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公开(公告)号：US5215939A
公开(公告)日：1993-06-01
申请号：US832024
申请日：1992-02-06
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , Y10S148/09 , Y10S148/10
摘要： In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.
摘要翻译： 在制造平面埋入异质结激光器的方法中，在蚀刻以限定基板上的激光条纹之后，不仅在条纹侧面而且在上方都通过非选择性生长方法形成围绕条纹的横向层 它创建一个寄生投影。 然后通过选择性地攻击在该蚀刻之前在条纹上方沉积的剥离条纹从衬底分离之后，去除该突起。 形成用于此目的的攻击介质的通道。 本发明可以特别应用于光纤传输系统的制造。
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2.发明授权Method of manufacturing a semiconductor component, in particular a buried ridge laser 失效制造半导体元件的方法，特别是掩埋脊形激光器
公开(公告)号：US5486489A
公开(公告)日：1996-01-23
申请号：US191165
申请日：1994-02-03
申请人： Leon Goldstein , Dominique Bonnevie
发明人： Leon Goldstein , Dominique Bonnevie
CPC分类号： H01L33/0062 , H01S5/305 , Y10S148/095
摘要： In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superdoped layer (24) is deposited, which superdoped layer has a dopant concentration that is greater than twice the mean concentration of the coating. The invention applies in particular to manufacturing a semiconductor laser for an optical fiber telecommunications system.
摘要翻译： 在该方法中，掺杂半导体涂层将沉积在掺杂有与涂层相同导电类型的掺杂剂的半导体基底（9）的干扰表面（S）上。 根据本发明，在沉积涂层（10）的主层（28）之前，沉积超掺杂层（24），超掺杂层的掺杂剂浓度大于涂层平均浓度的两倍。 本发明特别适用于制造用于光纤通信系统的半导体激光器。
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公开(公告)号：US5278858A
公开(公告)日：1994-01-11
申请号：US915512
申请日：1992-07-20
CPC分类号： H01S5/227 , H01S5/2277
摘要： The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.
摘要翻译： 磷化铟或砷化镓双通道半导体激光器的通电电流通过近，远电流的阻挡装置被限制在激光条纹内。 近电流阻塞装置由形成在限定条纹的两个横向通道中的阻挡结形成。 远电流阻挡装置由在横向沟道被蚀刻之前外延生长的铁掺杂半绝缘层形成。 特别的应用是制造用于光纤链路光放大器的泵激光器。
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公开(公告)号：US6052398A
公开(公告)日：2000-04-18
申请号：US53704
申请日：1998-04-02
申请人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
发明人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
CPC分类号： H01S5/18305 , H01S2302/00 , H01S5/18308 , H01S5/18394 , H01S5/3095
摘要： Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
摘要翻译： 激光器的两个半导体层形成隧道结，能够使电流泵浦激光从N掺杂半导体布拉格反射镜传递到属于光放大结构的P掺杂注入层。 布拉格反射镜与具有相同掺杂的相同类型的另一个反射镜配合，以在激光器的光腔中包括所述结构。 在一个变型中，隧道结可以被埋置和定位，以便构成用于所述泵送电流的约束装置。 激光可用于光纤通信网络。
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公开(公告)号：US06310719B1
公开(公告)日：2001-10-30
申请号：US09410052
申请日：1999-10-01
IPC分类号： H01S300
CPC分类号： H01S5/5009 , H01S5/3201
摘要： The invention relates to a semi-conductor optical amplifier insensitive to the polarization of light. The active layer (20) of this amplifier is made up of an alternating series of solid sub-layers alternately under tensile stress (21) and compressive stress (22) and having the same forbidden band-width. The sub-layers under tensile stress (21) favour the propagation of the TM mode of polarization of light and the sub-layers under compression (22) favour the propagation of the TE mode of polarization of light. In addition, the thicknesses of the sub-layers have values which ensure equal gains G(TE) and G(TM) for the active layer.
摘要翻译： 本发明涉及对光的偏振不敏感的半导体光放大器。 该放大器的有源层（20）由拉伸应力（21）和压缩应力（22）交替的交替的固体子层组成，具有相同的禁带宽度。 拉伸应力下的子层（21）有利于光的TM偏振模的传播和压缩下的子层（22）有利于光的TE偏振模的传播。 此外，子层的厚度具有确保有源层的相等增益G（TE）和G（TM）的值。
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公开(公告)号：US5321260A
公开(公告)日：1994-06-14
申请号：US922478
申请日：1992-07-31
IPC分类号： C30B23/06 , C30B23/08 , H01L21/203 , H05H3/02
CPC分类号： C30B23/066
摘要： Primary molecules are formed by sublimation in a sublimation chamber (2), they are then transferred at a transfer flow-rate to a decomposition head (10) at a higher temperature, and they are transformed therein into secondary molecules that are lighter in weight to form molecular beams (16). In accordance with the invention, the transfer flow-rate is adjusted by adjusting an effective vector flow-rate which is the vector flow-rate of a vector gas inserted into the sublimation chamber via a feed tube (26) and sucked out via a suction tube (30). The invention applies, in particular, to making III-V type semiconductor components by molecular beam epitaxy.
