公开(公告)号：US20110108989A1

公开(公告)日：2011-05-12

申请号：US12616259

申请日：2009-11-11

申请人： Lawerence A. Clevenger ,  Maxime Darnon ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawerence A. Clevenger ,  Maxime Darnon ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31144 ,  H01L21/7682

摘要： A process to produce an airgap on a substrate having a dielectric layer comprises defining lines by lithography where airgaps are required. The lines' dimensions are shrunk by a trimming process (isotropic etching). The tone of the patterns is reversed by applying a planarizing layer which is etched down to the top of the patterns. The photoresist is removed, leading to sub-lithographic trenches which are transferred into a cap layer and eventually into the dielectric between two metal lines. The exposed dielectric is eventually damaged, and is etched out, leading to airgaps between metal lines. The gap is sealed by the pinch-off occurring during the deposition of the subsequent dielectric.

摘要翻译： 在具有电介质层的基板上产生气隙的方法包括通过需要气隙的光刻来定义线。 线的尺寸通过修整工艺（各向同性蚀刻）收缩。 图案的色调通过施加被向下蚀刻到图案的顶部的平坦化层来反转。 去除光致抗蚀剂，导致亚光刻沟槽，其转移到盖层中，最终转移到两条金属线之间的电介质中。 暴露的电介质最终被损坏，并被蚀刻掉，导致金属线之间的气隙。 间隙通过在随后的电介质的沉积期间发生的夹断来密封。

公开(公告)号：US20110221062A1

公开(公告)日：2011-09-15

申请号：US12721032

申请日：2010-03-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08896120B2

公开(公告)日：2014-11-25

申请号：US12768267

申请日：2010-04-27

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/02 ,  H01L21/31 ,  H01L21/027 ,  H01L23/522

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地，本文所述的方法提供了内置于可光图案化的低k材料中的互连结构，其中不同深度的气隙通过光刻图案中的低k材料中的光刻来定义。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20110260326A1

公开(公告)日：2011-10-27

申请号：US12768267

申请日：2010-04-27

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地，本文所述的方法提供了内置于可光图案化的低k材料中的互连结构，其中不同深度的气隙通过光刻图案中的低k材料中的光刻来定义。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08629561B2

公开(公告)日：2014-01-14

申请号：US13540931

申请日：2012-07-03

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/70

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08241992B2

公开(公告)日：2012-08-14

申请号：US12776885

申请日：2010-05-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08642252B2

公开(公告)日：2014-02-04

申请号：US12721032

申请日：2010-03-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC分类号： H01L21/764

CPC分类号： H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20120280398A1

公开(公告)日：2012-11-08

申请号：US13540931

申请日：2012-07-03

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/522

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20110272810A1

公开(公告)日：2011-11-10

申请号：US12776885

申请日：2010-05-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/522 ,  G03F7/20

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20090200636A1

公开(公告)日：2009-08-13

申请号：US12029800

申请日：2008-02-12

申请人： Daniel C. Edelstein ,  Nicholas C. M. Fuller ,  David V. Horak ,  Elbert E. Huang ,  Wai-Kin Li ,  Anthony D. Lisi ,  Satyanarayana V. Nitta ,  Shom Ponoth

发明人： Daniel C. Edelstein ,  Nicholas C. M. Fuller ,  David V. Horak ,  Elbert E. Huang ,  Wai-Kin Li ,  Anthony D. Lisi ,  Satyanarayana V. Nitta ,  Shom Ponoth

IPC分类号： H01L23/00 ,  H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

摘要： Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.

摘要翻译： 公开了亚光刻尺寸气隙形成和相关结构。 在一个实施例中，一种方法包括在衬底上形成包括互连的介质层; 在电介质层上沉积盖层; 在所述盖层上沉积光致抗蚀剂; 图案化光致抗蚀剂以包括最多部分地覆盖互连的第一沟槽图案; 在所述第一沟槽图案内形成间隔物以形成具有亚光刻尺寸的第二沟槽图案; 将所述第二沟槽图案转移到所述覆盖层中并进入所述互连之间的所述介电层; 并且通过夹住介电层中的沟槽而沉积另一介质层以形成气隙。