  C23C16/50 ,  C23C16/18 ,  G03F7/168

Abstract: The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.

公开(公告)号：US20250087498A1

公开(公告)日：2025-03-13

申请号：US18957283

申请日：2024-11-22

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S.H. Tan ,  Seongjun Heo ,  Boris Volosskiy ,  Sivananda Krishnan Kanakasabapathy ,  Richard Wise ,  Yang Pan ,  Hui-Jung Wu

IPC: H01L21/3213 ,  C04B41/53 ,  C04B41/91 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/465 ,  H01L21/467 ,  H01L21/67

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

公开(公告)号：US20250068065A1

公开(公告)日：2025-02-27

申请号：US18727056

申请日：2023-01-09

Applicant: Lam Research Corporation

Inventor： Sivananda Krishnan Kanakasabapathy ,  Kevin M. McLaughlin ,  Jialing Yang ,  Arpan Pravin Mahorowala ,  Durgalakshmi Singhal

IPC: G03F7/004 ,  G03F7/09

Abstract: This disclosure relates generally to a patterning structure (and methods and apparatus for forming such structures) including substrate having a partially fabricated semiconductor device film stack, a radiation-sensitive imaging layer over the substrate, an underlayer below the radiation-sensitive imaging layer, the underlayer including a labile species, a hardmask positioned below the underlayer, and a diffusion barrier layer positioned between the underlayer and the hardmask layer, the diffusion barrier layer including a diffusion barrier material that reduces diffusion of the labile species from the underlayer into the hardmask layer. In various embodiments, the reduction of diffusion of the labile species downwards from the underlayer into the hardmask results in relatively greater diffusion of the labile species upwards from the underlayer into the radiation-sensitive imaging layer. This increased diffusion into the radiation-sensitive imaging layer may advantageously increase radiation absorptivity and/or patterning performance of the radiation-sensitive imaging layer.

公开(公告)号：US20230045336A1

公开(公告)日：2023-02-09

申请号：US17758125

申请日：2021-07-02

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S.H. Tan ,  Mohammed Haroon Alvi ,  Richard Wise ,  Yang Pan ,  Richard Alan Gottscho ,  Adrien LaVoie ,  Sivananda Krishnan Kanakasabapathy ,  Timothy William Weidman ,  Qinghuang Lin ,  Jerome S. Hubacek

IPC: H01L21/67 ,  G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  G03F7/36

Abstract: Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.