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公开(公告)号：US20220162755A1
公开(公告)日：2022-05-26
申请号：US17644761
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20220162754A1
公开(公告)日：2022-05-26
申请号：US17644760
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US11441222B2
公开(公告)日：2022-09-13
申请号：US17644759
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： H01L21/68 , C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20220162753A1
公开(公告)日：2022-05-26
申请号：US17644759
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20190062918A1
公开(公告)日：2019-02-28
申请号：US15692300
申请日：2017-08-31
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/67 , H01L21/687 , H01L21/02 , C23C16/505 , C23C16/52
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20240309507A1
公开(公告)日：2024-09-19
申请号：US18612809
申请日：2024-03-21
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , C23C16/04 , C23C16/505 , C23C16/52 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： C23C16/45574 , C23C16/04 , C23C16/45519 , C23C16/45565 , C23C16/45597 , C23C16/505 , C23C16/52 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0262 , H01L21/67017 , H01L21/68735 , H01L21/68771 , H01L21/68785 , H01L21/02532 , H01L21/02595 , H01L21/67161
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US11851760B2
公开(公告)日：2023-12-26
申请号：US17644760
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： H01L21/687 , C23C16/455 , H01L21/02 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
CPC分类号： C23C16/45574 , C23C16/04 , C23C16/45519 , C23C16/45565 , C23C16/45597 , C23C16/505 , C23C16/52 , H01L21/0217 , H01L21/0262 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/67017 , H01L21/68735 , H01L21/68771 , H01L21/68785 , H01L21/02532 , H01L21/02595 , H01L21/67161
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US11725283B2
公开(公告)日：2023-08-15
申请号：US17644761
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： H01L21/687 , C23C16/455 , H01L21/02 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
CPC分类号： C23C16/45574 , C23C16/04 , C23C16/45519 , C23C16/45565 , C23C16/45597 , C23C16/505 , C23C16/52 , H01L21/0217 , H01L21/0262 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/67017 , H01L21/68735 , H01L21/68771 , H01L21/68785 , H01L21/02532 , H01L21/02595 , H01L21/67161
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20210108314A1
公开(公告)日：2021-04-15
申请号：US17080749
申请日：2020-10-26
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A method for processing a substrate in a plasma processing system having a showerhead and a shower-pedestal oriented below the showerhead is provided. The method includes supporting the substrate between the showerhead and the shower-pedestal. The substrate is supported to be spaced apart from the shower-pedestal and the shower head. The method includes flowing a process gas out of the shower-pedestal in a direction that is toward a backside of the substrate, and flowing an inert gas out of the showerhead in a direction that is toward a topside of the substrate. The method includes generating a plasma, using the process gas, between the shower-pedestal and the backside of the substrate. The plasma is configured to deposit a film on said backside of the substrate and the inert gas is configured to prevent or reduce deposition on said topside of the substrate.
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公开(公告)号：US10851457B2
公开(公告)日：2020-12-01
申请号：US15692300
申请日：2017-08-31
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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