摘要翻译： 通过在升华室（2）中升华形成初级分子，然后以更高的温度将其以转移流速转移到分解头（10），并将它们转化成重量比较轻的二级分子 形成分子束（16）。 根据本发明，通过调节作为通过供给管（26）插入升华室的向量气体的向量流量的有效矢量流量来调节转印流量，并通过抽吸 管（30）。 本发明特别适用于通过分子束外延制造III-V型半导体元件。
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公开(公告)号：US4607152A
公开(公告)日：1986-08-19
申请号：US634434
申请日：1984-07-26
申请人： Michel Allovon , Leon Goldstein
发明人： Michel Allovon , Leon Goldstein
IPC分类号： C23C14/24 , C23C14/56 , C23C14/26 , H01L21/203 , H05B3/06
摘要： A vacuum evaporation device incorporates a main treatment enclosure connected to an auxiliary chamber containing a material evaporation cell. The cell is fixed to a tight bellows displacement member able to displace the cell between a first advanced position towards a main enclosure and a second retracted position. A sealing valve provided with a slide is provided for the main enclosure from the auxiliary chamber, whereby the material of the evaporation cell can thus be changed without placing the main enclosure under atmosphere again. A fixed heating tube, connecting the main enclosure to the auxiliary chamber, has a first end engaged in the main enclosure and a second end issuing into the auxiliary chamber. The second end is provided with an end piece made from a thermally insulating material ensuring mechanical continuity and thermal insulation with the support part and able to bearingly receive the evaporation cell when the latter is in the advanced position. The slide of the sealing valve is inserted between the end piece and the evaporation cell when the latter is in the retracted position, the travel of the cell between these end positions and consequently travel of the bellows being limited to the space necessary for closing the valve.
摘要翻译： 真空蒸发装置包括连接到包含材料蒸发单元的辅助室的主处理外壳。 电池被固定到能够在朝向主外壳的第一前进位置和第二缩回位置之间移动电池的紧密波纹管移位构件。 从辅助室为主壳体提供了设有滑动件的密封阀，由此可以改变蒸发单元的材料，而不会再将主机壳放置在大气层下。 将主外壳连接到辅助室的固定加热管具有接合在主外壳中的第一端和发送到辅助室中的第二端。 第二端设置有由绝热材料制成的端部件，其确保与支撑部件的机械连续性和热绝缘性，并且能够在后者位于前进位置时轴承地接纳蒸发单元。 密封阀的滑动件在后端处于缩回位置时插入在端件和蒸发单元之间，因此在这些端部位置之间的单元行程和波纹管的行程被限制到关闭阀门所需的空间 。
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公开(公告)号：US06441969B1
公开(公告)日：2002-08-27
申请号：US09442614
申请日：1999-11-18
申请人： Leon Goldstein , Arthur Dorf
发明人： Leon Goldstein , Arthur Dorf
IPC分类号： G02B1700
CPC分类号： G02B17/08 , A45D42/00 , A45D42/02 , A45D42/10 , F21V33/004 , G02B17/0856
摘要： A common corrective eyeglass lens blank and a common mirror, Plano or magnifying, are brought together in a “compact” (small sized) construction and assembly to provide the very thing long desired in mirrors and not elsewhere found—corrected vision and ample working room between the eyes and any lenses, at the same time, at reasonable cost, in an elegance of implementation.
摘要翻译： 常见的矫正眼镜镜片坯料和普通镜子或普通镜子以“紧凑型”（小尺寸）结构和组件结合在一起，以提供镜子中长期需要的东西，而不在其他地方找到矫正视力和充足的工作室 在眼睛和任何镜头之间，同时，以合理的成本，优雅的实施。
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公开(公告)号：US6005708A
公开(公告)日：1999-12-21
申请号：US57512
申请日：1998-04-09
申请人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
发明人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
CPC分类号： H04B10/2914 , G02F2/004 , G02F2001/212 , G02F2001/215 , G02F2002/006
摘要： The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.
摘要翻译： 本发明涉及用于光通信中的光信号的波长转换器，特别是用于路由信号。 本发明具体涉及包括用于传送输出光信号的干涉仪结构的波长转换器，其中包括至少一个第一半导体光放大器的转换器第一和第二分支耦合到输入外围半导体光放大器和/或 输出外围半导体光放大器，其中至少一个外围放大器的有源波导的结构被设计成使得其有效面积与约束因子的比率大于所述第一放大器的有源波导的比率。
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10.发明授权Method of shifting a wavelength in a semiconductor structure having quantum wells 失效在具有量子阱的半导体结构中偏移波长的方法
公开(公告)号：US5707890A
公开(公告)日：1998-01-13
申请号：US409581
申请日：1995-03-24
申请人： Jean-Yves Emery , Leon Goldstein
发明人： Jean-Yves Emery , Leon Goldstein
IPC分类号： G02F2/02 , H01L29/06 , H01L29/66 , H01S3/10 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20 , H01S5/34 , H01L21/225
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/2059 , H01S5/3413
摘要： From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.
摘要翻译： 从III-V型半导体结构的顶面，在井之间的元件和内部量子结构的势垒之间的相互扩散是热诱导的。 互扩散仅在结构的一个部分中执行，即其中特征波长被移位以便构成振幅调制器的部分，该结构的另一个部分包括布拉格光栅，以便构成激光发射器 。 根据本发明，通过电介质封装层与保持与顶面接触的铟层引起相互扩散。 本发明特别适用于光通信。
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